What is the difference between MOSFET and IGB

　　MOS transistor is MOSFET, Chinese full name metal oxide semiconductor field effect transistor, known as gold oxygen half effect transistor is a kind of field effect transistor can be widely used in analog circuits and digital circuits. Because the gate of the FET is isolated by an insulating layer, it is also called an insulating gate FET. Mosfets can be divided into N channel depletion type and enhanced type. There are four major types of P-channel depletion and enhanced. Next, Ameya360 electronic components purchase network will introduce to you!

　　IGBT is an insulated gate bipolar transistor. It is a compound fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate FETs). It combines the advantages of high input impedance of MOSFET and low on-voltage drop of GTR. The saturation voltage of GTR decreases, the current carrying density is high, but the driving current is high. MOSFET has low driving power and fast switching speed, but large conduction voltage drop and low current carrying density. Igbts combine the advantages of both devices, with lower driving power and reduced saturation voltage. It is very suitable for converter system with DC voltage of 600V and above, such as AC motor, frequency converter, switching power supply, lighting circuit, traction drive and other fields.

　　There are many types of MOSFeTs, but the most comparable to IGBTs are power MosFeTs. It is designed to handle significant power levels. They are only used in the "on" or "off" state, making them the most widely used low-voltage switch. Compared to IGBTs, power mosFeTs have faster reversing speed and higher efficiency when operating at low voltages.

　　What's more, it can maintain high blocking voltage and high current. This is because most power MOSFET structures are vertical (not planar). Its rated voltage is a direct function of the doping and thickness of the N-epitaxial layer, and its rated current is related to the channel width (the wider the channel, the higher the current). Because of their efficiency, power MosFeTs are used in power supplies, DC/DC converters, and low voltage motor controllers.

　　MOSFET and IGBT insulated gate double maximum power tubes and other devices have an insulated silicon structure between the source and gate, and DC current cannot pass through, so the low-frequency behavior drive power is close to zero. However, the grid capacitor Cgs are formed between the grid and the source, so some dynamic drive power is required when the high frequencies are alternately switched on and need to be switched off.

　　Due to the large gate capacitance Cgs, low power mosFETs typically have Cgs between 10-100pF for high power insulated gate power devices. Usually between 1-100nF, large dynamic drive power is required. In addition, grid drive power is generally not negligible due to the drain-to-grid Miller capacitor Cdg. Due to the current trailing effect of IGBTs, better immunity is required during downtime and negative voltage drive is required. Mosfets are fast and can be turned off without negative voltage, but when interference is severe, negative voltage off is very good for improving reliability.

　　MOSFET is used in switching power supply, ballast, high frequency induction heating, high frequency inverter welding machine, communication power supply and other high frequency power supply, IGBT focuses on welding, inverter, inverter, electroplating power supply, super audio induction heating and other fields.