AMEYA360:ROHM Semiconductor 4th Generation N-Channel SiC Power MOSFETs

发布时间：2023-03-17 11:59
作者：AMEYA360
来源：网络
阅读量：1533

　　ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

AMEYA360:ROHM Semiconductor 4th Generation N-Channel SiC Power MOSFETs

　　FEATURES

　　Low on-resistance with improving short-circuit ruggedness

　　Minimizes switching loss by drastically reducing parasitic capacitance

　　Supports 15V Gate-Source voltage, improving application design freedom

　　Fast switching speed

　　Fast reverse recovery

　　Easy to parallel

　　Simple to drive

　　Silicon Carbide (SiC) technology

　　N-Channel transistor polarity

　　Single-channel

　　Through-hole mounting

　　Enhancement mode

　　+175°C maximum operating temperature

　　AEC-Q101-qualified options available

　　Lead-free, RoHS and REACH compliant

　　APPLICATIONS

　　Automobile

　　Switch mode power supplies

　　Solar inverters

　　DC/DC converters

　　Induction heating

　　Motor drives

　　SPECIFICATIONS

　　3 to 7 pins

　　-4V to +21V gate-source voltage range, 4.8V threshold

　　63nC to 170nC gate-charge range

　　26A to 105A continuous drain current range

　　13mΩ to 62mΩ on-drain source resistance

　　750V or 1.2kV Drain-source breakdown voltage

　　11ns to 57ns rise time

　　9.6ns to 21ns fall time

　　Typical delay time

　　4.4ns to 20ns turn-on range

　　22ns to 83ns turn-off range

　　93W to 312W power dissipation range

　　Available packages

　　TO-247-4L

　　TO-247N-3

　　TO-263-7L


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