<span style='color:red'>Murata</span>：Commercialized polymer aluminum electrolytic capacitors that have achieved low ESR 4.5 mΩ with a thin design and high capacitance
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Murata：Commercialized polymer aluminum electrolytic capacitors that have achieved low ESR 4.5 mΩ with a thin design and high capacitance

　　Key features　　Achieved low ESR 4.5 mΩ with a thin design and high capacitance　　A low ESR product with high output noise level reduction effects　　Contributes to stable power supply for CPU, GPU, and FPGA of data centers and accelerators that require high currents　　Key applications: Server, accelerator, laptop PC　　Request a free sample on the “my Murata” registered members-only portal website　　Murata Manufacturing Co., Ltd. (hereinafter “Murata”) has developed the “ECASD40E477M4R5KA0” (hereinafter “this product”) polymer aluminum electrolytic smoothing capacitor that achieves low ESR (4.5 mΩ) while maintaining a thin design (2.0 mm Max) and large capacitance (470 μF) in a D case (7.3 x 4.3 mm), equivalent to conventional products*1. Mass production has already begun, and samples can also be provided.　　*1ECASD40E477M006KA0 (470uF/2.5V/6mΩ)　　In recent years, IT devices such as servers and accelerators used in data centers are being created to support larger currents. Since IC voltage fluctuation and heat generation are major issues that must be tackled to achieve stable device operation, it is necessary to both increase the capacitance of the capacitors used to suppress voltage fluctuations and to mount large, high-performance heat sinks (cooling units) on the ICs. Murata has proposed component costs reduction through problem solving using conventional low-profile and high-capacitance products as well as by reducing the number of components used.　　However, there is a growing demand for lower ESR products as a response to noise amplification due to the application of larger currents. Murata has now developed this product with a ESR value improved by 25% while maintaining the height and high-capacitance of conventional products. With this product, Murata contributes to providing stable device power supply while suppressing mounting areas and costs of electronic components.　　Specifications
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Release time：2024-06-11 15:13 reading：661 Continue reading>>
<span style='color:red'>Murata</span> Enters Licensing Agreement with Michelin to Integrate RFID Technology into Tires
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Murata Enters Licensing Agreement with Michelin to Integrate RFID Technology into Tires

　　Murata Manufacturing Co., Ltd. is pleased to announce a significant licensing agreement with Michelin, Europe’s premier automobile tire manufacturer. This agreement will allow for the integration of cutting-edge RFID (Radio Frequency Identification) tire tags into automotive tires, helping to further advance tire management, sustainability, security, and traceability until the end of life within the transportation and wider automotive industry.　　For 80 years now, Murata has been a leading company in the electronics market. With a major component for innovation and technology, Murata contributes to the improvement of society. With emerging environmental and societal challenges, Murata is investing more and more in the interconnectivity and traceability of products, giving life to the objects around us, particularly through RFID technology.　　In the future, more and more objects will be connected, in order to better trace their origins and recycling. Europe is already implementing the ESPR (Eco-design for Sustainable Products Regulation) improving the circularity of products, each of them will be issued a digital product passport (DPP) allowing their life cycle to be traced.　　This will also affect tires which must contain an RFID, an essential component to obtain a DPP. This RFID, in addition to guaranteeing compatibility with new European standards, will make it possible to improve all logistical aspects affecting the tire and automobile industry and mobility more generally.　　Michelin and Murata have enjoyed a successful working relationship for many years. This partnership has contributed to advancing RFID tag technology in tires. Thanks to this new agreement, Murata will be able to produce generation 4 RFID tire tags. Through this agreement, Murata will also have the possibility of offering the integration of RFID Tag in tires, patented by Michelin. In the future, tire manufacturers around the world will have access to this cutting-edge solution scheduled to enter mass production.　　In addition to offering innovative RFID tire tags, Murata is committed to helping tire manufacturers evaluate and implement these tags into their products. By leveraging its deep understanding of communications technologies, Murata can provide tailored solutions that improve tire traceability and management for various applications, encompassing high-performance motorsport, passenger vehicles, and networks for global transport. Additionally, to facilitate uniform adoption of RFID technology within the tire industry, Murata will continue to provide tire manufacturers with access to solutions based on Murata's RFID software, id-Bridge.　　“RFID technology is a key element, in improving the efficiency and optimization of tire operations. This RFID tag is the unique way to identify tires, from cradle to grave, in a consistent manner, thus responding to the ecological challenges of our time.　　Through this license, Murata and Michelin, hand in hand, are revolutionizing the tire industry, by allowing stakeholders to benefit from this technology, this agreement will open up new perspectives for the future of mobility.” said Laurent Couturier, RFID system designer at Michelin.　　“Michelin is one of the world’s leading tire manufacturers and this partnership will help to produce solutions capable of overcoming significant challenges that exist within the global tire market, allowing for further advancements in operation efficiency and supply chain reliability,” said Tetsuo Kawakatsu, Director of RFID Business Department at Murata.
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Release time：2024-05-23 13:50 reading：856 Continue reading>>
murata：Cutting Edge Ceramic Catalyst Material Cuts Emissions and Eliminates Precious Metal Reliance
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murata：Cutting Edge Ceramic Catalyst Material Cuts Emissions and Eliminates Precious Metal Reliance

　　Murata is pleased to announce a revolutionary ceramic catalyst material designed to reduce the impact of industrial gas exhaust systems. A Chinese manufacture (F-Tech), called Shanghai FT Technology Co., Ltd, makes and sells ceramic catalysts using this material. Unlike traditional catalysts in exhaust treatment systems, this ceramic solution does not contain any precious metals, and it significantly reduces both the consumption of the natural gas used for treatment and CO2 emissions.　　Across a wide range of industrial production processes, exhaust gasses must be treated in order to prevent harmful particulate matter from entering the atmosphere. In many applications, regenerative thermal oxidizers (RTO) are used to decompose, and therefore treat, the exhaust gas by burning it with natural gas, eliminating volatile organic compounds (VOCs), hazardous air pollutants (HAPs) and odorous emissions produced during industrial processes.　　Given the rise in natural gas prices and the urgent need to prioritize global sustainability, industrial production facilities are now more determined than ever to find ways to decrease their fuel consumption and reduce their carbon footprint.　　Built from Murata’s extensive ceramic capacitor knowledge, the catalyst exhibits exceptional heat resistance and can be used to treat highly concentrated exhaust gas. In terms of performance, by installing Murata’s ceramic catalyst into an existing exhaust gas treatment equipment the set temperature can be lowered from around 850°C to 700°C. Through the reduction in the set temperature system, heat loss is reduced and the Self-combustion rate is increased, reducing natural gas consumption by up to 53% (Figure 1).　　Figure 1 - And RTO with the ceramic catalyst can offer a significant reduction in natural gas consumption (Source: Murata)　　Additionally, this change in operational conditions results in a decrease in CO2 emissions originating from natural gas usage, contributing to a decrease in environmental impact, as well as significantly lowering running costs.　　The ceramic material also brings a number of advantages. Primarily, the initial system cost is far more predictable, free from the price fluctuations seen with precious metals. Furthermore, the performance of precious metal catalysts can become compromised when subjected to extremely high temperatures, as the active element can move and group into larger clusters. This process, referred to as sintering, reduces the number and area of active sites and deteriorates the catalyst’s performance. Alternatively, ceramic catalyst materials have active elements dispersed in their crystal structure and do not degrade even in high-temperature operation, leading to an extended lifespan compared to precious metal catalysts.　　In real-world applications at both Murata’s manufacturing and partner sites the ceramic catalyst has had a significant impact on the environmental impact of RTO systems and operating costs, with the installation at Wuxi Murata Electronics Co. achieving full system payback in just 13 months.　　“With Murata’s patented ceramic catalyst material, we have taken our extensive ceramic capacitor knowledge and applied it to another market to create a truly innovative solution,” said Koichi Kawakita, Vice President Manufacturing Group Ceramic Capacitor Business Unit. He continued, “In terms of operation, it can help factory designers and exhaust gas treatment manufacturers achieve significant reductions in natural gas consumption and carbon emissions, while also cutting dependence on precious metals.”　　Production is now underway and engineering samples are available for both the 100cpsi and 200cpsi variants.
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Release time：2024-04-15 14:05 reading：490 Continue reading>>
<span style='color:red'>Murata</span>’s Latest Partnership Aids IoT Development, Enabling M.2 Wireless Module Integration for STM32 Nucleo Boards
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Murata’s Latest Partnership Aids IoT Development, Enabling M.2 Wireless Module Integration for STM32 Nucleo Boards

　　Murata, a leading electronics manufacturer, in collaboration with Infineon are pleased to announce a new IoT development solution. This comprehensive innovation allows Murata’s Infineon-based Wi-Fi® and Bluetooth® modules to seamlessly integrate with a wide range of STM32 Nucleo-144 boards, helping to reduce the time-to-market for many wireless-enabled applications.　　The joint project is built on the collaboration with Infineon and Murata. / By combining each company’s extensive expertise, the collaboration has engineered a complete hardware and software solution that addresses a number of IoT development requirements. At its core, the platform solution allows STM32 microcontroller to connect Murata M.2 wireless modules featuring Infineon chipsets. Providing the hardware connection is Murata’s new Nucleo-144 to M.2 adapted board, while software integration is enabled through Infineon AIROC™ STM32 Expansion Pack. Whether you are evaluating low-power implementations, such as wearables and battery-powered devices, or high-performance deployments, such as industrial equipment and smart homes, this exciting solution creates a more efficient evaluation process.　　Murata Nucleo-144 to M.2 Adapter board　　Providing physical M.2 support for STMicroelectronics STM32 Nucleo board for microcontrollers, including the popular STM32U5 and STM32H5 series, is the Murata Nucleo-144 to M.2 adapter board. This innovative PCB-based adapter effortlessly mounts to the STM32 and features a convenient top-mounted M.2 socket. The M.2 dock grants effortless physical integration and swapping of Embedded Artists Murata M.2 modules which use Infineon chipsets. This allows the STM32 to accept a wide range of Wi-FiWi-Fi® and Bluetooth® combination units, including Wi-Fi 4, Wi-Fi 5 and industrial grade modules.　　AIROC™ STM32 Expansion Pack　　Produced by Infineon, a leading global semiconductor manufacturer, Infineon AIROC™ STM32 Expansion Pack provides the framework required to facilitate the Murata hardware. Using the Common Microcontroller Software Interface Standard (CMSIS), the AIROC™ STM32 Expansion Pack enables the integration of Infineon based Wi-Fi® and Bluetooth® module with STM32 STM32Cube ecosystem, including STM32CubeMX tool. Within the semiconductor industry, CMSIS establishes a consistent approach for software components, hardware parameters and code, helping to increase development productivity. Documentation, libraries and example projects are also available on Infineon’s dedicated Expansion Pack GitHub page,helping to support the quick deployment of your hardware environment.　　Innovation Through Collaboration　　Through the Infineon AIROC™ STM32 Expansion Pack, engineers can leverage an effective design environment to evaluate a range of Murata M.2 wireless modules (featuring Infineon chipsets) with STM32 Nucleo boards. With full support from dependable hardware, extensive documentation and example libraries, this comprehensive solution is the perfect tool for accelerating IoT development across an extensive variety of applications.　　Comment from Infineon　　Neil Chen, Director, Wi-Fi Product Line Marketing, IoT Compute and Wireless Business Unit at Infineon said “To reduce the barrier to entry for first-time IoT developers, semiconductor and module companies must come together to offer simple, easy-to-use and ease-to-productize solutions to market. Our collaboration with Murata does just that by leveraging our industry-leading AIROC™ Wi-Fi and Bluetooth portfolio to simplify the development of next-generation IoT products for a variety of applications.”　　Comment from Murata　　Masatomo Hashimoto, Director, Connectivity Module Division, Communication and Sensor Business Division, Murata Manufacturing Co. Ltd., said “We are excited to collaborate with Infineon, a global leader in semiconductors in the IoT and power systems to deliver this innovation. Customers face many barriers when bringing connectivity products to market, but this partnership provides a solution for a variety of development challenges and reduces time-to-market for a wide range of applications.”
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Release time：2024-03-08 14:47 reading：814 Continue reading>>
<span style='color:red'>Murata</span> Expands Matter-Compliant IoT Connectivity Portfolio
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Murata Expands Matter-Compliant IoT Connectivity Portfolio

　　Murata today introduced the Type 2FR connectivity module. The solution is driven by NXP® Semiconductor's RW612 Wireless MCU with integrated Tri-radio and measures just 12mm x 11mm. Its class-leading integration, efficiency, and tri-radio capabilities represent a breakthrough in IoT connectivity. Target applications include smart home devices, smart appliances, enterprise and industrial automation, and smart city and smart energy solutions.　　The Type 2FR supports various communication protocols, including dual-band WiFi 6, Bluetooth® Low Energy (LE) 5.3, 802.15.4, and ethernet. This versatility ensures seamless connectivity and operational efficiency. Additionally, Type 2FR is primed for Matter, enabling compatibility with Matter over WiFi, Matter over Thread, and Matter over Ethernet, simplifying device interoperability and management.　　With its built-in 260 MHz Arm® Cortex®-M33 core, 1.2 MB of RAM, 16 MB of flash memory, and fortified by NXP EdgeLock® security technology, the Type 2FR establishes a secure environment for a broad spectrum of IoT applications. The module offers the flexibility to operate in co-processor mode. The RW612 is supported by the NXP MCUXpresso ecosystem of software and tools to accelerate development and reduce time-to-market. The solution also boasts full regulatory certification and provides numerous external antenna options, ensuring compliance and reliability.　　Mehul Udani, Vice President, Corporate Technology and Innovation, Murata Americas stated, "Murata's commitment to innovation and collaboration is evidenced in this miniaturized, high-performance, highly integrated module. By leveraging our proprietary technology and NXP's latest Tri-radio Wireless MCU, we have delivered a robust solution that is approximately 50 percent smaller compared to discrete implementation. Further, the WiFi and ethernet capability allows the IoT device to function as a border router to enable other new applications."　　Larry Olivas, Vice President and General Manager for Wireless Connectivity Solutions, NXP Semiconductors added, "Murata possesses a strong mass market portfolio of wireless module solutions based on NXP’s ICs. This latest offering demonstrates an advanced solution that enables a complete system in a module, thus reducing design time and risk for IoT developers.”　　This announcement represents an expansion of Murata’s new class of IoT offerings announced in March. The Type 2EL is a small and high-performance module based on NXP’s IW612 combo chipset and supports IEEE 802.11a/b/g/n/ac/ax + Bluetooth 5.3 BR/EDR/LE + 802.15.4. The Type 2DL is based on NXP’s IW611 combo chipset and supports IEEE 802.11a/b/g/n/ac/ax + Bluetooth 5.3 BR/EDR/LE.　　Murata will showcase the Matter-enabled tri-radio module solution portfolio at CES 2024 January 9-12 in Las Vegas (West Hall, Booth 6300). Samples will be available at the same time. More information can be requested from the Murata team here.
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Release time：2024-01-12 15:47 reading：1671 Continue reading>>
<span style='color:red'>Murata</span> announces the SCH16T-K01, a next generation 6DoF inertial sensor
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Murata announces the SCH16T-K01, a next generation 6DoF inertial sensor

　　The SCH16T-K01 is an inertial 6DoF XYZ-axis gyroscope and XYZ-axis accelerometer that enables high precision machine control and positioning applications. The device is the first launched product version from Murata's next generation SCH16T 6DoF family, which has further variants upcoming in the future.　　Murata’s industry-proven 3D MEMS process has been updated and enhanced for the SCH16T product family. This sensor has been designed to meet the market need for better positioning solutions and delivers an unmatched level of performance, supported by several added time synchronization features.　　The SCH16T-K01 includes a sophisticated gyro with typical bias instability of 0.5dph and up to 0.3mdps/√Hz noise density. The accelerometer has a dynamic range of up to 26g, which provides resistance against saturation and vibration. Overall, the component exhibits excellent linearity and offset stability through the whole temperature range.　　The component’s output is also internally cross-axis compensated, eliminating the need for extensive calibration at the user’s end. In addition, through the integration of these features, the SCH16T-K01 can deliver incredibly accurate measurements in machine control and guidance without needing field calibrations.　　The SCH16T-K01 is ideally suited to industrial applications and use cases such as construction and agricultural machines, material handling equipment, and marine instrumentation.
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Release time：2024-01-09 14:48 reading：1634 Continue reading>>
<span style='color:red'>Murata</span> and IIJ to launch a new IoT data service, “Crossborder Co-DataBiz Platform”
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Murata and IIJ to launch a new IoT data service, “Crossborder Co-DataBiz Platform”

　　Murata and IIJ have today announced the launch of the Crossborder Co-DataBiz IoT data service platform, a collaborative service founded on the sensing and network technologies, data analytics, business model knowledge and know-how developed by the two organizations through the highly successful Traffic Counter data service.　　Commercially available from today, the platform enables one-stop provision of everything required to setup and operate a cross-border data collection and analysis business. Customers of the service gain access to all systems and functions required to collect, analyze, and act upon acquired data, including the sensor devices, the networks necessary for data collection, the cloud infrastructure for data utilization, and monitoring and operating systems at both the edge and the cloud.　　Murata’s expertise in advanced IoT devices is complimented by IIJ’s cloud services, certified for privacy protection to APEC CBPR*1 and European BCR*2 approval. Security measures for data storage and utilization are ensured by Safous, IIJ's network service providing integrated, zero-trust level 4 security.　　This robust and secure platform complies with all relevant local laws and regulations within Southeast Asia, including aspects relating to cross-border use of acquired data. Customers can also leverage Murata’s know-how and relationships with local service providers and governments to customize the collection, accumulation, analysis, and visualization of their operational data.　　The Co-Databiz platform is ideally suited to applications such as:　　Maintenance of roads and equipment in public transportation　　Traceability management of automobile and other mobile data　　Sensing of local workers in ports and industrial areas and improving the working environment　　Soil, water, and production management in smart agriculture　　Two early examples of customer solutions built upon the Co-Databiz platform include:　　The Tripod Works TRac Cloud solution enables centralized management of alcohol checker measurements in the cloud via a smartphone app. The solution also enables ID verification by transmitting photographs along with the result. This service is being developed in response to commercial driving regulations, currently in Japan and soon to become legal requirements in Thailand. IIJ and Murata’s expertise will guarantee the security of this confidential information in accordance with local laws.　　Nippon Koei and UrbanX Technologies are developing an AI solution which automatically detect road surface damage based on images obtained from smartphones and other cameras installed in vehicles and displays maps and detailed road surface damage information on a management screen on the Web. The solution enables local governments to save labor costs, improve the efficiency of road inspections and repairs and implement preventative maintenance programs.　　*1CBPR (Cross Border Privacy Rules): The CBPR certification system applies to the cross-border protection of personal data by corporations or organizations, indicating their compliance with the APEC (Asia-Pacific Economic Cooperation) privacy principles in the transfer of personal data.　　*2BCRs (The Binding Corporate Rules): BCRs are documented internal rules that define the group's personal data protection policies, written in accordance with the EU's General Data Protection Regulation (GDPR). IIJ Group received approval for its BCRs, from the Data Protection Authority for the German state North Rhine-Westphalia in 2021.　　Murata in Brief　　Murata Manufacturing Co., Ltd. is a worldwide leader in the design, manufacture and sale of ceramic-based passive electronic components & solutions, communication modules and power supply modules. Murata is committed to the development of advanced electronic materials and leading edge, multi-functional, high-density modules. The company has employees and manufacturing facilities throughout the world.
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Release time：2023-12-14 13:53 reading：1864 Continue reading>>
A World’s First: <span style='color:red'>Murata</span> Enables Better Wi-Fi 6E and Wi-Fi 7 Antenna Design with Cutting-Edge Parasitic Element Coupling Device
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A World’s First: Murata Enables Better Wi-Fi 6E and Wi-Fi 7 Antenna Design with Cutting-Edge Parasitic Element Coupling Device

　　Murata has announced its new Parasitic Element Coupling Device. This state-of-the-art solution improves antenna efficiency by magnetically coupling the parasitic element with the antenna and is the world's first solution designed for Wi-Fi 6E and Wi-Fi 7 products. For designers of smartphones, tablets, network routers, game consoles, and other compact electronics, it enables them to build more efficient antennas – a key requirement for many modern space-constrained devices.　　To develop products conforming to Wi-Fi 6E and Wi-Fi 7 standards, which utilize high-speed wireless communication, multiple high-performance antennas must be installed in electronic devices to improve communication speed and quality.　　However, as the dimensions of heatsinks and batteries expand, as processors become more advanced, the available space for mounting antennas tends to decrease.　　Consequently, there is a need for smaller antennas. But there is a technical limitation, in that the efficiency of wide-band antennas decreases when they are miniaturized. Therefore, designers need a solution that achieves both miniaturization and high performance.　　Murata’s solution is a parasitic element coupling device, made with its multilayer technology as a four-terminal surface-mount component of just 1.0 x 0.5 x 0.35mm.　　Murata’s parasitic element coupling device connects the feeding antenna* to its parasitic elements more effectively than is possible through free space. It acts as a tiny coupling device whose compact size enables strong coupling performance without the use of magnetic materials, which would be inappropriate at the targeted operating frequencies. One side of the coupling device is connected, at very low insertion loss, between a device’s RF circuitry and its main antenna. The other side is connected between the ground and the parasitic element. The resultant, more direct coupling enables the resonance characteristics of the parasitic element to be added to those of the feeding antenna. As a result, it enables more efficient operation across a broader frequency range or on multiple discrete bands.　　The device helps to combat that when an antenna is made smaller, the coupling between it and the parasitic elements is reduced, while the coupling between the parasitic elements and the ground is increased. By sustaining the coupling between the feeding antenna and parasitic element, parasitic element coupling device enables designers to use miniaturized antenna design methods without impacting the communication band of efficiency.　　The feeding antenna can cause an impedance mismatch when used over a wide band, leading to a degradation in wireless performance. In addition, when an antenna with a mismatched impedance is connected to a communication circuit using a long cable, the long cable can promote the impedance mismatch, causing larger insertion loss than expected and significantly reducing wireless communication performance. By using the device, you can improve antenna matching and reduce performance degradation in wireless communications even when using long cables.
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Release time：2023-12-13 14:15 reading：2206 Continue reading>>
<span style='color:red'>Murata</span>：World’s First 1 µF Capacitance 100 V Multilayer Ceramic Capacitor in a 1608M Size Commercialized
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Murata：World’s First 1 µF Capacitance 100 V Multilayer Ceramic Capacitor in a 1608M Size Commercialized

　　Murata Manufacturing Co., Ltd. (hereinafter, “Murata”) has developed and started mass producing the GRM188D72A105KE01 (hereinafter, “this product”), a 1608M (1.6 x 0.8mm) size multilayer ceramic capacitor with the world’s largest* capacitance of 1 µF and rated at 100 V for use in 48 V power supply lines in base stations, servers, and data centers. Samples are available.　　*Murata findings as of November 20, 2023.　　With the increasing adoption of 5G technology, mobile data traffic is projected to increase dramatically, requiring base station infrastructure to become smaller in size, more lightweight, and lower in power consumption in order to expand 5G network coverage. The number of circuit board components also continues to increase with the rise in multiple output power supply use, creating demand for device sizes to be maintained or made smaller and making it increasingly important for circuit boards to have higher component densities.　　Murata’s proprietary thin layer technology has allowed for this product to be approximately 67% smaller in volume and 49% smaller in area than our 2012M size (GRM21BC72A105KE01) multilayer ceramic capacitors. This will allow the capacitor to take up less space on the circuit board.　　Specifications
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Release time：2023-11-24 14:54 reading：1580 Continue reading>>
<span style='color:red'>Murata</span>：What Are the Conditions for Increasing the Efficiency of Power Conversion and Motor Drives and for Expanding the Use of SiC and GaN Power Semiconductors?
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Murata：What Are the Conditions for Increasing the Efficiency of Power Conversion and Motor Drives and for Expanding the Use of SiC and GaN Power Semiconductors?

　　Governments around the world and companies in all industries and businesses are coming together to engage in efforts to achieve carbon neutrality (Fig. 1). Every conceivable multifaceted decarbonization measure is being taken. This includes, for instance, the utilization of renewable energies such as solar power, the electrification of equipment that was previously used by burning fossil fuels, and the reduction in power consumption of existing devices like home appliances, IT equipment, and industrial motors.　　Various countries and regions have introduced carbon pricing mechanisms as systems to shift greenhouse gas emissions from business activities to costs. As a result, in addition to being meaningful as social contribution, carbonization initiatives now have a clear numerical impact on the financial statements that serve as a report card for corporate management.　　Full Model Change in Semiconductor Materials for the First Time in 50 Years　　There has been an increase in activity for decarbonization efforts. Against this background, there is a field in semiconductors where the pace of the movement in technological innovation is rapidly accelerating. This is the power semiconductor field.　　Power semiconductors are semiconductor devices that play the role of managing, controlling, and converting the power necessary to operate electrical and electronic equipment. These devices are built into so-called power electronics circuits. These circuits include power circuits that stably supply drive power to home appliances and IT equipment, power conversion circuits to transmit and distribute power without waste, and circuits that drive motors with high efficiency at a torque and rotational speed that can be controlled freely. These power semiconductors, which are key devices to realize a sustainable society, have now started to undergo a once-in-50-years full model change.　　Power semiconductors have various device structures including MOSFET*1, IGBT*2, and diodes. They are used differently according to the purpose. Nevertheless, although the structure differs, silicon (Si) has consistently been used for more than 50 years as the device material. That is because Si has good electrical characteristics and has the property of being easy to process into various device structures at the same time.　　*1: A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a type of Field Effect Transistor. It functions as an electrical switch. These transistors consist of three layers: a metal, oxide, and semiconductor. The current is turned on and off by applying a voltage to the electrode called a gate.　　*2: An Insulated Gate Bipolar Transistor (IGBT) is a transistor with a structure that combines a MOSFET and bipolar transistor. It is characterized by combining the high-speed operation of the MOSFET with the high withstand voltage and low resistance of the bipolar transistor.　　However, Si-based power semiconductors are no longer able to clear the high level of technical requirements to further reduce the power consumption of various electrical and electronic equipment. To overcome this situation, progress is underway on the utilization of new materials such as silicon carbide (SiC) and gallium nitride (GaN), which are more suitable than Si as materials for power semiconductors. SiC and GaN have multiple physical properties and characteristics suitable for power semiconductors. These include their dielectric breakdown field strength (affects the withstand voltage), mobility (affects the operating speed), and thermal conductivity (affects reliability). If we can develop a device that brings out those excellent characteristics, we can realize power semiconductors with even higher performance.　　SiC-based MOSFETs and diodes have already been commercialized. They are being used in electric vehicle (EV) motor drive inverters, DC/AC converters in solar power generation power conditioners, and other equipment. GaN-based HEMT*3 have also already been commercialized. They are now being used in AC converters for ultra-small PCs, chargers for smartphones, and other equipment.　　*3: A High Electron Mobility Transistor (HEMT) is a Field Effect Transistor that enables high-speed switching by joining semiconductors with differing properties to induce electrons with high mobility.　　Evolution of Capacitors, Inductors, and Other Equipment Is Essential to Draw out the Potential of SiC and GaN　　It is not possible to draw out the full outstanding potential of power semiconductors made based on new materials simply by replacing the Si-based devices in existing power electronics circuits. This is because the other semiconductor ICs, passive components, and even the control software that comprise power electronics circuits have been developed and selected on the assumption they would be used in Si-based power semiconductors. It is necessary to newly re-develop and re-select these peripheral components as well to effectively utilize new material-based power semiconductors.　　Fig. 2: Example of an AC/DC converter circuit utilizing a GaN-based power semiconductor used in data center servers and other technologies　　For example, numerous GaN HEMTs are being used in AC/DC converter circuits that have adopted GaN HEMTs recently introduced to lower power consumption in the power supplies of data center servers (Fig. 2). It is possible to improve the switching frequency (operating frequency) of power electronics circuits by utilizing the features of GaN HEMTs in that they enable high-speed switching at high voltages. The reactance value of capacitors embedded into circuits and inductors in reactor signal processing circuits can be lower in circuits with a high operating frequency. In general, low reactance components have a small size. Therefore, it is possible to downsize the circuit board and to improve the power density. Similarly, introducing SiC MOSFETs even in inverter circuits which drive EV motors and other components enables the downsizing of peripheral components and also allows the overall inverter circuits to be made smaller and more lightweight.　　On the other hand, a high level of noise may arise from high-voltage and high-speed switching power supplies. There is a possibility that noise may then adversely affect the operation of the peripheral equipment. Power supplies comprising power semiconductors made with SiC and GaN switch at an even higher frequency. Therefore, the risk of noise occurring further increases. Accordingly, stricter noise suppression is required than when using existing power electronics circuits. At that time, there is a need to use noise suppression components designed to be applied to high-voltage, large-current, and high-frequency circuits rather than those for conventional circuits.　　In addition, there is also a need for small transformers that operate at even higher frequencies for transformers that are particularly heavy components even among passive components. Low profile planar transformers and other components have already been developed and launched onto the market under the assumption that they will be used in SiC- and GaN-based power semiconductors.　　Attention Focusing on the Evolution of Peripheral Components in Addition to Power Semiconductors　　Various types of semiconductors, not limited to power semiconductors, have been made based on Si up to now. Therefore, many existing electronic components have been developed under the implicit assumption that they will be used by being combined with Si-based semiconductors. It may become necessary to develop new products to suit the new technical requirements instead of simply searching for even better products among existing components to maximize the effect of introducing power semiconductors made with new materials.　　In general, Si-based power semiconductors tend to operate at lower speeds the greater the voltage and current they can handle (Fig. 3). That is the reason why there are not enough small capacitors and reactors that can handle high voltages and large currents. Moreover, there is a trend to simplify the heat dissipation system and to reduce the size, weight, and cost for SiC-based power semiconductors that can operate stably under high temperatures. In these cases, the passive components also need to have a guaranteed high reliability under a high-temperature environment.　　The introduction of new materials in the power semiconductor field is a major move to update the electrical and electronic ecosystem that has been optimized to Si materials for more than 50 years. Therefore, we also want to pay a great deal of attention to the evolution of peripheral electronic components optimized for new materials.
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Release time：2023-11-22 14:42 reading：1709 Continue reading>>

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Qr code of ameya360 official account

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AMEYA360 mall (www.ameya360.com) was launched in 2011. Now there are more than 3,500 high-quality suppliers, including 6 million product model data, and more than 1 million component stocks for purchase. Products cover MCU+ memory + power chip +IGBT+MOS tube + op amp + RF Bluetooth + sensor + resistor capacitance inductor + connector and other fields. main business of platform covers spot sales of electronic components, BOM distribution and product supporting materials, providing one-stop purchasing and sales services for our customers.

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