<span style='color:red'>NOVOSENSE</span> at Automotive World Korea 2024: Enabling Automakers to Create Smarter, Safer Vehicles
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NOVOSENSE at Automotive World Korea 2024: Enabling Automakers to Create Smarter, Safer Vehicles

　　NOVOSENSE Microelectronics, a global provider of highly robust & reliable analog and mixed signal chip, today announced it will demonstrate the newest additions to its solutions in automotive OBC/DC-DC, traction inverter, BMS, body control module, lighting and thermal management system at the Automotive World Korea from April 24 to 26 at booth D122 in COEX Hall B, Seoul. During exhibition, NOVOSENSE engineer will give presentation about its automotive solutions on April 25.　　Empowering engineers' automotive system design with product innovation　　NOVOSENSE will showcase how its innovative products can help automakers to develop smarter and safer automotive system:　　To support the trends of multi-node, high-speed, and high-stability in-vehicle communication, NOVOSENSE's automotive-grade CAN SIC, NCA1462-Q1, can achieve a transmission rate of ≥8Mbps in a star network, and maintain good signal quality with high EMC performance and patented ringing suppression function.　　More channels are integrated on a single LED driver chip to support the increasing number of LED beads. NOVOSENSE's LED driver integrates up to 24 channels on a single chip, supporting stronger current driving capability and complete circuit protection functions.　　Thermal management systems are transitioning from distributed architectures to integrated architectures. NOVOSENSE's highly integrated small motor driver SoC, NSUC1610, realizes efficient, real-time control of motor applications by integrating an ARM core MCU, a 4-way half-bridge driver, and a LIN interface on a single chip. It is widely used in electronic expansion valves, AGS, and electronic air vents.　　Proven record and automotive-qualified　　Since the launch of its first automotive chip in 2016, NOVOSENSE has always adhered to the “Reliable & Robust” quality policy and implemented Automotive Electronics Council (AEC)’s standards throughout the whole process. With its forward-looking product layout, robust quality performance and proven delivery record, NOVOSENSE has been widely recognized: it obtained ASIL-D certification, the highest level of the TÜV Rheinland ISO 26262 Functional Safety Management System in 2021, and joined the AEC as a member of the Component Technical Committee in 2023.　　With over 10 years’ semiconductor design & mass production experience, NOVOSENSE can offer about 1,800 chip products for sale, and automotive application accounts for about 30% of NOVOSENSE revenue in 2023. NOVOSENSE has built partnership with thousands customers worldwide, including many global automotive OEMs and Tier 1/Tier 2 suppliers.
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Release time：2024-04-25 11:39 reading：1562 Continue reading>>
On the Fast Lane: <span style='color:red'>NOVOSENSE</span>'s Ongoing Commitment to Automotive Chip Excellence
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On the Fast Lane: NOVOSENSE's Ongoing Commitment to Automotive Chip Excellence

　　Automobiles are undergoing increasing electrification and digitalization, from electric drive trains to immersive infotainment systems in the cockpit.　　NOVOSENSE, a pioneering force in the automotive chips, recently unveiled several groundbreaking products aimed at enhancing performance, reliability, and efficiency in automotive applications.　　NCA1462-Q1, an automotive-qualified CAN SIC based on innovative ringing suppression patent　　NCA1462-Q1 is based on its proprietary innovative ringing suppression patent. Compared with CAN FD solution, NCA1462-Q1 is further compatible with the CiA 601-4 standard on the premise of meeting the ISO 11898-2:2016 standard, and can achieve a data rate of ≥8Mbps. With NOVOSENSE's patented ringing suppression function, NCA1462-Q1 maintains good signal quality even in the case of star network multi-node connection; in addition, its ultra-high EMC performance and more flexible VIO as low as 1.8V can effectively help engineers simplify system design and create high-quality automotive communication system.　　NSHT30-Q1, a relative humidity (RH) and temperature sensor based on CMOS-MEMS　　NSHT30-Q1 integrates a complete sensor system on a single chip, including a capacitive RH sensor, CMOS temperature sensor and signal processor, and an I2C digital communication interface. It is designed in DFN package with Wettable Flank, and the product size is 2.5mm×2.5mm×0.9mm. NSHT30-Q1's I2C interface features two selectable addresses with communication speed up to 1 MHz and supports a wide supply voltage range of 2.0V~5.5V.　　NSOPA9xxx series, general-purpose operational amplifiers for automotive applications　　NSOPA9xxx series is suitable for 40V high voltage and offers a variety of product models with bandwidth option of 1MHz/5MHz/10MHz and 1/2/4-channel. It meets the reliability requirements of AEC-Q100 Grade 1, and can operate from -40°C to 125°C. Different package versions are available to meet different customer needs: SOT23-5, SOP-8 for 1-channel; MSOP-8, SOP-8 for 2-channel; and TSSOP-14, SOP-14 for 4-channel.　　NSD3604/8-Q1, a new automotive-qualified 4/8-channel multi-channel half-bridge driver　　NSD3604/8-Q1 can drive multiple loads and is used in automotive domain control architecture. It covers 4/8-channel half-bridge drive which can drive 4 DC brushed motors, and achieve multi-channel high-current motor drive, and also be used as a multi-channel high-side switch drive. NSD3604/8-Q1 is suitable for multi-motor or multi-load applications, such as car window lifting, electric seats, door locks, electric tailgates, and proportional valves and other body control applications.
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Release time：2024-04-17 13:24 reading：706 Continue reading>>
<span style='color:red'>NOVOSENSE</span> launches automotive-grade temperature and humidity sensor NSHT30-Q1, driving the development of automotive intelligence
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NOVOSENSE launches automotive-grade temperature and humidity sensor NSHT30-Q1, driving the development of automotive intelligence

　　NOVOSENSE's new automotive temperature and humidity sensor NSHT30-Q1 is a relative humidity (RH) and temperature sensor based on CMOS-MEMS.　　NSHT30-Q1 integrates a complete sensor system on a single chip, including a capacitive RH sensor, CMOS temperature sensor and signal processor, and an I2C digital communication interface. It is designed in DFN package with Wettable Flank, and the product size is only 2.5mm×2.5mm×0.9mm. The I2C interface communication mode, small and reliable package, and wider operating temperature range make NSHT30-Q1 well suited for automotive applications.　　With the development of automotive intelligence, in-vehicle systems increasingly rely on judgment of the surrounding environment to make decisions. To achieve real-time control and autonomous operation, these systems need to capture necessary information with high-precision sensor products that can respond quickly.　　Take the automotive 5-in-1 sensor as an example. It uses the built-in temperature and humidity sensor to detect the temperature and humidity on the inside of the front windshield, and then calculates the dew point temperature. In this way, the air conditioning system can adjust the temperature inside the vehicle, the air outlet mode, the internal and external circulation, and other functions according to these signals, effectively reducing the humidity inside the vehicle and achieving the defogging function.　　At the same time, the lidar cannot work without support from the temperature and humidity sensor. The temperature and humidity sensor monitors the radar's operating temperature and humidity to ensure that it operates in a suitable operating environment to avoid performance degradation due to excessive temperature. The temperature and humidity sensor can also detect relative humidity to monitor whether the lenses of the lidar and camera module are broken, thereby avoiding damage to internal optical components caused by humid environments and ensuring vehicle driving safety.　　NOVOSENSE's NSHT30-Q1 is an automotive single-chip integrated temperature and humidity sensor with high reliability, high precision and low power consumption, suitable for various automotive applications, such as automotive HVAC control modules and battery management systems. By helping vehicles achieve more efficient and stable system performance, it provides strong support for the development of automotive intelligence.　　In addition, NSHT30-Q1's I2C interface features two selectable I2C addresses with communication speed up to 1 MHz and supports a wide supply voltage range of 2.0V~5.5V for various applications. Also, with programmable interrupt thresholds, alarms and system wake-up can be provided without the need for a microcontroller to continuously monitor the system.　　Performance parameters of NSHT30-Q1　　· Relative humidity (RH) sensor　　- Operating range: 0%~100　　- Precision: ±3% (typical)　　· Temperature sensor:　　- Operating temperature range: -40°C~125°C　　- Precision: ±0.3°C (typical)　　· Relative humidity and temperature compensated digital output　　· Wide supply voltage range: 2.0V~5.5V　　· I2C digital interface with communication speed up to 1 MHz　　- Two selectable addresses　　- Data protection with CRC　　· Low power consumption: average current of 2.5µA　　· 8-Pin Wettable Flank DFN package　　· AEC-Q100 compliant
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Release time：2024-04-08 16:41 reading：1598 Continue reading>>
<span style='color:red'>NOVOSENSE</span>'s isolated driver with protection function helps enhance the safety and stability of the electronic control system in the new energy vehicle
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NOVOSENSE's isolated driver with protection function helps enhance the safety and stability of the electronic control system in the new energy vehicle

　　The main drive electronic control system is an important part of a new energy vehicle. This article will start from the system block diagram of the electronic control system, introduce the components of the system and their functions, and focus on the use of NOVOSENSE's single-channel isolated driver with protection function NSI6611, in the electronic control system: its Miller clamp function can well prevent short circuits; and the DESAT function can shut down IGBT / SiC in time when a short circuit occurs, protecting IGBT / SiC from damage and ensuring safe and stable operation of the system.　　Contents　　1)Introduction to the main drive electronic control system driver and the NSI6611-based driver board　　1. Composition of the main drive electronic control system　　2. Main chips on the driver board　　3. Interface definition　　4. NSI6611 application circuit　　2)Introduction to Miller clamp and the active Miller clamp function of NSI6611　　1. Miller effect　　2. Active Miller clamp　　3. Short circuit detection of power devices　　3)Introduction to the DESAT protection function of NSI6611　　1. DESAT detection peripheral circuit configuration and parameters　　2. DESAT protection timing　　3. Soft turn-off function　　1) Introduction to the main drive electronic control system driver and the NSI6611-based driver board　　1.1 Composition of the main drive electronic control system　　The main drive electric control system consists of low voltage battery, VCU, MCU, high voltage battery and resolver three-phase motor. As shown in Figure 1 below, inside the blue dotted line is the main drive motor controller part and inside the red dotted line is the driver board that will be highlighted in this article.　　Functionally, the low voltage battery provides low voltage power supply for the system, and the VCU sends instructions to the electronic control system via the CAN bus and reads the status of the electronic control system; the high voltage battery provides high voltage power supply, and the Flyback circuit provides positive and negative voltages for the IGBT driver to drive the three-phase motor; the LDO (low dropout linear regulator) provides +5V power supply for the driver chip. NOVOSENSE's high voltage isolated driver NSI6611 is used to drive the IGBT and SiC modules; the current sampling circuit and resolver-to-digital converter are used to control motor operation.　　In the main drive electronic control system, NOVOSENSE provides a variety of chips, including the CAN interface chip, resolver-to-digital converter, power supply chip and high voltage isolated driver chip.　　1.2 Main chips on the driver board　　Figure 2 below is a three-phase drive circuit board designed based on NOVOSENSE's single-channel smart isolated driver NSI6611. The six chips in the blue boxes are all NSI6611. The driver board also uses NOVOSENSE's Flyback power control chip NSR22401 to provide positive and negative voltages for the high voltage drive side of NSI6611; the LDO chip NSR3x provides 5V power supply for the low voltage side of NSI6611.　　NSI6611 is an automotive-grade, high voltage isolated gate driver with protection function that can drive IGBTs and SiCs, and it supports a peak voltage of up to 2121V and a maximum drive current of 10A without the need for an external drive circuit; CMTI (common-mode transient immunity) can be as high as 150kV/μs. In addition, it integrates active Miller clamp and DESAT (desaturation) protection, soft turn-off and ASC (active short circuit) functions internally, with an operating temperature range of -40°C to +125°C.　　1.3 Interface definition　　As shown in Figure 3 below, the left side of the driver board is the signal interface between the driver board and the control board, including 6 input signals provided by the control board for PWM control; 6 FAULT output signals provided to the control board when NSI6611 detects IGBT overcurrent or undervoltage; 6 Ready output signals used to indicate whether the NSI6611 power supply is undervoltage; and 2 RESET input signals that control 3 high sides and 3 low sides respectively. The right side of the driver board is the power interface, and the power supply voltage range is 9V to 16V.　　1.4 NSI6611 Application Circuit　　Figure 4 below is the drive circuit of NSI6611. The left side is the low voltage control side. The 100Ω resistor connected in series on the signal line can effectively reduce signal reflection; since the Fault and Ready signals have an internal Open Drain structure, a 5.1kΩ pull-up resistor needs to be added. In addition, the RC circuit composed of the PWM signal and a 1nF capacitor can filter out high-frequency signals, and a 0.1μF decoupling capacitor is added to VCC1.　　The right side is the high voltage drive side. Two 1206 package gate resistors are connected in parallel. The gate has a 10k pull-down resistor. The gate capacitance can be adjusted for different applications. The CLAMP pin is connected to the GATE through a 0Ω resistor.　　2) Introduction to Miller clamp and the active Miller clamp function of NSI6611　　2.1 Miller effect　　The Miller effect refers to the phenomenon in a transistor or field effect tube that the capacitance at the output of the amplifier increases due to the interaction between the input capacitance and the gain of the amplifier. It can not only increase switching delay, but also cause parasitic turn-on.　　Due to the inherent characteristics of semiconductors, there are various parasitic capacitances inside the IGBT. The capacitance between the gate and collector is called Miller capacitance. It is often seen in tests that the gate voltage does not rise directly to the VCC voltage, but rises to a voltage plateau, maintains for a period of time and then rises again. This voltage plateau is the Miller plateau, which is generated by Miller capacitance.　　Miller capacitance may also cause false turn-on of the low side. Typically, motor drives require the use of the high and low sides. When Q2 is turned off and Q1 is turned on, a certain current will be generated due to the high dv/dt and Miller capacitance. We can calculate the current by using the formula I=C * dv/dt. The current flowing through the gate resistor will generate a VGE voltage. When this voltage exceeds the turn-on threshold of Q2, Q2 will turn on, and at this time, Q1 is already in the ON state, thus causing a shoot-through short circuit.　　2.2 Active Miller clamp　　In order to solve the problem of shoot-through caused by the Miller effect, negative voltage turn-off can be used, but this will increase the complexity of the power supply design and increase the BOM cost; the second option is to use a driver chip with Miller clamp function to control the IGBT turn-off process.　　The IGBT turn-off process controlled by a driver chip with Miller clamp function is shown in Figure 6 below. First, the OUTL pin is turned on, causing the gate voltage to drop; when the gate voltage drops below the CLAMP threshold, the CALMP pin is turned on, causing the OULT pin to turn off. The resulting path can effectively bypass the gate resistor, thus avoiding the phenomenon of shoot-through. It is worth noting that the Miller clamp module only works when the IGBT is turned off.　　2.3 Short circuit detection of power devices　　IGBT and SiC devices vary in their short circuit capabilities. Before using a power device to design a drive system, you must first understand its basic parameters such as maximum voltage, maximum current and Rdson (on-resistance). Short-circuit capability is also a parameter worthy of focus, since the short circuit characteristics of the device need to be known when short circuit protection is designed.　　Take the short circuit characteristic parameters of the IGBT as an example. At 25°C, its maximum short circuit time is 6μs, which means that the IGBT needs to be turned off in time within 6μs. When the short circuit current reaches 4800A, the value is already several times the normal operating current. Once a short circuit occurs, a large amount of heat will be generated instantly, causing the junction temperature to rise sharply. If it is not turned off in time, the device will be burned and there is even a risk of fire. This must be avoided in system design.　　Generally, the short circuit time of IGBT can reach up to 10μs, while the short circuit time of SiC is only 2~3μs, which brings great challenges to short circuit protection. Therefore, short circuit must be detected and turn-off must be performed in time.　　Method 1 is current detection. A resistor is connected in series with the IGBT, or a current sensor is used to directly detect the overcurrent condition. However, this will increase the cost significantly and make the circuit system more complex.　　Method 2 is desaturation detection, also known as DESAT protection. As shown in Figure 7 below, we can see from the graph of VCE voltage and collector current that when VCE is less than 0.4V, no current flows through the cut-off region; as the VCE voltage increases, the current also increases and a saturation region appears, and then it enters the linear region, i.e., the desaturation region.　　Usually, when the IGBT works in the saturation region, it will enter the desaturation region once a short circuit occurs. It can be seen that the VCE voltage generally does not exceed 2V in the saturation region; if it enters the desaturation region, VCE will rise rapidly and even reach the system voltage. Desaturation detection is to detect whether the IGBT has entered the desaturation region by detecting the VCE voltage.　　3) Introduction to the DESAT protection function of NSI6611　　3.1 DESAT detection peripheral circuit configuration and parameters　　DESAT detection consists of NSI6611 and external DESAT capacitor, resistor and high voltage diode. The NSI6611 chip integrates a 500μA constant current source and comparator internally.　　When the IGBT is turned on normally, the VCE voltage is very low, basically below 2V, and the diode is in a forward turn-on state. The voltage value of VDESAT is equal to the voltage drop of the resistor plus the voltage drop of the diode, plus the VCE voltage. Assuming that the resistance of the resistor is 100Ω, the forward voltage drop of the diode is 1.3V, and VCE is 2V, then, according to the formula in Figure 8, we can get: When the IGBT is turned on normally, the voltage detected by DESAT is basically less than 3.35V.　　When the IGBT is short-circuited, the VCE voltage will rise rapidly. At this time, the diode is in the OFF state, and the current will flow to the DESAT capacitor and charge it. Since the DESAT current of NSI6611 is 500μA and the DESAT threshold is 9V, this means that a capacitor needs to be matched to charge the DESAT capacitor to 9V at 500μA within the short circuit time.　　Assuming that the DESAT capacitance is 56pF, according to the capacitor charging formula in Figure 8: the charging time of the capacitor is about 1μs; plus the blanking time of 200ns and the filtering time of 200ns, the total short circuit protection response time is 1.4μs. This time is not only shorter than the safe short circuit time of IGBT, but also shorter than the safe short circuit time of SiC.　　3.2 DESAT protection timing　　Figure 9 below is the DESAT protection timing diagram. It can be seen from the figure that in step 1, GATE rises and DESAT starts the blanking time; in step 2, the blanking time ends and the DESAT current is turned on, and if the IGBT is short-circuited, the diode enters the cut-off state and the DESAT current charges the capacitor; in step 3, when the DESAT capacitor is charged to the threshold of 9V, the filtering time of DESAT protection starts; in step 4, the filtering time ends and GATE is turned off.　　Figure 9: DESAT protection timing diagram　　3.3 Soft turn-off function　　As mentioned above, GATE is turned off when a DESAT fault is detected. So, is it enough to just turn it off normally? Not really. When a short circuit occurs, the IGBT current is at least 6 to 8 times the normal current. According to the formula, the voltage is equal to the stray inductance of the system multiplied by di/dt (V=Ls*di/dt). If such a large current is turned off quickly, a large VCE voltage will inevitably be generated, which is enough to damage the IGBT. There are only two ways to reduce VCE overshoot: one is to reduce stray inductance, and the other is to reduce di/dt.　　Firstly, due to the parasitic parameters of the device, PCB routing, structural design, etc., there is inevitably a certain amount of stray inductance; secondly, to reduce di/dt, under the premise of a certain current, the only way is to increase the turn-off time, that is, let the IGBT turn off slowly for safe turn-off. NSI6611 can provide 400mA soft turn-off, thereby suppressing VCE overshoot and effectively solving the problem of device protection.
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Release time：2024-02-29 14:26 reading：3443 Continue reading>>
<span style='color:red'>NOVOSENSE</span> Launches NSI22C1x Series Isolated Comparators to Help Create More Reliable Industrial Motor Drive Systems
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NOVOSENSE Launches NSI22C1x Series Isolated Comparators to Help Create More Reliable Industrial Motor Drive Systems

　　NOVOSENSE announced the launch of its NSI22C1x series isolated comparators based on capacitive isolation technology, which include NSI22C11 isolated single-ended comparators for overvoltage and overtemperature protection and NSI22C12 isolated window comparator for overcurrent protection. The NSI22C1x series can be used for overvoltage, overtemperature and overcurrent protection of industrial motor drives, solar inverters, uninterruptible power supplies and on-board chargers. While improving system reliability, it supports higher power density system designs and simplifies peripheral circuits to reduce the size of system protection circuits by 60% compared to the traditional discrete scheme.　　Industrial motor drive systems, for example, are developing towards higher efficiency, higher power density and higher reliability. At the same time, with the application of wide bandgap semiconductors represented by SiC and GaN in power devices, higher requirements are placed on system reliability, especially the response time of overcurrent and short-circuit protection. The NSI22C1x series isolated comparators launched by NOVOSENSE can meet the growing demand for high reliability, high efficiency and compact design in industrial motor systems.　　Ultra-low propagation delay and ultra-high CMTI support higher power density designs　　The application environment of industrial motor drive systems is complex and harsh. Unexpected conditions such as bridge arm shoot-through, phase-to-phase short-circuit and ground short-circuit may occur, resulting in excessive current flowing into the motor drive system and causing damage to the driver. Traditional overcurrent detection design uses a discrete scheme of general-purpose comparators and optocouplers, with a response time of 3~5µs. As power devices shift from silicon-based IGBTs to third-generation semiconductors SiC and GaN, their short-circuit withstand time has been shortened to less than 1µs, which can no longer be met by the traditional scheme.　　VIN(CH1), VOUT(CH2), VREF=320mV (protection threshold), NSI22C12 propagation delay measured 144ns　　Meanwhile, general-purpose op amps/comparators have limited common-mode voltage tolerance and are limited in applications such as DC+ overcurrent and phase current overcurrent detection. If only DC- overcurrent is monitored, the fault condition of the motor shell being shorted to ground cannot be covered. NOVOSENSE's NSI22C12 isolated comparators provide a single-chip isolated overcurrent protection scheme that can cover a more comprehensive range of fault scenarios, support a maximum propagation delay of 250ns and bi-directional overcurrent protection, and provide CMTI (Common-Mode Transient Immunity) of up to 150kV/μs, which greatly improves system reliability and supports the adoption of higher power density designs for customers' motor drive systems.　　VIN=0V, VOUT(CH1), CMTI(CH3)=150kV/μs, VOHmin =2.40V>0.7*VDD2(VDD2=3.3V)　　When the primary and secondary sides of NSI22C12 withstand a CMTI of up to 150kV/μs, the output still maintains a high level and overcurrent protection will not be mistakenly triggered.　　Simplified system designs reduce the size of system protection circuits by 60%　　In industrial motor drive systems, the bill of materials for the overcurrent protection scheme based on general-purpose comparators and optocouplers is up to 27 pieces, and the system failure rate of peripheral circuits consisting of numerous discrete devices is relatively higher. NSI22C12 integrates a high-voltage LDO with a primary-side supply range of 3.1~27V, which can help customers reduce extra step-down regulators; NSI22C12 also integrates a 100μA ±1.5% high-precision current source, which can help customers achieve ±20mV~±320mV bidirectional threshold adjustment with only a single resistor on board.　　With the support of a highly integrated design, the overcurrent protection scheme using NSI22C12 isolated comparators can reduce the bill of materials to 11 pieces and reduce the size of system protection circuits by 60%, greatly reducing the use of discrete devices, simplifying the system design, and further improving system reliability. At the same time, in some systems with fast protection requirements, using NSI22C12 isolated comparators can reduce the use of high-speed optocouplers and provide customers with more cost-effective design options.　　Typical application block diagram of NSI22C12 for bus/phase current protection in motor drive systems　　Packaging and selection　　NSI22C11 isolated single-ended comparator and NSI22C12 isolated window comparator NSI22C12 are available in both SOP8 package (for basic isolation) and SOW8 package (for reinforced isolation). In addition, the NSI22C1x series supports a wide operating temperature range of -40°C to 125°C. Currently, the industrial version of the NSI22C1x series has been put into mass production, and the AEC-Q100 automotive version is expected to be launched in the second half of 2024.
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Release time：2024-02-28 13:58 reading：3005 Continue reading>>
<span style='color:red'>NOVOSENSE</span> Won VDE Premium Quality Award for High Quality Development
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NOVOSENSE Won VDE Premium Quality Award for High Quality Development

　　VDE (Verband Deutscher Elektrotechnikere), an internationally recognized testing and certification organization, was invited to visit NOVOSENSE's Shanghai office and presented NOVOSENSE with the Premium Quality Award, which fully affirmed NOVOSENSE's outstanding achievements in the field of quality over the years. NOVOSENSE CTO, Sheng Yun, and General Manager of VDE China, Wu Zhongxuan, together with representatives from both parties, attended the award ceremony and had in-depth exchanges on future cooperation.　　Left: NOVOSENSE CTO, Sheng Yun; Right: General Manager of VDE China, Wu Zhongxuan　　As one of the first chip companies in China to apply for VDE certification, NOVOSENSE started its cooperation with VDE on safety certification of isolation series products in 2017. In 2020, NOVOSENSE's isolation series products successfully passed the VDE reinforced isolation certification, becoming the first IC company in China to pass the VDE reinforced isolation certification, which allows it to help customers pass the isolation certification access standard in the European market more easily and thus better support customers' products to go global. Up to now, NOVOSENSE has obtained 3 VDE certificates covering nearly 700 products, and is in a leading position in the industry.　　Wu Zhongxuan, General Manager of VDE China remarked, "China's IC industry has witnessed rapid development in recent years. With the continuous progress of the industry and the requirements for transformation and upgrading as well as quality and efficiency improvement in all walks of life, end customers' pursuit of chip quality in systems has also reached a new level. We see that NOVOSENSE maintains a consistent focus on product quality. VDE is honored to support NOVOSENSE in terms of safety certification and to further help a wider customer base quickly pass the relevant certification requirements in global markets and capture the best market windows."　　Sheng Yun, NOVOSENSE CTO remarked, "VDE provides NOVOSENSE with professional guidance and references in product safety certification, enabling us to benchmark against world-class standards at the product definition stage and driving our continuous innovation at the product level. NOVOSENSE always adheres to the quality policy of 'Robust and Reliable', and we hope to provide safe, stable, reliable and high-quality chip products to our global customers with the support of VDE's authoritative certification, and to go global with our partners with high quality."　　About VDE:　　VDE (Verband Deutscher Elektrotechnikere) has a long history of more than 130 years. Since its inception, VDE has been at the forefront of setting standards, promoting safety and driving innovation in related fields. As an internationally authoritative testing and certification organization and standard setter, VDE aims to promote the cross-field development of electrical engineering and electronic information technology, advance the technological development of innovative applications, provide high-quality technical exchanges, education and training, standard setting as well as professional testing and certification services, and ensure the safe and efficient use of electronic and electrical equipment as well as the high quality of life.
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Release time：2024-01-04 13:58 reading：2884 Continue reading>>
Unleashing potential: how <span style='color:red'>NOVOSENSE</span> elevates energy and power supply through PV solutions
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Unleashing potential: how NOVOSENSE elevates energy and power supply through PV solutions

　　In 2022, the newly installed capacity of photovoltaic (PV) power across the globe registered 239 GW, accounting for two thirds of the total newly installed capacity of renewable energy. The International Energy Agency (IEA) projects that the PV power investment will outpace petroleum investment for the first time in 2023, and that the strong growth momentum is expected to continue through 2023 and beyond. Despite the sustained increase in installed PV power capacity, the solar PV power output only accounted for 4.5% of the global total. According to statistics from the National Energy Administration (NEA), China added 25.87 GW of installed capacity for industrial and commercial PV power systems in 2022, marking an impressive 236.7% year-on-year increase. In Q1 of 2023, the newly installed capacity for industrial and commercial PV power reached 9.21 GW, setting a new record for the year. This demonstrates that China currently leads as the largest incremental market in terms of installed PV power capacity.　　PV stands as a cornerstone in NOVOSENSE's Energy and Power Supply business. NOVOSENSE offers a comprehensive array of solutions, encompassing photovoltaic inverters, energy storage converters, photovoltaic arrays/optimizers, and energy storage battery/ BMS. The 1200V SiC diode series newly launched by NOVOSENSE, offers exceptional efficiency in single- or three-phase PFC, and isolated or non-isolated DC-DC circuits, meeting the requirements of medium- and high-voltage systems. The optocoupler-compatible NOVOSENSE’s NSI6801 adopts the dual-capacitor enhanced isolation technology, and provides stronger isolation performance, longer service life, wider operating temperature range, and faster switching frequency. It boasts a CMTI exceeding 150kV/μs, significantly enhancing its interference suppression capabilities. All these make NSI6801 a better match for SiC devices, enabling their stable and reliable operation. The non-isolated half-bridge driver NSD1224 from NOVOSENSE provides improved input pins and enhanced negative voltage tolerance at the neutral point of the leg, which can ensure higher driver reliability. In addition, GaN devices are used to improve power density and system efficiency in new designs, where the GaN-based driver NSD2621 can come in to bring out the best of GaN devices.　　A PV inverter incorporates many Hall current sensor modules for detection of input and output current. NOVOSENSE's Hall current sensors are smaller than conventional modules, featuring a footprint reduction of over 50%. For example, NSM2019 has an extremely low primary resistance of 0.27 mΩ, continuous primary current capacity of up to 100A, and high surge current resistance capability that meets the photovoltaic inverter input requirements. The ultra-wide-body digital isolator NSI824x from NOVOSENSE provides a creepage distance of up to 15mm, and exceptional EMC performance, making it an ideal choice for photovoltaic systems. The non-isolated/isolated half-bridge drivers from NOVOSENSE, such as NSD1624, NSD1224 and NSI6602V, can better meet the requirements of high power micro-inverters.　　As photovoltaics and energy storage technologies increasingly integrate, the number of household energy storage systems and the capacity of battery energy storage are growing. This creates more opportunities for DC-DC converters. In this setting, NOVOSENSE’s half-bridge driver NSI6602V, and products using CAN interface such as NSI1050 and NCA1042, will play a more important role.
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Release time：2023-10-13 11:37 reading：3180 Continue reading>>
<span style='color:red'>NOVOSENSE</span> NSUC1610: Micro&Special Motor Driver SoC for Automotive-qualified Chips
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NOVOSENSE NSUC1610: Micro&Special Motor Driver SoC for Automotive-qualified Chips

　　As integrated thermal management technology continues its relentless evolution, the quest for enhanced model selection and the platformization of electronic valves and pump components has ushered in an era of single-chip integrated micro&special motor driver System-on-Chips (SoCs). This innovative solution takes the original components, including the MCU, power supply, MOS drive, and LIN communication module, and amalgamates them into a single cohesive package. This integration not only simplifies peripheral circuits but also significantly reduces the need for additional peripheral devices. Furthermore, it fosters standardization of interfaces and control algorithms while simultaneously slashing system costs and elevating reliability to new heights.　　NOVOSENSE NSUC1610 integrates a Cortex M3 processor, power MOSFET and DAC. It supports a 4-wire LIN bus and dual-channel temperature sensor which can be used for power-side over temperature shutdown and low-voltage-side temperature detection inside the chip.　　This highly integrated product NSUC1610 can be used to design small-sized, low power, high-efficiency motor intelligent actuator applications for automotive, include but are not limited to electronic water valves in thermal management systems, air conditioning electronic vents, active air intake grille system actuators (AGS/AGM), seat ventilation brushless direct current motor (BLDC) drives, with light steering headlights (AFS), and more. Rotating/lifting large screen control, automatic charging port and automatic door handle.
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Release time：2023-09-20 13:49 reading：4125 Continue reading>>
<span style='color:red'>NOVOSENSE</span> capacitive isolation technology to easily solve power challenges
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NOVOSENSE capacitive isolation technology to easily solve power challenges

　　All electrical products involve power supply, and the common power supply includes voltage regulated power supply, switching power supply, inverter power supply, variable frequency power supply, and uninterruptible power supply. Most power supplies require isolation devices to ensure equipment and personal safety. Because of the different isolation technology used, the isolation effect is also different. Therefore, the choice of isolation products should promote the advantages and avoid the disadvantages, so as to achieve the best system performance as far as possible.　　I. Why does the power supply need to be isolated　　This is a commonplace problem, and the purpose is to prevent the high voltage of the power supply from endangering the human body. New energy vehicles are a common high-voltage power supply scenario, and the battery voltage is 400V or even 800V; such a high voltage will endanger the human body; another scenario is charging pile, which converts alternating current into high-voltage direct current, and also needs to isolate high and low voltages, which requires the use of isolation devices.　　In addition, power supplies in such applications as photovoltaic, data center server, industrial frequency conversion servo, industrial power modules or energy storage devices require measures taken to avoid the harm of high voltage to the human body, in addition to meeting the corresponding safety requirements.　　　　II. Isolation requirements and classification　　The isolation is subject to strict safety certification, including such common ones as the US’s UL certification, Germany’s VDE certification and IEC certification of the International Electrical Commission. Safety certification includes two types, one is the system level, such as IEC60065, IEC60950, etc., and the other is the device level, such as UL1577 and IEC60747 standards. The IEC standard defines three levels of energy sources from the perspective of safety, all of which are based on the intensity of voltage and current, and the corresponding protection measures are implemented. It is worth mentioning that all of NOVOSENSE's isolation products have passed UL, CUL, VDE and CQC safety certification.　　The isolation chip is widely used in the power system, for example, in vehicle’s OBC/DC-DC system, the input side of high-voltage battery charging is 220V to 380V, and the output side is 400V or 800V; it is 12V to 48V for low-voltage battery charging, which includes PFC and LLC two-stage topologies. The whole system topology is complex, often using two MCUs as the main control, and the communication between the two MCUs needs to be isolated. In addition, the power devices in these topologies, whether Silicon-based MOSFETs or third-generation semiconductor devices, need to be driven and isolated accordingly.　　In addition, according to the control accuracy requirements of the system, the functions of voltage sensing, current sensing and external communication of the system also need to be isolated.　　III. Several common isolation techniques and requirements　　At present, there are three isolation technologies used in the industry: traditional optocoupling, magnetic coupling and capacitive coupling technologies. Traditional optocoupling technology is the most widely used and has the longest history. It uses light as the medium to couple the input signal to the output end, but the volume of the device is large, the transmission speed is slow, the light decay will occur with the growth of the use time, and the operating temperature range is narrow. Magnetic coupling and capacitive coupling are the mainstream isolation technologies. The magnetic coupling has high voltage resistance, fast transmission speed and wide temperature range, but the process is complex with EMI radiation. Capacitive coupling technology has high voltage resistance, fast transmission speed, transmission delay of only twenty or thirty nanoseconds, and a very wide operating temperature range, and the process is not complicated, with high reliability.　　NOVOSENSE's isolation chip is based on capacitive coupling technology, using its patented Adaptive OOK® coding technology, with low EMI radiation and low bit error rate, which can effectively improve the isolation device's ability of common‐mode transient immunity (CMTI).　　Important indicators of isolation products include: isolation voltage rating, CMTI capability, EMC performance, transmission delay and operating temperature, isolation life, etc. The isolation voltage level of NOVOSENSE’s isolation products is up to 10kV, with CMTI of at least 100kV/μs, anti-surge capability of over 10kV, and bilateral ESD capability of over 15kV.　　IV. Power supply system trends and application challenges　　(1) Power system trends　　-High integration: Power systems are moving towards higher integration, so more integrated ICs are also required, such as integrating power supplies and digital isolators together to reduce the complexity of designing isolated power supplies by engineers.　　-High voltage and high frequency: The photovoltaic system has been transferred from 800V to 1500V, the third generation of semiconductors (GaN or SiC) is applied more and more widely, the system switching frequency is getting higher, and the speed is getting faster. Isolation products need to have higher CMTI capabilities, withstand higher voltages, and have better EMI performance.　　-High reliability: Isolation chips need to pass strict safety certification.　　(2) The application challenges of the power supply system　　The application challenge of power system is that the third-generation power device puts forward higher requirements for the driver chip, such as CMTI of greater than 100kV/μs. Due to the higher drive voltage of SiC, the driver output voltage range is required to swing wider. In addition, the product switching rate is faster, and the switching loss is reduced, the driver has the ability to output greater Source or Sink current, the internal rise or fall time is shorter, and the transmission delay is shorter.　　The new function of the SiC driver chip is "Miller clamp". with the SiC switching, the middle point of the bridge arm has a large dv/dt, the low side Cgd capacitor will generate a Miller current; even if the low side is in the OFF state, it will also generate a voltage drop through the low side Rgoff . Considering that the on-threshold of the SiC device is relatively low (about 2V), if the voltage drop is large, the low side will be mistaken turn-on of the low side SiC power transistor, and the system will have the risk of short circuit.　　The "Miller clamp" function addresses this problem in SiC applications. Adding a MOSFET to the chip can directly connect GND to the SiC grid. After the low side is turned off, the low side driver resistance will be skipped and the grid will be directly short-circuited to GND to eliminate the voltage difference caused by Miller current, thus avoiding the risk of mis-connection of the low side caused by Miller effect.　　V. NOVOSENSE isolation products　　NOVOSENSE has a wide range of isolation products, including digital isolators, isolated drivers, isolated voltage/current amplifiers, isolated CAN transceivers. In terms of drivers, whether it is MOS, IGBT or SiC, NOVOSENSE has corresponding isolation products. In terms of sampling, it has both analog output isolated operational amplifier and digital output isolated ADC, which can meet the requirements of sampling rate and sampling accuracy in different application scenarios. In terms of interfaces, NOVOSENSE has a wealth of isolated I2C interfaces, and RS485 or CAN interface products, which can provide a one-stop solution for customers' power supply design.　　Click the link below to view the corresponding technical articles of the product:　　1. Isolated single channel driver with Miller clamp function NSi6601M　　2. 5A dual-channel non-isolated driver NSD1624　　3. Isolated voltage amplifier NSI1312　　The products of NOVOSENSE adopt capacitive coupling technology, which conforms to the current application trend of integrated, high-voltage and reliable power supply, and meets the higher requirements of the third-generation power devices for driver chips. Its isolation product range is very complete, including digital isolators, isolation drivers, isolation voltage/current amplifier, isolated CAN transceivers, providing engineers with a variety of options.
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Release time：2023-08-25 16:12 reading：3963 Continue reading>>
<span style='color:red'>NOVOSENSE</span> launched new 120V half-bridge driver NSD1224 series
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NOVOSENSE launched new 120V half-bridge driver NSD1224 series

　　NOVOSENSE has launched 120V half-bridge driver NSD1224 series, which have 3A/-4A peak driver current capability, are integrated with high-voltage bootstrap diode, and are available in different versions including enabling, interlock and undervoltage protection, as well as various packages including SOP8, HSOP8, DFN10 and DFN8. It is widely used in micro inverter, power optimizer, power module, new energy vehicle and other application scenarios.　　I NSD1224 features:　　l Withstand voltage of VDD power of 20V　　l Withstand voltage at HSpin of -10V to 115V　　l Negative withstand voltage of input pin of -10V　　l HS pin withstand dv/dt up to 50V/nsPeak driver current 3A/-4A　　l Compatible with CMOS/TTL level input　　l Input interlock function　　l Independent UVLO protection for high-side and low-side output　　l Integrated high voltage bootstrap diode　　l Input/output delay of less than 16ns　　l transmission delay matching between high and low sides is less than 1ns　　l DFN10 package with enabling pin for static power consumption as low as 7uA in standby mode　　l Package available in SOP8, HSOP8, DFN10 and DFN8　　l Junction temperature range of -40°C to 150°C　　II NSD1224 performance advantage:　　1. NSD1224 has interlock function, which can effectively avoid shoot through of power satgedue to input interference.　　In the power supply application, the input pin of the half-bridge driver chip is susceptible to interference due to the influence of high-frequency switching noise, which may cause input high at both the high and low sides, resulting in output high at both the high and low sides of the driver chip, cause shoot through of power stage , and damage to the power supply equipment.　　The NSD1224 triggers an interlock mode when both inputs are high levels at the same time, in which case both the high-side and low-side output low at the same time, and only when either input becomes low level will the output return to the normal state following the input. The interlock function of NSD1224 effectively avoids shoot through caused by input signal interference, and improves the reliability of the system.　　2. The input pin of NSD1224 can withstand a negative voltage of -10V, which solves the problem of negative voltage peak in the input of the driver chip.　　In power applications, due to the influence of MOSFET high frequency switches, transient current will be generated in the GND circuit, and there will be parasitic inductance due to the PCB wiring between the controller and the driver. The interaction between the transient current and the parasitic inductance will produce a negative voltage peak in the input pin of the driver chip, resulting in the logic error or even damage of the driver chip. The NSD1224 input pin is improved in respect of the negative withstand voltage, which can be of -10V (recommended working value: -5V), thereby improving the reliability of the chip and lowering the requirements for system design.　　3. NSD1224 with HS pin with a negative withstand voltage of -10V and dv/dt immunity of 50V/ns, applicable for high-frequency and efficient switching power supply applications.　　With the continuous improvement of power efficiency requirements, the switching speed of MOSFET is becoming faster and faster, so as to reduce switching losses. The di/dt and parasitic inductance caused by high-speed switching will generate transient negative voltage in the HS pin, which is likely to cause the driver chip to be locked or even damaged. The HS pin of NSD1224 can withstand negative voltage of -10V (recommended working value: -8V), which effectively solves the application problem of high-frequency and efficient switching power supply. In addition, the HS pin of the NSD1224 can withstand 50V/ns common-mode transients and has strong resistance to common-mode interference.　　NSD1224 is available for sample. For sample application or order, please email to amall@ameya360.com. For more information, click www.ameya360.com
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Release time：2023-08-24 13:30 reading：3724 Continue reading>>

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