Infineon Buys Cold Split Tech Startup Siltectra for $139M

发布时间：2018-11-14 00:00
作者：Ameya360
来源：EE Times
阅读量：850

Infineon Technologies AG has acquired Dresden, Germany-based startup Siltectra to use its cold split technology to split silicon-carbide (SiC) wafers, doubling the number of chips on a wafer. The company was acquired for 124 million euros (about $139 million).

Siltectra was founded in 2010 and has an IP portfolio of more than 50 patents. The startup developed a technology for splitting crystalline materials with minimal loss of material compared to common sawing technologies. This technology can also be applied to SiC, for which rapidly rising demand is expected in coming years.

SiC products are already used today in very efficient and compact solar inverters. In the future, SiC will play a more and more important role in electro-mobility. The cold split technology will be industrialized at the existing Siltectra site in Dresden and at the Infineon site in Villach, Austria. The transfer to volume production is expected to be completed within the next five years.

“This acquisition will help us expand our excellent portfolio with the new material silicon carbide as well,” said Reinhard Ploss, Infineon CEO. “Our system understanding and our unique know-how on thin wafer technology will be ideally complemented by the cold split technology and the innovative capacity of Siltectra.” He said that the higher number of SiC wafers will make the ramp-up of SiC products much easier, especially to address further expansion of renewable energies and the increasing adaptation of SiC for use in the drivetrain of electric vehicles.

Infineon said that the cold split technology will help to secure the supply of SiC products, especially in the long run. Over time, further applications for cold split technology might emerge, such as boule splitting or the use for materials other than silicon carbide.

Early this year, Siltectra announced its patent covering an extension of its silicon-carbide process capability to split materials with sub-100-micron material loss, regardless of vendor-specific SiC crystal-growing processes. Driving down SiC material loss helps accelerate adoption of the substrate for power devices and other ICs. Until now, its cost has inhibited fast adoption. Cost reductions enabled by Siltectra’s technology could speed deployment of SiC for a broader range of applications, including EVs and 5G technology.

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