AnalogySemi Launches Low Temperature Drift, High Performance, Small Package Voltage Reference REF1xx
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AnalogySemi Launches Low Temperature Drift, High Performance, Small Package Voltage Reference REF1xx

　　New Product　　AnalogySemi, an excellent domestic analog and digital analog hybrid chip designer dedicated to providing high-quality chips, has announced the launch of the REF1x/3xx/4xx series of low temperature drift, high-performance, low-power, and small package voltage reference sources. The initial accuracy of this series of products reaches 0.05% and has excellent temperature drift performance. The REF1xx and REF3xx series products have a typical temperature drift value of 5ppm/° C, with a maximum value of 15ppm/° C. The high-performance REF4xx series has a typical temperature drift value of 2ppm/° C, which is the ultimate performance. The working temperature of the REF1xx/3xx/4xx voltage reference source is -40~125 ℃, which is widely used in industries, photovoltaics, automobiles, medical and other fields. Among them, REF3xx, as a universal product, provides a vehicle level version that supports AEC-Q100, providing excellent performance for harsh automotive application scenarios.　　Features　　Excellent temperature drift performance:　　REF1/3XX: typical value 5ppm/° C, maximum value 15ppm/° C, temperature range -40 to 125 ° C　　■ REF4XX: Typical value 2ppm/° C　　● Microencapsulation: SOT23-3, SOT23-6　　High output current: greater than ± 20mA　　High accuracy: 0.05%　　Low static current:　　■ REF1XX：5 μ A　　■ REF3/4XX：50 μ A　　Extreme low voltage difference: 1mV typical value　　0.1Hz-10Hz noise 28 μ Vpp @Output = 2.5V　　Voltage options: 1.25V/1.8V/2.048V/2.5V/3V/3.3V/4.096V/4.5V/5V　　As an indispensable basic circuit module in digital analog systems, voltage reference sources provide precise and stable voltage references for circuit units such as digital to analog converters (DACs), analog-to-digital converters (ADCs), linear regulators, and switching regulators; Directly affects the performance and accuracy of electronic systems. In addition, the voltage reference source can also provide stable bias for sensor chips such as pressure bridges, thermal resistors, and MEMS. Analogous to the REF1/3/4xx series voltage reference source launched by semiconductors, it has characteristics such as high precision, micro power consumption, low voltage difference, and achieves high-performance performance of ultra-low temperature drift on the basis of small packages of SOT23-3 and SOT23-6, thereby helping the system achieve reliable stability under various variable temperatures and voltages.　　he REF1xx series products have as low as 5 μ The extremely low static current of A greatly reduces power consumption and prolongs battery life. It is suitable for industrial transmitters or battery powered data acquisition systems, providing high-precision reference sources while also extending the operating time of the power supply battery. The REF3xx series is a universal reference source product that can be widely used in industries such as industrial instruments, testing and measurement equipment, and medical equipment, helping to achieve high-precision front-end data collection within the system. The REF4xx series products have lower temperature drift characteristics (2ppm/℃) and can be applied to scientific instruments, semiconductor testers, exploration instruments, and clinical medical devices with higher precision requirements.　　AnalogySemi The REF1x/3xx/4xx series voltage reference sources all provide a small package of SOT23-3; In addition, the REF3xx series also offers SOT23-6 packaging types with NR pin, enable pin, and output Sense pin functions. The enable pin is used to turn off devices to save power, the output Sense pin can be used to provide more accurate voltage values for high-load applications, and the NR pin is used to connect capacitors to achieve noise reduction.
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Release time：2023-08-23 10:58 reading：2282 Continue reading>>
ROHM’s New Automotive-Grade High Voltage Hall ICs
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ROHM’s New Automotive-Grade High Voltage Hall ICs

　　ROHM has developed Hall ICs, the BD5310xG-CZ / BD5410xG-CZ series, designed for automotive applications requiring magnetic detection.　　In recent years, the continuing computerization of vehicle systems to meet the demand for increasing electrification and functionality along with greater comfort and safety has required additional ECUs (Electronic Control Units) and sensors to provide control.　　Among these sensors, Hall ICs are becoming one of the most adopted type due to their ability to detect position and motor rotation in a non-contact manner that reduces the wear-and-tear prevalent with mechanical switches while also being compact and can be equipped with protection circuits.　　ROHM has developed Hall ICs for automotive applications that improve reliability by combining Hall IC expertise cultivated over many years for the mobile and consumer sectors with original high withstand voltage processes. As a result, the BD5310xG-CZ / BD5410xG-CZ series features an industry-leading 42V withstand voltage that enables direct connection to a primary (12V battery) power supply. This contributes to improved reliability under battery power, which can fluctuate rapidly depending on the operating conditions. At the same time, a wide operating supply voltage range of 2.7V to 38V enables support for a variety of applications. The unique internal topology also reduces power consumption by approx. 20% over general products to achieve an industry-leading current consumption of 1.9mA. Both series comply with the AEC-Q100 (Grade 1) automotive reliability standard while incorporating multiple protection circuits required for vehicle systems.　　The BD5310xG-CZ series is a unipolar detection type while the BD5410xG-CZ series provides latch-type detection, giving designers the flexibility to select the ideal product based on set needs. A total of 11 models are offered in detection magnetic flux densities - ranging from 2.0mT to 28.0mT. Unipolar detection can be used for detecting position in applications such as door open/close and door locks, whereas latch detection is ideal for rotation detection in various motors used in power windows, sliding doors, and the like.　　Going forward, ROHM will continue to expand its lineup of sensor ICs that contribute to higher reliability and functionality in automotive applications.
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Release time：2023-08-23 10:11 reading：2884 Continue reading>>
Mechanical force to control thermoelectric <span style='color:red'>voltage</span>
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Mechanical force to control thermoelectric voltage

　　The magnitude and sign of the thermoelectric voltage across atomic-scale gold junctions can be controlled by applying a mechanical strain to deform the contact minutely and accurately while the structure of the surrounding material remains unaffected,say researchers from Tokyo Institute of Technology.　　The thermoelectric effect–a voltage difference created across a junction of two wires held at different temperatures–has been used in various applications such as thermoelectric power generators,thermoelectric refrigerators,and temperature measurement.　　When the cross section of the junction contact is reduced to a few atoms,quantum interferences among electrons affect the transport of electrons across the junction.These interferences are strongly dependent on the structure,including minute defects,of the atomic-scale contact and surrounding material,which determine electrical properties such as conductance and thermoelectric voltage.　　So far,quantum interference effect in atomic-scale metal contacts has not found much application,because of the difficulty in precisely controlling atomic structures.　　In this study,minute deformations were performed through bending of the junction's substrate by using a piezoelectric transducer and by maintaining a low temperature environment so that the atoms did not gain sufficient kinetic energy to vibrate strongly and cause random deformations of the structure.　　As the contact was elongated,the conductance decreased in a step-wise manner,and the thermoelectric voltage varied sharply with changes in sign.According to the researchers,the electrical properties were restored to their initial values when the contact was compressed back to its initial structure.　　A suitable range of elongation that causes a step-like change in conductance with a change in sign of the thermoelectric voltage was used to create a voltage switch.　　According to the research team,this is the first report of successful manipulation of quantum interference of electrons in metal nanostructures through external mechanical force.Potential applications include thermopower generation,measurement techniques in materials science,and solid-state electronic devices.
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Release time：2017-08-31 00:00 reading：2251 Continue reading>>

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