Leading Performance for High Voltage Applications: NOVOSENSE Launches the NSI67X0 Series of Smart Isolated Drivers
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Leading Performance for High Voltage Applications: NOVOSENSE Launches the NSI67X0 Series of Smart Isolated Drivers

　　NOVOSENSE has officially launched the NSI67X0 series of smart isolated drivers with Isolated Analog Sensing function. Suitable for driving power devices such as SiC, IGBTs and MOSFETs, and available in both automotive (AEC-Q100 compliant) and industrial variants, this series can be widely used in new energy vehicles, air conditioners, power supplies, photovoltaics and other applications.　　This series of isolated gate drivers equates an isolated analog to PWM sensor, which can be used for temperature or voltage detection. The design further enhances driver versatility, simplifies system design, effectively reduces system size and lowers overall cost.　　High-voltage Drive and Ultra-high Common-mode Immunity　　Designed to drive IGBTs or SiC up to 2121V DC operating voltage, NSI67X0 offers advanced protection functions, excellent dynamic performance, and outstanding robustness. This series uses SiO2 capacitor isolation technology to isolate the input side from the output side, providing ultra-high common-mode immunity (CMTI>150kV/μs) while ensuring extremely small offset between devices, which is at the leading level in the industry.　　Powerful Output Capability and Miniaturized Package　　The NSI67X0 series has powerful output capability, supporting ±10A drive current and a maximum output drive voltage of 36V, far exceeding most similar products. Its SOW16 package design further enhances safety by achieving a creepage distance of more than 8mm while maintaining miniaturization.　　Comprehensive Protection Functions and Automotive Certification　　With comprehensive protection functions, including fast overcurrent protection, short-circuit protection, fault soft turn off, 4.5A Miller clamp, and undervoltage protection, this series is a reliable choice for driving power devices such as IGBTs. The entire product family meets the AEC-Q100 standard for automotive applications and can be widely used in new energy vehicles, industrial control and energy management.　　Features of NSI67X0 Series　　◆ Smart isolation drivers up to 2121Vpk for driving SiC and IGBTs　　◆ High CMTI: 150 kV/μs　　◆ Input side supply voltage: 3V ~ 5.5V　　◆ Driver side supply voltage: up to 32V　　◆ Rail-to-rail output　　◆ Peak source and sink current: ±10A　　◆ Typical propagation delay: 90ns　　◆ Operating ambient temperature: -40°C ~ +125°C　　◆ Compliant with AEC-Q100 for automotive applications　　◆ RoHS compliant package type: SOW16, creepage distance > 8mm　　Protection Functions　　◆ Fast over-current and short-circuit protection, with optional DESAT threshold voltage of 9V and 6.5V and OC threshold voltage of 0.7V　　◆ Integrated soft turn off function in case of fault, with optional soft turn off current of 400mA and 900mA　　◆ Integrated Miller clamp function, with clamp current up to 4.5A　　◆ Independent undervoltage protection UVLO on both HV and LV sides　　◆ Fault alarm (FLT/RDY pin indication)　　Isolated Analog Sampling Function　　◆ Isolated analog sampling function　　◆ AIN input voltage range: 0.2V ~ 4.7V　　◆ APWM output duty cycle: 96% ~ 6%　　◆ Duty cycle accuracy: 1.6%　　◆ APWM output frequency: 10kHz　　◆ Optional AIN integrated constant current source output　　Safety Related Certification　　◆ UL Certification: 1 minute 5700Vrms　　◆ VDE Certification: DIN VDE V 0884-11:2017-01　　◆ CSA Certification: Approved under CSA Component Acceptance Notice 5A　　◆ CQC Certification: Compliant with GB4943.1-2011　　Introduction to Principle of High-precision Temperature Sampling of NSI67X0 Series　　The AIN interface of the NSI6730 has a built-in 200uA current source. When an external NTC is connected, a voltage drop will be generated and demodulated into a 10kHz PWM signal for isolated output. The PWM signal is captured by the processor MCU, and the corresponding voltage value and temperature are obtained by calculating the duty cycle.　　When the AIN voltage is in the range of 0.2V ~ 4.7V, the AIN input voltage and APWM output duty cycle are linearly related. When the AIN voltage is converted to a PWM signal, the PWM duty cycle conforms to the following formula:　　That is, the AIN voltage of 0.2V ~ 4.7V corresponds to a PWM duty cycle of 96% ~ 6%.　　Model Selection Chart of NSI67X0 Series　　This series offers a variety of models to meet the needs of different applications. Specifically, in the NSI67X0 series, when X is 3, the AIN interface integrates a constant current source; when X is 7, the AIN interface does not integrate a constant current source.
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Release time：2025-02-24 16:18 reading：548 Continue reading>>
ROHM’s New SiC Schottky Barrier Diodes for High Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance
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ROHM’s New SiC Schottky Barrier Diodes for High Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance

　　ROHM has developed surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models - SCS2xxxNHR - for automotive applications such as onboard chargers (OBCs), with plans to deploy eight models - SCS2xxxN - for industrial equipment such as FA devices and PV inverters in December 2024.　　The rapidly expanding xEV market is driving the demand for power semiconductors, among them SiC SBDs, that provide low heat generation along with high-speed switching and high-voltage capabilities in applications such as onboard chargers. Additionally, manufacturers increasingly rely on compact surface mount devices (SMDs) compatible with automated assembly equipment to boost manufacturing efficiency. Compact SMDs tend to typically feature smaller creepage distances, fact that makes high-voltage tracking prevention a critical design challenge.　　As leading SiC supplier, ROHM has been working to develop high-performance SiC SBDs that offer breakdown voltages suitable for high-voltage applications with ease of mounting. Adopting an optimized package shape, it achieves a minimum creepage distance of 5.1mm, improving insulation performance when contrasted with standard products.　　The new products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1mm, approx. 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing an easy replacement on existing circuit boards.　　Two voltage ratings are offered, 650V and 1200V, supporting 400V systems commonly used in xEVs as well as higher voltage systems expected to gain wider adoption in the future. The automotive-grade SCS2xxxNHR are AEC-Q101 qualified, ensuring they meet the high reliability standards this application sector demands.　　Going forward, ROHM will continue to develop high-voltage SBDs using SiC, contributing to low energy consumption and high efficiency requirements in automotive and industrial equipment by providing optimal power devices that meet market needs.　　Application Examples◇ Automotive applications: Onboard chargers (OBCs), DC-DC converters, etc.　　◇ Industrial Equipment: AC servo motors for industrial robots, PV inverters, power conditioners, uninterruptible power supplies (UPS), and more　　Online Sales InformationAvailability: The SCS2xxxxNHR for automotive applications are available now.　　The SCS2xxxN for industrial equipment are scheduled in December 2024.　　Pricing: $10.50/unit (samples, excluding tax)　　Online Distributors: DigiKey™, Mouser™ and Farnell™　　The products will be offered at other online distributors as they become available.　　EcoSiC™ BrandEcoSiC™ is a brand of devices that leverage silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　TerminologyCreepage Distance　　The shortest distance between two conductive elements (terminals) along the surface of the device package. In semiconductor design, insulation measures with such creepage and clearance distances must be taken to prevent electric shocks, leakage currents, and short-circuits in semiconductor products.　　Tracking (Creepage Discharge)　　A phenomenon where discharge occurs along the surface of the package (insulator) when high voltage is applied to the conductive terminals. This can create an unintended conductive path between patterns, potentially leading to dielectric breakdown of the device. Package miniaturization increases the risk of tracking by reducing creepage distance.　　Resin Potting　　The process of encapsulating the device body and the electrode connections between the device and circuit with resin, such as epoxy, to provide electrical insulation. This provides durability and weather resistance by protecting against water, dust, and other environmental conditions.　　AEC-Q101 Automotive Reliability Standard　　AEC stands for Automotive Electronics Council, a reliability standard for automotive electronic components established by major automotive manufacturers and US electronic component makers. Q101 is a standard that specifically applies to discrete semiconductor products (i.e. transistors, diodes).
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Release time：2024-11-20 14:00 reading：423 Continue reading>>
Renesas Introduces Power Management with Voltage Monitoring Solution for Space-Grade AMD Versal AI Edge Adaptive SoC
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Renesas Introduces Power Management with Voltage Monitoring Solution for Space-Grade AMD Versal AI Edge Adaptive SoC

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced a complete space-ready reference design for the AMD Versal™ AI Edge XQRVE2302 Adaptive SOC. Developed in collaboration with AMD, the ISLVERSALDEMO3Z power management reference design integrates key space-grade components for power management. It targets the cost-effective AI Edge with both rad-hard & rad-tolerant plastic solutions specifically designed to support a wide range of power rails for next-generation space avionics systems that demand tight voltage tolerances, high current, and efficient power conversion.　　The new ISLVERSALDEMO3Z power management reference design is fully qualified, enabling easy integration into satellite payload architectures. It includes a PMBus interface, giving users control of fault behaviors, protection levels and output regulation voltage. The new reference design also offers telemetry readouts of internal signals for system diagnostics. It is the industry’s only space-qualified power management system with a digital wrapper to optimize information transmission. The core power solution of this reference design is easily scalable with regard to output power, optimizing customers’ investments in design and qualification over time.　　As the number of Low-Earth Orbit (LEO) satellites increases, the need for lower cost space-grade systems is growing rapidly. Customers traditionally concerned with minimizing SWaP (Size, Weight and Power consumption) are now interested in reducing cost as well (SWaP-C). Renesas’ new ISLVERSALDEMO3Z power management reference design optimally addresses all of these factors. Space-grade plastic components decrease size, weight and cost while wide-bandgap GaN FETs enable the highest efficiency power conversion.　　The new Versal AI Edge Adaptive SoC converts raw sensor data into useful information, making the XQRVE2302 ideal for anomaly and image detection applications. It has a nearly 75% smaller board area and power savings over the previous-generation XQRVC1902. It also integrates the enhanced AMD AI Engine (AIE) technology, known as AIE-ML, which has been optimized for machine learning (ML) applications. Unlike competitive offerings, it supports unlimited reprogramming.　　“We’re proud to team with AMD to deliver this advanced solution that addresses the most pressing concerns of space customers,” said Josh Broline, Sr. Director, Marketing and Applications of the HiRel Business Division at Renesas. “Along with our hallmark power management expertise, this reference design meets SWaP-C objectives, enables real-time system monitoring and control, and unlocks the power of AI.”　　“The Versal™ AI Edge XQRVE2302 Adaptive SOC delivers unprecedented features and performance for the rapidly growing space market,” said Minal Sawant, senior director, Aerospace & Defense Vertical Market, AMD. “We’re pleased that Renesas offers advanced power management functionality that enables our customers to take full advantage of this solution.”　　Renesas’ new ISLVERSALDEMO3Z power management reference design comes with power management devices that have been tested and verified to withstand exposure to high levels of radiation. These include Pulse Width Modulation (PWM) controllers, GaN FET half-bridge drivers, point-of-load (POL) regulators, and power sequencers. The devices come in small-footprint packages, so the core power rail components take up just 67 square centimeters of board area.　　Also, the ISLVERSALDEMO3Z mates seamlessly with the ISL71148VMREFEV1Z voltage monitor reference design with 14-bit resolution to accurately monitor all 11 core power rails of the Versal AI Edge Adaptive SOC. The high resolution enables reliable system health monitoring. It includes a “dual-footprint” to accommodate both space plastic and rad-hard hermetic solutions.
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Release time：2024-07-19 14:24 reading：1091 Continue reading>>
NOVOSENSE Introduces New Solid State Relays: Supporting 1700V Withstand Voltages and Meeting CISPR25 Class 5 Requirements
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NOVOSENSE Introduces New Solid State Relays: Supporting 1700V Withstand Voltages and Meeting CISPR25 Class 5 Requirements

　　Building on its long history in isolation technology, NOVOSENSE today announced the launch of its new NSI7258 series of capacitive isolation-based solid state relays, available in both industrial and automotive grades. Designed specifically for high-voltage measurement and insulation monitoring, NSI7258 provides industry-leading voltage withstand capability and EMI performance to help improve the reliability and stability of high-voltage systems such as industrial BMS, PV, energy storage, charging piles, and BMS and OBCs for new energy vehicles.　　Integrated SiC MOSFETs, supporting 1700V withstand voltages　　High-voltage systems are becoming increasingly prevalent in both the industrial and automotive sectors. In order to match the trend of high-voltage industrial and automotive platforms, NSI7258 integrates two SiC MOSFETs developed with NOVOSENSE's participation in a back-to-back format, each supporting up to 1700V withstand voltages; in the standard 1-minute avalanche test, NSI7258 withstands an avalanche voltage of 2100V and an avalanche current of 1mA, achieving industry-leading voltage and avalanche resistance. At the same time, under the test conditions of 1000V high voltage and 125°C high temperature, the leakage current of NSI7258 can be controlled within 1μA, which greatly improves the insulation impedance and detection accuracy of the battery pack in the BMS and enables safer human-machine interaction.　　Compliance with various safety requirements, reducing system verification time　　The popularity of high-voltage applications requires compliance with various stringent safety requirements. With NOVOSENSE's proprietary technology, NSI7258 achieves industry-leading creepage distance of 5.91mm on the secondary side and 8mm on the primary side in a SOW12 package, which meets the requirements of IEC60649 formulated by the International Electrotechnical Commission (IEC). In addition, with NOVOSENSE's superior capacitive isolation technology, NSI7258's voltage withstand capability is up to 5kVrms, which fully meets the relevant UL, CQC and VDE certifications, reducing customers' system verification time and accelerating the product-to-market process.　　Significant EMI optimization, accelerating optocoupler relay replacement　　Traditional optocoupler relay solutions suffer from light decay problems and their performance degrades over time, but the advantage of optocoupler relays is that they have no EMI problems, which is one of the important factors limiting optocoupler replacement in high-voltage systems. NOVOSENSE's NSI7258 is cleverly designed to achieve industry-leading EMI performance, easily passing the CISPR25 Class 5 test without magnetic beads on the single board and leaving sufficient margin in the full-band test. NSI7258 is produced based on an all-semiconductor process for higher reliability in long-term use. Superior EMI performance and increased reliability allow customers to use multiple devices in the system at the same time without being affected, significantly reducing design difficulty and enabling customers to accelerate optocoupler replacement in system designs.
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Release time：2024-05-20 15:39 reading：1793 Continue reading>>
3PEAK Launches Wide Input Voltage Buck TPP36308, Supporting Multiple Topologies!
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3PEAK Launches Wide Input Voltage Buck TPP36308, Supporting Multiple Topologies!

　　3PEAK (stock code: 688536), a semiconductor company specializing in high-performance analog chips and embedded processors, has introduced its new wide input voltage buck product, TPP36308. The key advantages of the TPP36308 include a wide input voltage range of 4.5 V to 36 V, a continuous output current of 3 A, a selectable operating frequency, and light-load modes. The product is versatile, suitable for application in photovoltaic inverters, servo drives, security monitoring, building intelligence, smart home appliances, and industrial automation.　　TPP36308 Efficiency Test　　In industrial applications where the overall power consumption of the circuit design is crucial, TPP363080 demonstrates exceptional efficiency. Operating under conditions from 12 V to 5 V with an output range of 10 mA to 3 A, it consistently achieves efficiencies above 90%, peaking at 96%. This meets customer demands for high efficiency under various load conditions.　　TPP36308 Temperature Rise Test　　TPP36308 features a high-power density and compact TSOT23-6 package (2.90 mm × 1.60 mm) and can replace products in SOP-8 and TO-220 packages in low-power applications. This allows customers to save on-board space, aligning with the trend towards smaller product designs. Under test conditions with a 25°C ambient temperature, 12-V/24-V input, and 5-V@1.5-A output, the chip case temperatures were 43°C and 48.7°C, respectively.　　TPP36308 Application Recommendations　　TPP36308 has already been widely used in photovoltaic inverters and robotic vacuum cleaners. 3PEAK provides comprehensive power solution offerings for these applications.　　Auxiliary Power Control Board Power Solution for a Photovoltaic Inverter　　TPP36308 Multiple Topology Schemes　　To cater to a broader range of applications, 3PEAK also offers TPP36308 in topologies beyond the classic buck. These include inverting buck-boost, ISO-buck, and flyback, and 3PEAK can recommend specific peripheral parameters based on customer applications. Typical application circuits are as follows:
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Release time：2024-03-01 13:06 reading：3269 Continue reading>>
ROHM’s New SBDs: Achieving Class-Leading* Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off
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ROHM’s New SBDs: Achieving Class-Leading* Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off

　　ROHM has developed 100V breakdown Schottky barrier diodes (SBDs) that deliver industry-leading reverse recovery time (trr) for power supply and protection circuits in automotive, industrial, and consumer applications.　　Although numerous types of diodes exist, highly efficient SBDs are increasingly being used inside a variety of applications. Particularly SBDs with a trench MOS structure that provide lower VF than planar types enable higher efficiency in rectification applications. One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies - resulting in higher power loss when used for switching.　　In response, ROHM developed a new series utilizing a proprietary trench MOS structure that simultaneously reduces both VF and IR (which are in a trade-off relationship) while also achieving class-leading trr.　　Expanding on the four existing conventional SBD lineups optimized for a variety of requirements, the YQ series is ROHM’s first to adopt a trench MOS structure. The proprietary design achieves class-leading trr of 15ns that reduces trr loss by approx. 37% and overall switching loss by approx. 26% over general trench-type MOS products, contributing to lower application power consumption. The new structure also improves both VF and IR loss compared to conventional planar type SBDs. This results in lower power loss when used in forward bias applications such as rectification, while also providing less risk of thermal runaway which is a major concern with SBDs. As such, they are ideal for sets requiring high-speed switching, such as drive circuits for automotive LED headlamps and DC-DC converters in xEVs that are prone to generate heat.　　Going forward, ROHM will strive to further improve the quality of its semiconductor devices, from low to high voltages, while strengthening its expansive lineup to further reduce power consumption and achieve greater miniaturization.　　SBD Trench MOS StructureThe trench MOS structure is created by forming a trench using polysilicon in the epitaxial wafer layer to mitigate electric field concentration. This reduces the resistance of the epitaxial wafer layer, achieving lower VF when applying voltage in the forward direction. At the same time, during reverse bias the electric field concentration is minimized, significantly decreasing IR. As a result, the YQ series improves VF and IR by approx. 7% and 82%, respectively, compared to conventional products.　　And unlike with typical trench MOS structures where trr is worse than planar types due to larger parasitic capacitance (resistance component in the device), the YQ series achieves an industry-leading trr of 15ns by adopting a unique structural design. This allows switching losses to be reduced by approx. 26%, contributing to lower application power consumption.　　Application Examples• Automotive LED headlamps • xEV DC-DC converters • Power supplies for industrial equipment　　• Lighting　　☆: Under development　　* The TO-277GE package products released and sold by online distributors this time are rated for car infotainment and body systems. For each part number, we are preparing grades that can be installed in powertrains, etc. (using the same part number), with mass production scheduled to start in September 2024. (The packaging symbol after the above part numbers will differ)　　Product Page and Related InformationApplication notes highlighting the advantages of these new products in circuits along with a white paper that showcases the features of each SBD series are available on ROHM's website. An SBD page is also available that allows users to narrow down product options by entering voltage conditions and other parameters, facilitating the selection process during design. Click on the URLs below for more information.　　■ ROHM SBD Product Page　　https://www.rohm.com/products/diodes/schottky-barrier-diodes　　■ Application Notes　　Advantages of YQ Series: Compact and Highly Power Conversion Efficiency Schottky Barrier Diodes for Automotive　https://fscdn.rohm.com/en/products/databook/applinote/discrete/diodes/yq_sbd_automotive_an-e.pdf　　■ White Paper　　ROHM's SBD Lineup Contributes to Greater Miniaturization and Lower Loss in Automotive, Industrial, and Consumer Equipment　　https://fscdn.rohm.com/en/products/databook/white_paper/discrete/diodes/sbd_lineup_wp-e.pdf　　Online Sales Information　　Applicable Part Nos: Refer to the above table.　　Availability: December 2023　　Pricing: $2,5/unit (samples, excluding tax)　　The products will be sold at other online distributors as well.　　Terminologytrr (Reverse Recovery Time)　　The time it takes for the switching diode to switch from the ON state to completely OFF. The lower this value is, the smaller the switching losses.　　Forward Voltage (VF)　　A voltage drop that occurs when electricity flows in the forward direction from + to -. The lower this value is, the higher the efficiency.　　Reverse Current (IR)　　Reverse current generated when reverse voltage is applied. The lower this value is, the smaller the power consumption (reverse power loss).　　Thermal Runaway　　When a diode is conducted in the reverse direction, heat generated within the chip may exceed the heat dissipation of the package, causing IR to increase and eventually lead to destruction, - a phenomenon called thermal runaway. For SBDs with high IR values, thermal runaway is especially likely to occur, so care must be taken when designing circuits.
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Release time：2024-02-20 11:26 reading：1907 Continue reading>>
What is a transient <span style='color:red'>voltage</span> suppressor?
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What is a transient voltage suppressor?

　　Transitory Voltage Suppressors (TVS diodes) assume a vital function in shielding electronic circuits from the harmful impacts of abrupt voltage spikes and surges. In a globe teeming with electronic gadgets, the susceptibility of these constituents to unforeseen voltage fluctuations mandates the application of potent protective strategies.　　Here is where TVS diodes enter the scene, furnishing a distinct remedy for swift reaction and formidable surge-handling capabilities. The objective of this preamble is to scrutinize the importance of Transient Voltage Suppressors, their distinction from Zener diodes, and the ideal positioning within circuits to guarantee stalwart suppression of transient voltage.　　What is a transient voltage suppressor?　　A safeguarding apparatus, termed Transient Voltage Suppressors (TVS), is contrived to restrict transient voltage spikes and surges within electrical circuits. These surges, frequently induced by occurrences like lightning strikes, fluctuations in the power grid, or electromagnetic pulses, possess the capability to harm or diminish electronic constituents.　　The TVS establishes a path of low impedance for surplus voltage, rerouting it away from components susceptible to damage, thus averting potential harm. The mechanism reacts swiftly to voltage transients, returning to a state of high impedance once the transient event wanes, facilitating the resumption of regular operation.　　The indispensability of transient voltage suppressor devices is underscored in various applications, as they are instrumental in shielding electronic circuits from the deleterious consequences of voltage fluctuations.　　What are the different types of transient voltage suppressors?　　Various sorts of devices exist for the purpose of transient voltage suppression, each possessing distinct attributes. The primary classifications encompass:　　● Metal Oxide Varistors (MOVs): These resistors, voltage-dependent in nature, exhibit a nonlinear response to alterations in voltage. Commonly applied for the safeguarding against transient bursts of high energy.　　● Silicon Avalanche Diodes (SADs): These semiconductor contrivances leverage the avalanche breakdown effect to manage transitory voltage surges.　　● Transient Voltage Suppression (TVS) Diodes: Engineered as specialized diodes intended for the protection against transient voltage, these can rely on technologies such as avalanche breakdown, zener breakdown, or silicon-controlled rectifiers.　　● Gas Discharge Tubes (GDTs): Containing minute amounts of gas, GDTs undergo ionization when exposed to elevated voltage, fabricating a path of low impedance for transient currents.　　● Zener Diodes: Although their primary application pertains to voltage regulation, zener diodes, by virtue of their breakdown characteristics, can also furnish a measure of transient voltage suppression.　　What are the advantages and disadvantages of TVS diode?　　Advantages　　•Swift Responsiveness: TVS diodes exhibit rapid response times, ensuring prompt safeguarding against abrupt occurrences.　　•Robust Surge Accommodation: They possess the capability to manage formidable surge currents and energy magnitudes, rendering them apt for resilient transient security.　　•Petite Dimensions: Generally modest in size, Transient Voltage Suppressor (TVS diodes) can be assimilated into electronic circuits without engrossing excessive spatial volume.　　•Prolonged Operational Lifespan: When adequately dimensioned and employed, TVS diodes can boast an extended operational existence, furnishing sustained protection over extended durations.　　Disadvantages　　•Constrained Energy Assimilation Capacity: Despite their efficacy in handling transient incidents, TVS diodes may exhibit limited capacity for energy assimilation when juxtaposed with certain alternative Transient Voltage Suppressors such as MOVs.　　•Voltage Clamping Strain: The clamping function of TVS diodes might impose stress on the circuit under protection, conceivably impacting the comprehensive system.　　What is the purpose of a transient voltage suppressor?　　The fundamental objective of a device known as Transient Voltage Suppressors is safeguarding electronic elements and circuits from transient occurrences of voltage surges and spikes. These transients may emanate from diverse origins like occurrences of lightning, fluctuations in power, or interference of an electromagnetic nature. If allowed to unfold without restraint, these surges in voltage hold the potential to inflict harm or deterioration upon delicate electronic apparatuses.　　The mechanism of the transient voltage suppressor serves as a safety precaution by establishing a path of low impedance for surplus voltage. This path steers the excess away from components of heightened sensitivity, averting potential harm. By doing so, it contributes to the preservation of the soundness and dependability of electronic systems through the suppression of transient episodes.　　What is the failure mode of a transient voltage suppressor?　　A prevailing malfunction pattern observed in Transient Voltage Suppressors involves the occurrence of a short circuit. Upon encountering a transient of elevated voltage, the suppressor transitions into a state characterized by low impedance, thereby effectively creating a short circuit linked to the ground. Although this maneuver shields the interconnected devices from the undue voltage, it bears the consequence of potential malfunction in the suppressor. During the state of short circuit, the TVS device may forfeit its ability to furnish adequate protection, necessitating potential replacement for the restoration of its operational capacity.　　How does a transient voltage suppressor work?　　A method employed by Transient Voltage Suppressors involves the creation of a path of low impedance to accommodate surplus voltage during the occurrence of a transient event. The process unfolds in a sequential manner:　　1.In the standby state, under regular operating conditions, the transient voltage suppressor maintains a state of high impedance, enabling the circuit to operate without disruption.　　2.In the event of a transient occurrence, wherein a surge in voltage across the circuit transpires.　　3.The TVS device promptly reacts to the escalating voltage. The nature of this response hinges on the specific type of TVS, potentially involving mechanisms like avalanche breakdown or zener breakdown to transition into a state of low impedance.　　4.While in the low-impedance state, the TVS establishes a route with minimal resistance for the surplus voltage, effectively diverting transient energy away from components of heightened sensitivity that necessitate protection.　　5.Employing a voltage clamping mechanism, the Transient Voltage Suppressors regulates the voltage across the circuit by fixing it at a predetermined level. This measure ensures that the protected components remain shielded from voltages surpassing their designated ratings.　　6.Following the subsiding of the transient event, the TVS device reverts to its state of high impedance, thereby facilitating the resumption of regular circuit operation.　　Which diode is used for transient voltage suppression?　　In the matter of suppressing transient voltage, the prevailing practice involves the utilization of a distinct diode category recognized as Transient Voltage Suppressors. These diodes, operating under the designation TVS, are crafted with precision to manage instances of transient voltage spikes and surges. Noteworthy attributes encompass swift response times and formidable surge-handling capabilities, rendering them efficacious in the fortification of electronic circuits against the conceivable adversities stemming from the presence of voltage transients.　　What is the difference between TVS diode and Zener diode?　　In the realm of diodes utilized for voltage regulation, both TVS diodes and Zener diodes are present, each fulfilling distinct roles concerning the suppression of transient voltage. TVS diodes undergo specific engineering to swiftly clamp transient voltages, ensuring a rapid and efficient counteraction to voltage spikes.　　Frequently, they employ mechanisms such as avalanche breakdown or silicon-controlled rectifiers to manage transients characterized by high energy levels. In contrast, Zener diodes find their primary design focus in voltage regulation, exhibiting a response time comparatively slower than that of Transient Voltage Suppressor. Their breakdown mechanism tends to be less abrupt, rendering them less apt for expeditious transient suppression.　　Where do you put a TV diode?　　In electronic circuits, the placement strategy for transient voltage suppressor (TVS) diodes is pivotal when safeguarding against transient voltage spikes. Crucial sites encompass input and output ports, power supply lines, as well as signal lines. The strategic arrangement of TVS diodes at these junctures guarantees the interception of any transient voltage spike prior to its interaction with sensitive components, thereby shielding the circuit from potential harm. Prudent choices in the selection and installation of TVS diodes hold paramount importance to optimize their efficacy in alleviating the repercussions of transient events on electronic systems.
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Release time：2023-11-15 10:53 reading：1369 Continue reading>>
What is DC Voltage? What is the Difference Between DC and AC?
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What is DC Voltage? What is the Difference Between DC and AC?

　　Direct current (DC) voltage is an essential concept for anyone working with electrical circuits or devices.　　This guide provides a comprehensive overview of what DC voltage is, how it compares to alternating current (AC), methods for generating and converting it, how to measure it, and key safety considerations when handling DC power.　　What is DC Voltage?　　DC voltage, also known as direct current voltage, refers to an unchanging, constant voltage level. DC power sources provide a consistent one-directional flow of electric charge from positive to negative. This stable one-way current maintains a steady voltage.　　In contrast, alternating current (AC) voltage oscillates back and forth. The voltage level of AC power fluctuates in a sine wave pattern, reaching both positive and negative values cyclically. But DC voltage remains at the same constant magnitude and polarity over time.　　Some key characteristics of DC voltage:　　– Unidirectional current flows from positive to negative terminal.　　– Consistent, non-fluctuating voltage level.　　– Used for charging batteries, operating electronics, and more.　　What is the Difference Between DC and AC?　　While both direct and alternating current transmit energy, there are important differences between DC and AC that inform their distinct uses:　　Direction of Flow　　●DC involves current flowing in one direction from positive to negative. The voltage polarity remains fixed.　　●AC alternates directions, switching polarity from positive to negative in cycles. The voltage level also fluctuates.　　Waveform　　●The waveform of DC is a straight, constant line representing steady, unchanging voltage.　　●AC forms a sinusoidal waveform as voltage oscillates between positive and negative peaks symmetrically in cycles.　　Generating DC vs AC　　●DC can be generated through batteries, solar cells, fuel cells, rectifiers and more. Chemical reactions or electromagnetic fields produce consistent unidirectional currents.　　●AC is commonly produced by rotating electromagnetic generators. The spinning magnetic fields induce oscillating bidirectional voltage.　　Applications　　●DC is commonly used for electronics, charging batteries, and low-voltage systems due to its stability.　　●AC is preferred for high-voltage power transmission and motor systems since it can be stepped up or down easily using transformers.　　Measurement　　●DC voltage can be measured directly using a multimeter set to the appropriate range.　　●AC voltage is typically measured by converting to root mean squared (RMS) value to account for the sinusoidal fluctuations.　　How DC Voltage is Generated?　　There are a variety of methods used to generate a steady DC voltage:　　Batteries　　Batteries contain two terminals, positive (cathode) and negative (anode). Electrochemical reactions between the anode, cathode, and electrolyte generate a consistent DC voltage from the battery until it discharges. Common battery types include alkaline, lithium-ion, lead-acid, and more.　　Solar Cells　　Photovoltaic solar cells contain positive and negative semiconductor layers. When solar radiation hits the junction between them, the absorbed photons knock electrons loose, causing a directional DC current flow and steady DC voltage between the terminals.　　Thermocouples　　Thermocouples contain two conductive materials joined at one end. Heating the joined junction causes a voltage differential between the two metals. The flow of electrons from the higher voltage to the lower voltage terminal produces DC voltage.　　AC to DC Rectifiers　　Rectifiers convert AC to DC using diodes or transistors to filter the negative voltage portions of the AC waveform. What remains is a unidirectional pulsing DC that can be smoothed into a steady DC with capacitors.　　Brushless DC Generators　　In generators, electromagnetic induction from spinning rotors and stators produces an oscillating voltage. Commutators or rectifiers convert the AC wave into steady DC voltage. Generators scale well for large DC power supply systems.　　Fuel Cells　　Fuel cells generate DC electricity through redox reactions. Hydrogen fuel oxidizes on the anode while oxygen reduces on the cathode, producing a flow of electrons through the external circuit from the anode to the cathode.　　This covers some of the most common methods of producing consistent, unidirectional DC voltage for applications requiring stable DC power.　　How Does DC Voltage Work?　　Now that we’ve covered how direct current voltage is produced, how does DC voltage actually work to power electronics and devices?　　In any DC circuit, the power source maintains a constant electric potential difference between two points, denoted as positive and negative. This results in an electric field within the conductive circuit, causing electrons to flow from the point of higher potential (the negative terminal) towards lower potential (the positive terminal).　　The flow and direction of this DC electric current remain steady and one-way. This contiguity of flowing electrons powers the circuit.　　The level of DC voltage, measured in volts, determines the “push” driving electrons from the negative to the positive terminal. Higher DC voltage sources impart more energy to electrons in the circuit, resulting in stronger current flows. Resistance in the wires and components impedes the current flow.　　Can DC Voltage Hurt You?　　Since any DC voltage involves electric current flowing through the body, direct contact can cause electric shocks or burns. However, the level of danger depends largely on the voltage level.　　Low DC voltages under 50V applied across dry skin are generally not harmful. However, higher DC voltages can be extremely dangerous. 100-200V DC can trigger sustained muscular contractions, impair breathing, or cause cardiac arrhythmias. High voltages above 200V DC pose severe risks like burns, permanent cellular damage, or cardiac arrest.　　While DC is less likely to cause fibrillation than equal levels of AC voltage, the dangers of electrocution are still very real. Safety measures like insulation, overcurrent protection, and strict avoidance of exposed high-voltage DC are critical.　　So in short – low voltages are mostly safe, but high-amperage DC sources can easily be lethal if mishandled. Exercise extreme caution when working with exposed DC voltage over 100V.
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Release time：2023-11-13 15:42 reading：1313 Continue reading>>
novosns：Ultra-wide-body digital isolators make high-<span style='color:red'>voltage</span> applications more efficient and reliable
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novosns：Ultra-wide-body digital isolators make high-voltage applications more efficient and reliable

　　In recent years, the number of photovoltaic systems, chargers, new energy vehicles, energy storage facilities and other emerging technologies is increasing, and the installed base of industrial control devices, power supply, electricity and other conventional applications is still climbing. In this setting, high-voltage digital control applications pose growing isolation requirements, and the market sees a strong demand for high-efficiency and high-reliability digital isolators accordingly.　　In high-voltage systems, a reliable isolation gate must be built using isolation means, which electrically isolates sensitive electronic components from fast transient high-voltage components to ensure power safety, better system performance and higher reliability. To this end, many factors need to be taken into account, including isolation rating, creepage distance and electric clearance, common-mode transient immunity (CMTI), and electromagnetic interference (EMI).　　Wide bandgap (WBG) devices like SiC and driver products pose higher requirements for isolators while continuously improving the power density. Digital isolator now has become one of the semiconductor devices that help unlock the huge potential of high-voltage applications. It is widely used in photovoltaic systems, new energy vehicles, industrial automation systems, isolated SPI, RS232, RS485, general-purpose multi-channel isolation unit, and motor control.　　Challenges facing high-voltage isolation　　The growing requirements for higher reliability, longer service life and higher signal integrity in industry and automotive fields present challenges for high-voltage applications.　　High voltage power conversion must enhance efficiency while minimizing the system power loss. High voltage isolation design requires a robust isolation barrier to ensure system security. Under harsh operating conditions, it is necessary to address the difficulty in accurately measuring temperature, current and voltage by high voltage sensors.　　In addition, the use of WBG power devices also makes low-delay real-time control of high voltage systems essential. As the electrification process advances and high-voltage power systems become more complex, designers need to consider how to improve product performance and service life while ensuring the right isolation level and system security.　　Digital isolator is a device that enables signal transmission in electrical isolation condition. Featuring high operating voltage, low radiation, low power consumption and high efficiency, it is extensively used in industrial control, electric energy, communication networks, instrumentation, consumer electronics, and other electronic systems and devices.　　At present, three mainstream isolation solutions are available in the market: optocouplers, capacitive isolators, and magnetic isolators.　　Optocoupler came as the earliest isolation technology. It uses optical characteristics to realize one-way transmission of signals. However, due to optical attenuation over time, optocouplers may experience the aging effect.　　Capacitive isolator uses the capacitance effect to eliminate cross interference between signals, and features low propagation delay. It can transmit data at a rate of more than 150 Mbps, and consumes less bias current. However, capacitive isolator requires separate bias supply voltages on both sides of the isolation boundary. The biggest advantage of capacitive isolator is that it is low cost and can adopt a multichannel design.　　Magnetic isolator isolates signals by shielding the magnetic field. This makes it advantageous in applications requiring high-frequency DC-DC power conversion, but it is relatively expensive.　　Ultra-wide-body package emerging at the right time　　In photovoltaic applications, monocrystalline silicon and polycrystalline silicon materials are required. To improve the power density of photovoltaic modules, the bus voltage has been increased to 1500 V. This requires an isolator that provides a longer creepage distance to meet the voltage withstand and creepage distance requirements specified in China’s national standard GB4943.1-2022. As a response, some wide-body (SOP) and even ultra-wide-body (DWW) packages emerged. Actually, different manufacturers designate different names for ultra-wide-body packages.　　Ultra-wide-body digital isolator is a highly reliable isolation product that features high electromagnetic immunity, low electromagnetic radiation and low power consumption, and can withstand higher isolation surge voltage. The creepage distance of the ultra-wide-body package is up to 15 mm, which can meet the safety requirements of customers’ high-voltage systems. In photovoltaic systems for example, the creepage distance of isolator under 1500 V enhanced insulation condition shall be more than 14 mm, as required in IEC 62109.　　NSI82xx digital isolators from NOVOSENSE are products in ultra-wide-body package. They provide a long creepage distance of 15 mm, and an outstanding EMC property. This makes this digital isolator series a perfect choice for photovoltaic facilities and other high-voltage systems having a high creepage distance requirement. Moreover, the NSI82xx series is compatible with high-precision, high-speed and two-way digital isolators from other manufacturers, such as ISO78xx, ISO774x-Q1, and ACNT-H6xL, etc.　　Depending on applications, NSI82xx series are divided into two sub-series – NSI82xx-DSWWR and NSI82xx-Q1SWWR high-reliability, multichannel ultra-wide-body digital isolators. NSI82xx-DSWWR sub-series is designed for industrial applications, including NSI822xWx-DSWWR (2-channel), NSI823xWx-DSWWR (3-channel), and NSI824xWx-DSWWR (quad-channel). NSI82xx-Q1SWWR sub-series is suitable for automotive applications, including NSI822xWx-Q1SWWR (2-channel), NSI823xWx-Q1SWWR (3-channel), and NSI824xWx-Q1SWWR (quad-channel).　　According to the available information, NSI82xx-DSWWR ultra-wide-body digital isolators started mass production in January 2022, and a total of more than one million devices have been sold currently. More specifically, customers from power supply, NEVs, electric power, industrial control, photovoltaic, energy storage and charging piles are using ultra-wide-body digital isolators from NOVOSENSE.　　Answering high efficiency, high reliability and multi-function requirements　　For example, the quad-channel NSI824x digital isolator has UL1577 safety approval, and can withstand several levels of insulation voltage (3 kVrms, 3.75 kVrms, 5 kVrms and 8 kVrms). It’s noted that the ultra-wide-body package provides insulation voltage withstand capability of up to 8 kVrms, data rate of up to 150 Mbps, and CMTI of up to 200 kV/μs (min.).　　The NSI824x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Thanks to a wide supply voltage range, NSI824x can be directly connected with most digital interfaces, and allows easy level shift. Moreover, high system level EMC performance enhances its reliability and stability in service.　　The NSI824x series adopts the capacitive isolator technology, where the digital signal is modulated by the RF carrier generated by the internal oscillator on the transmitter side, then transmitted via capacitive isolator and demodulated on the receiver side. It’s especially noted that the proprietary Adaptive OOK® modulation technology from NOVOSENSE is used, which delivers many benefits including high noise resistance and low EMI.　　Key features　　NSI824x digital isolators have rich functional features as described below:　　• Insulation voltage: Up to 8kVrms (Ultra-wide-body package)　　• Data rate: DC to 150Mbps　　• Power supply voltage: 2.5V to 5.5V　　• High CMTI: 200kV/μs (min.)　　• Chip level ESD: ±8kV (human body model)　　• Robust electromagnetic compatibility (EMC)　　• System-Level ESD, EFT, and surge immunity　　• Low electromagnetic radiation　　• Default output high level or low level option　　• Low power consumption: 1.5mA/ch (1Mbps)　　• Low propagation delay: <15ns　　• Operating temperature: -55°C - 125°C　　• RoHS-compliant packages:　　• SOP16 (150mil), SSOP16, SOP16 (300mil) and SOP16 (600 mil)　　Part number, package and body size　　NSI824x digital isolators have the following safety regulatory approvals:　　• UL1577 recognition: Insulation voltage up to 8kVrms for 1 minute　　• CQC certification per GB4943.1-2011　　• CSA component notice 5A　　• DIN VDE V 0884-11:2017-01 enhanced isolator certification　　Tips for PCB layout　　In PCB layout, it should be noted that a 0.1μF bypass capacitor is required between VDD1 and GND1, and between VDD2 and GND2 of the NSI824x device, and that the capacitor should be placed as close to the package as possible. In the front of the recommended PCB layout, it should be ensured that there are no planes, traces, bonding pads and via holes in the space under the chip.　　In case of excessively high system noise, users can also place a resistor (50-300Ω) connected in series with the input and output for enhanced robustness of their design. A series resistor can also improve system reliability, for example, latch-up immunity. The typical output impedance of the isolator drive channel is about 50Ω (±40%). When the drive transmission line affects the load, the output pin should be appropriately terminated with a PCB trace having controlled impedance.
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Release time：2023-10-31 14:05 reading：1510 Continue reading>>
3PEAK Launches the TPR50, a High-performance Voltage Reference with an Initial Accuracy of 0.05%
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3PEAK Launches the TPR50, a High-performance Voltage Reference with an Initial Accuracy of 0.05%

　　3PEAK (stock code: 688536), a semiconductor company focusing on the development of high-performance analog chips and embedded processors, launched a high-precision, low-temperature drift voltage reference —TPR50. Featuring an initial accuracy of 0.05% and a temperature drift of 2.5 ppm/°C over the full temperature range of –40°C to +125°C, the product is widely used in testing and measuring, industrial instruments, data acquisition, and medical devices.　　Wide Input Range: 3 V-15 V　　Multiple Fixed Output Versions:　　1.25 V, 2.048 V, 2.5 V, 3 V, 3.3 V, 4.096 V, 4.5 V, 5 V　　Low Temperature Drift:　　Typical value 1 ppm/°C from 0°C to +70°C　　Typical value 2 ppm/°C from –40°C to +105°C　　Typical value 2.5 ppm/°C from –40°C to +125°C　　High Initial Accuracy:　　Initial Accuracy up to 0.05%　　Low Noise: 3 μVpp/V　　Wide Operating Temperature Range: –40°C to +125°C　　Package: SOP8　　The TPR50 series has an output current capability of ±10 mA, and its output can bypass the operational amplifier and directly connect to the ADC as a reference voltage. It has a wide input range of 3 V–15 V. The following diagram shows the typical application circuit of TPR50. The output capacitor ranges from 0.1 µF to 100 µF. The NR connects to a capacitor of 10 nF or above to ground, thus reducing the output voltage noise of TPR50.　　Featuring high initial accuracy, low temperature drift, and low time drift, the TPR50 series provides excellent voltage reference support for applications such as testing and measuring, industrial instruments, data acquisition, and medical devices.
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Release time：2023-09-06 13:42 reading：3593 Continue reading>>

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