Renesas Debuts New Group in Popular RA0 Series with Best-in-Class Power Consumption and Extended Temperature Range
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Renesas Debuts New Group in Popular RA0 Series with Best-in-Class Power Consumption and Extended Temperature Range

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RA0E2 microcontroller (MCU) Group based on the Arm® Cortex®-M23 processor. The new, cost-competitive devices offer extremely low power consumption, extended temperature range, and a wide variety of peripheral functions and safety features.　　Renesas introduced the RA0 MCU series in 2024 and it has quickly become very popular with a wide range of customers due to its affordability and low power consumption. RA0E1 devices have already been adopted in consumer electronics, appliance and white goods, power tools, industrial monitoring and other applications.　　RA0E2 MCUs are fully compatible with RA0E1 devices, offering pin-expansion while maintaining the same peripherals and ultra-low power. This compatibility lets customers re-use existing software assets. The new devices deliver industry-leading power consumption of only 2.8mA current in active mode, and 0.89 mA in sleep mode. In addition, an integrated High-speed On-Chip Oscillator (HOCO) enables the fastest wake-up time for this class of microcontroller. The fast wake-up enables the RA0 MCUs to stay in Software Standby mode more of the time, where power consumption drops to a minuscule 0.25 µA.　　Renesas’ RA0E1 and RA0E2 ultra-low power MCUs deliver an ideal solution for battery-operated consumer electronics devices, small appliances, industrial system control and building automation application.　　Feature Set Optimized for Low Cost　　The RA0E2 devices have a feature set optimized for cost-sensitive applications. They offer a wide operating voltage range of 1.6V to 5.5V so customers don’t need a level shifter/regulator in 5V systems. The RA0 MCUs also integrate timers, serial communications, analog functions, safety functions and security functionality to reduce customer BOM cost. A wide range of packaging options is also available, including a tiny 5mm x 5mm 32-lead QFN.　　In addition, the new MCU’s high-precision (±1.0%) HOCO improves baud rate accuracy and enables designers to forego a standalone oscillator. Unlike other HOCOs in the industry, it maintains this precision in environments from -40°C to 125°C. This wide temperature range enables customers to avoid costly and time-consuming “trimming,” even after the reflow process.　　“The market reception for our RA0 Series has exceeded even our own high expectations,” said Daryl Khoo, Vice President of the Embedded Processing Marketing Division at Renesas. “The RA0E2 Group MCUs deliver the same ultra-low power and price point that have been so popular with our customers. The addition of extended temperature range and more memory opens up even more applications and use cases. We plan to further expand the RA0 product lineup, delivering optimal solutions for 8-16 bit MCU users transitioning to 32-bit MCUs.”　　Key Features of the RA0E2 Group MCUs　　Core: 32MHz Arm Cortex-M23　　Memory: Up to 128KB integrated Code Flash memory and 16KB SRAM　　Extended Temperature Range: Ta -40°C to 125°C　　Timers: Timer array unit (16b x 8 channels), 32-bit interval timer (8b x 4 channels), RTC　　Communications Peripherals: 3 UARTs, 2 Async UART, 6 Simplified SPIs, 2 I2C, 6 Simplified I2Cs　　Analog Peripherals: 12-bit ADC, temperature sensor, internal reference voltage　　Safety: SRAM parity check, invalid memory access detection, frequency detection, A/D test, output level detection, CRC calculator, register write protection　　Security: Unique ID, TRNG, AES libraries, Flash read protection　　Packages: 32- and 48-lead QFNs, 32-, 48-, and 64-pin LQFP　　The new RA0E2 Group MCUs are supported by Renesas’ Flexible Software Package (FSP). The FSP enables faster application development by providing all the infrastructure software needed, including multiple RTOS, BSP, peripheral drivers, middleware, connectivity, networking, and security stacks as well as reference software to build complex AI, motor control and cloud solutions. It allows customers to integrate their own legacy code and choice of RTOS with FSP, thus providing full flexibility in application development. Using the FSP will ease migration of RA0E1 designs to larger RA0E2 devices if customers wish to do so.　　Availability　　The RA0E2 Group MCUs are available now, along with the FSP software and the RA0E2 Fast Prototyping Board. Samples and kits can be ordered either on the Renesas website or through distributors. More information on the new MCUs is available at renesas.com/RA0E2.　　Renesas MCU Leadership　　The world leader in MCUs, Renesas ships more than 3.5 billion units per year, with approximately 50% of shipments serving the automotive industry, and the remainder supporting industrial and Internet of Things applications as well as data center and communications infrastructure. Renesas has the broadest portfolio of 8-, 16- and 32-bit devices, delivering unmatched quality and efficiency with exceptional performance. As a trusted supplier, Renesas has decades of experience designing smart, secure MCUs, backed by a dual-source production model, the industry’s most advanced MCU process technology and a vast network of more than 250 ecosystem partners. For more information about Renesas MCUs, visit renesas.com/MCUs.
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Release time：2025-04-29 10:54 reading：221 Continue reading>>
Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs Integrated into SMA’s Large Scale Solar System
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Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs Integrated into SMA’s Large Scale Solar System

　　SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system technology, adopts Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs inside its new large scale solar system “Sunny Central FLEX”, a modular platform designed to streamline and enhance grid connections for large-scale photovoltaic installations, battery storage systems, and emerging technologies.　　“ROHM’s new 2kV class SiC MOSFETs are designed to enable simple and highly efficient converter topologies for 1500V DC-links. It is developed with high reliability targets and cosmic radiation robustness – addressing the stringent conditions and extended converter lifetime requirements of the photovoltaic sector and beyond,” says Wolfram Harnack, President at ROHM Semiconductor GmbH. “The technology of our SiC device structure and integrated on-chip gate resistance eases device paralleling and simplifies high power module designs. The mass production has started,” adds Harnack.　　Semikron Danfoss’ SEMITRANS® 20 has designed for high power applications and fast-switching operations, it represents the next generation of power modules for large converters. SEMITRANS® 20 with ROHM’s 2kV SiC MOSFETs is an integral part of SMA’s Sunny Central FLEX. “Semikron Danfoss and ROHM have collaborated for over a decade, focusing primarily on the implementation of silicon carbide (SiC) in power modules. More recently, we have teamed up to integrate silicon IGBTs as well”, says Peter Sontheimer, Senior Vice President of Semikron Danfoss’ Industry division.　　“The new SEMITRANS® 20 offers simple, efficient solutions for 1500VDC applications. These modules are ideal for solar and energy storage inverters. Upcoming high-power electric truck chargers, as well as wind converters, will also benefit,” adds Sontheimer.　　"The cooperation between SMA, Semikron Danfoss and ROHM is proof of how the seamless integration of innovative technologies creates the conditions for future-oriented energy projects," said Bernd Gessner, Product Manager Power Conversion Systems at SMA. "The demands on these solutions are higher than ever. SMA has decades of expertise and fulfills the highest requirements in terms of performance, reliability, durability and flexibility. The fact that Sunny Central FLEX meets these highest future-proof standards is also the result of the excellent cooperation with our partners who share the same commitment to excellence."　　About SMA Solar Technology AG        As a leading global specialist in photovoltaic and storage system technology, the SMA Group is setting the standards today for the decentralized and renewable energy supply of tomorrow. SMA’s portfolio contains a wide range of efficient PV and battery inverters, holistic system solutions for PV and battery-storage systems of all power classes, intelligent energy management systems and charging solutions for electric vehicles and power-to-gas applications. Digital energy services as well as extensive services round off SMA’s range. SMA inverters installed throughout the world within the last 20 years with a total output of approximately 144 GW help avoid the emission of more than 64 million tons of CO2. SMA’s multi-award-winning technology is protected by more than 1,600 patents and utility models. Since 2008, the Group’s parent company, SMA Solar Technology AG, has been listed on the Prime Standard of the Frankfurt Stock Exchange (S92) and is listed on the SDAX index.　　About Semikron Danfoss        Semikron Danfoss is a global technology leader in power electronics. Our product offerings include semiconductor devices, power modules, stacks and systems. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainably and thus to significantly reduce overall CO2 emissions – facing one of the biggest challenges today. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity and service to deliver best-in-industry performance and for a sustainable future. Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. We employ more than 3,500 people in 28 locations across the world. Our global footprint with production sites in Germany, Brazil, China, France, India, Italy, Slovakia and the United States ensures an unmatched service for our customers and partners. We offer more than 90 years of combined expertise in power module packaging, innovation and customer applications – making us the ultimate partner in power electronics.
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Release time：2025-04-29 10:49 reading：224 Continue reading>>
ROHM Develops New High Power Density SiC Power Modules Compact high heat dissipation design sets a new standard for OBCs
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ROHM Develops New High Power Density SiC Power Modules Compact high heat dissipation design sets a new standard for OBCs

　　ROHM has developed the new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters in onboard chargers (OBC) for xEVs (electric vehicles). The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications.　　In recent years, the rapid electrification of cars is driving efforts to achieve a decarbonized society. Electric vehicles are seeing higher battery voltages to extend the cruising range and improve charging speed, creating a demand for higher output from OBCs and DC-DC converters. At the same time, there is an increasing need in the market for greater miniaturization and lighter weight for these applications, requiring technological breakthroughs to improve power density - a key factor - while enhancing heat dissipation characteristics that could otherwise hinder progress. ROHM’s HSDIP20 package addresses these technical challenges that were previously becoming difficult to overcome with discrete configurations, contributing to both higher output and the downsizing of electric powertrains.　　The HSDIP20 features an insulating substrate with excellent heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit utilizing six discrete SiC MOSFETs with top-side heat dissipation to ROHM’s 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38°C cooler (at 25W operation). This high heat dissipation performance supports high currents even in a compact package, achieving industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules. As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52% compared to top-side cooled discrete configurations, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs.　　Going forward, ROHM will continue to advance the development of SiC modules that balance miniaturization with high efficiency while also focusing on the development of automotive SiC IPMs that provide higher reliability in a smaller form factor.　　Product Lineup　　*1: Tc=25°C VGS=18V *2: Combines chips with different ON resistances　　*3: Q1, Q4 pins *4: Q2, Q3, Q5, Q6 pins　　Application Examples　　Power conversion circuits like PFC and LLC converters are commonly used in the primary side circuits of industrial equipment, allowing the HSDIP20 to also contribute to the miniaturization of applications in both the industrial and consumer electronics fields.　　◇ Automotive systems　　Onboard chargers, electric compressors and more.　　◇ Industrial equipment　　EV charging stations, V2X systems, AC servos, server power supplies, PV inverters, power conditioners, etc.　　Sales Information　　Pricing: $100/unit (samples, excluding tax)　　Availability: OEM quantities (April 2025)　　Supporting Information　　ROHM is committed to providing application-level support, including the use of in-house motor testing equipment. A variety of supporting materials are also offered such as simulations and thermal designs that enable quick evaluation and adoption of HSDIP20 products. Two evaluation kits are available as well, one for double-pulse testing and the other for 3-phase full bridge applications, enabling evaluation under close to actual circuit conditions.　　For more information, please contact AMEYA360 or visit the contact page on ROHM’s website.　　EcoSiC™ Brand　　EcoSiC™ is a brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　・EcoSIC™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　Power Factor Correction (PFC)　　A circuit that enhances the power factor by shaping the waveform of input power in the power supply circuit. By using a PFC circuit, the input power is made closer to a sine wave (power factor = 1), improving power conversion efficiency. While PFC circuits typically rely on diode rectification, OBCs often employ active bridge rectification using MOSFETs or bridgeless PFC. This approach is favored because MOSFETs offer lower switching losses, and especially in high power PFCs, using SiC MOSFETs reduces heat generation and power losses.　　LLC Converter　　A type of resonant DC-DC converter known for its high efficiency with low noise power conversion. The name LLC comes from its basic configuration, which combines two inductors (L) and a capacitor (C) in the circuit. By forming a resonant circuit, switching losses are significantly reduced, making it ideal for applications requiring high efficiency, such as OBCs, power supplies for industrial equipment, and server power supplies.
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Release time：2025-04-24 17:23 reading：217 Continue reading>>
NOVOSENSE introduces NSDA6934-Q1: Automotive-grade Class D audio amplifier with digital input
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NOVOSENSE introduces NSDA6934-Q1: Automotive-grade Class D audio amplifier with digital input

　　NOVOSENSE recently announced the launch of the NSDA6934-Q1, a digital-input automotive-grade Class D audio amplifier designed for vehicle audio systems. Featuring four-channel audio output with up to 75W per channel, it supports low-latency mode and sampling rates up to 192kHz. The amplifier offers flexible switching frequencies, multiple modulation options, and comprehensive protection features, making it highly adaptable to various automotive audio system designs.　　Class D amplifiers: Driving the evolution of automotive audio　　As automotive electronics continue to advance, Class D amplifiers have emerged as the preferred choice for vehicle audio systems due to their high efficiency, low heat dissipation, and compact form factor. These amplifiers not only meet modern vehicles’ stringent energy efficiency demands but also enhance audio quality and power output within limited space, playing a key role in the evolution of automotive audio technology.　　Optimized Low-Latency Mode: Reducing Path Delay by Over 70%　　In automotive audio systems, amplifiers boost signals from the DSP (Digital Signal Processor) before transmitting them to the speakers. Traditional amplifiers can contribute to over 30% of total signal transmission latency, impacting system performance.　　The NSDA6934-Q1 features a unique low-latency mode that reduces transmission path delay by more than 70%, granting the DSP additional time for signal processing. This reduces DSP resource demands and enhances the effectiveness of RNC (Road Noise Cancellation). Additionally, the amplifier supports up to 192kHz sampling rates, delivering high-resolution audio with enhanced clarity and detail for an immersive in-car listening experience.　　Flexible Configurations to Suit Various Designs　　The NSDA6934-Q1 provides a wide range of switching frequencies and modulation options, allowing system engineers to optimize efficiency and size.　　Adjustable Switching Frequency (384kHz – 2.1MHz)　　At 384kHz, the amplifier achieves up to 93% efficiency, ideal for applications prioritizing power savings, though it requires a 10μH inductor for operation.　　At 2.1MHz, the amplifier supports a compact 3.3μH inductor, making it suitable for space-constrained smart cockpit integration.　　Selectable Modulation Modes (BD Mode & 1SPW Mode)　　BD Mode (50% duty cycle) ensures superior linearity at high power levels, making it ideal for high-output applications.　　1SPW Mode (20% duty cycle) reduces conduction losses, improving efficiency in low-power scenarios　　Additionally, the NSDA6934-Q1 supports TDM16 data format, ensuring seamless integration with mainstream audio interfaces. With eight selectable I2C addresses, it prevents communication conflicts among peripheral devices. It also features integrated PVDD voltage monitoring, eliminating the need for external resistor dividers and simplifying system wiring and debugging.　　Enhanced EMC Performance & Comprehensive Protection　　The NSDA6934-Q1 incorporates multiple EMC optimization techniques, including slew rate control, phase control, and three spread-spectrum modes (triangular wave, random spread, hybrid spread), helping customers pass system-level EMC tests efficiently.For system reliability, the amplifier integrates multiple intelligent protection and diagnostic functions, including:　　• I2C watchdog for real-time bus monitoring.　　• Thermal protection, which automatically reduces gain under high-temperature conditions.　　• AC/DC diagnostics for real-time power supply monitoring.　　• Comprehensive protection suite, including temperature alarms, over-temperature shutdown, undervoltage, overvoltage, and overcurrent protection, ensuring robust system stability.
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Release time：2025-04-24 17:19 reading：230 Continue reading>>
GigaDevice's GD5F1GM9 Series High-Speed QSPI NAND Flash Sets New Benchmark with Breakthrough Read Speeds for Accelerated Application Startup
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GigaDevice's GD5F1GM9 Series High-Speed QSPI NAND Flash Sets New Benchmark with Breakthrough Read Speeds for Accelerated Application Startup

　　GigaDevice, a leading semiconductor company specializing in Flash Memory, 32-bit Microcontrollers (MCUs), Sensors, Analog products and solutions, announces the launch of its GD5F1GM9 high-speed QSPI NAND Flash, which features breakthrough read speeds and innovative Bad Block Management (BBM) functionality.　　The GD5F1GM9 series combines the high-speed read performance of NOR Flash with the large capacity and cost-effectiveness of NAND Flash. These innovations address key industry challenges of slow response times and vulnerability to bad block interference associated with traditional SPI NAND Flash. The GD51GM9 launch will open new growth opportunities for SPI NAND Flash, making it the ideal choice for fast-boot applications in sectors such as security, industrial, and IoT.　　The GD5F1GM9 series high-speed QSPI NAND Flash is built on a 24nm process node. The series supports both 3V and 1.8V operating voltages as well as high-speed read modes including Continuous Read, Cache Read, and Auto Load Next Page. Continuous Read and Auto Load Next Page modes are newer read features added on this series, offering users versatile read options to further accelerate code and data fetch. These read modes utilize the new parallel computation approach for its ECC (Error Correction Code) design, replacing the previous serial computation method. This innovation significantly reduces the calculation time for the built-in ECC.　　The 3V version of the series achieves a continuous read rate of up to 83MB/s in Continuous Read mode, operating at a maximum clock frequency of 166MHz. The 1.8V version has a continuous read rate of up to 66MB/s and supports a maximum clock frequency of 133MHz. The results in GD5F1GM9’s read speeds are up to 3 times faster than traditional SPI NAND products at the same frequency. These design advantages improve data access throughput, reduce system boot time, and lower overall system power consumption.　　As bad blocks from the factory are inherent issues in NAND Flash, the GD5F1GM9 incorporates an on-chip Advanced Bad Block Management (BBM) to ensure comprehensive functionality of Continuous Read mode. Continuous Read allows read access of the full memory array with a single Read command in aid of the executed BBM that link bad block addresses to good block addresses. Read access will then automatically skip the bad block due to the established link access to the remap and linked good physical block address.　　From the factory, the GD5F1GM9 series guarantees the first 256 blocks are good blocks. While there will be bad blocks from the factory and possible new bad blocks may arise during usage that needs to be managed, the BBM feature can create a logical block address to the physical block address link, allowing users to swap and replace bad blocks and the associated access will be on a good block once the BBM link is setup.　　The device can support up to 20 Look Up Table BBM Links to further compliment Continuous Read mode functionality. This not only significantly improves resource utilization but also simplifies system design.　　“Currently, the generally slow read speed of SPI NAND Flash has become a major bottleneck in enhancing boot performance of key applications,” said Ruwei Su, GigaDevice vice president and general manager of Flash BU, "The launch of GD5F1GM9 series high-speed QSPI NAND Flash sets a new performance benchmark in the market. This series effectively addresses the read speed limitations of traditional SPI NAND Flash and offers a new solution for bad block management, making it an ideal alternative for NOR Flash users with growing capacity needs. In the future, GigaDevice will continue to refine its underlying technologies to provide customers with more efficient and reliable storage solutions."　　The GD5F1GM9 series offers 1Gb capacity with 3V/1.8V voltage options and supports WSON8 8x6mm, WSON8 6x5mm, and BGA24 (5×5 ball array) 5x5 ball package options. For detailed information and product pricing, please contact your local sales representative.　　About GigaDevice　　GigaDevice Semiconductor Inc. (SSE Stock Code 603986) is a global leading fabless supplier. The company was founded in April 2005 and headquartered in Beijing, China, with branch offices in many countries and regions worldwide, providing local support at customers' fingertips. Committed to building a complete ecosystem with four major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety product certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management. For more details, please visit: www.gigadevice.com　　*GigaDevice and their logos are trademarks, or registered trademarks of GigaDevice Semiconductor Inc. Other names and brands are the property of their respective owners.
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Release time：2025-04-23 17:09 reading：233 Continue reading>>
ROHM at PCIM Europe 2025: Powerful Highlights for E-Mobility and Industrial Applications
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ROHM at PCIM Europe 2025: Powerful Highlights for E-Mobility and Industrial Applications

　　From May 6th to 8th ROHM will exhibit at the PCIM Expo & Conference, the leading international event for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, taking place in Nuremberg. On its booth 304 in hall 9, ROHM will showcase reference projects with renowned partners and present the evolution of its package designs and evaluation boards.　　"PCIM 2025 in Nuremberg is the meeting place for innovation and progress in power electronics. This is where the brightest minds in the industry come together to shape the future of e-mobility and industrial applications. We will be presenting great customer applications to showcase the possibilities offered by our products in the best possible way. Whether in the PV industry or e-mobility sectors – we are involved and would like to talk to our customers on site about the key projects of the future," says Wolfram Harnack, President at ROHM Semiconductor Europe.　　Highlights of ROHM’s presence at PCIM 2025 include:　　For automotive applications, ROHM will exhibit an inverter unit utilizing the TRCDRIVE pack™ that consists of a 2-in-1 SiC Molded Module. Valeo and ROHM have been collaborating since 2022, initially focusing on technical exchange to enhance the performance and efficiency of motor inverters, a key component in the propulsion systems of electric vehicles (EVs) and plug-in hybrids (PHEVs).　　Power solutions for on-board chargers (OBCs), essential for e-mobility applications, will also be on the booth. ROHM will showcase the new EcoSiC™ molded power modules suitable for OBCs, along with OBC applications adopting ROHM’s power semiconductor devices.　　ROHM’s Power Eco Family products: ROHM has grouped the four product lines of power semiconductors under the brand concept “Power Eco Family” and is contributing to the development of a sustainable ecosystem through improved application performance. We will show featured solutions and case studies at the booth.　　In this context, one application example is the new GaN Lineup: ROHM’s EcoGaN™ series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions, a subsidiary of the Murata Manufacturing Group and a leading supplier of electronic components, batteries and power supplies in Japan. Integrating ROHM’s GaN HEMTs, which combine low loss operation with high-speed switching performance, in Murata Power Solutions’ 5.5kW AI server power supply unit achieves greater efficiency and miniaturization.　　For more information, please refer to AMEYA360’s related news release.　　The details of the Power Eco Family are as follows.　　●　EcoSiC™ is a brand of devices leveraging silicon carbide which is attracting attention in the power device field for performance that surpasses silicon.　　●　EcoGaN™ comprises compact, energy-efficient devices that utilize the low ON resistance, high-speed switching characteristics of GaN to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.　　●　EcoIGBT™ is ROHM’s brand of IGBTs consisting of both devices and modules designed to meet the needs of high-voltage applications in the power device field.　　●　EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector.　　During the fair, ROHM’s power experts will participate in several panel discussions and conference presentations. Additionally, they will hold poster sessions at the PCIM Europe 2025 conference.　　More information regarding ROHM’s key highlights at PCIM 2025 is available here: www.rohm.com/pcim　　*EcoSiC™, EcoGaN™, EcoIGBT™, EcoMOS™ and TRCDRIVE pack™ are trademarks or registered trademarks of ROHM Co., Ltd.
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Release time：2025-04-23 17:01 reading：217 Continue reading>>
TAIYO YUDEN Commercializes LCQPB Series of Power Inductors for Automotive Application
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TAIYO YUDEN Commercializes LCQPB Series of Power Inductors for Automotive Application

　　TAIYO YUDEN CO., LTD. has commercialized the new LCQPB series of wire-wound ferrite power inductors, which have AEC-Q200 qualification for automotive passive components.　　The LCQPB series power inductors are designed for use as choke coils and noise filters in DC-DC converters in power circuits for automotive body and information systems.　　TAIYO YUDEN previously released the LCEN series and LCCN series of metal power inductors made from metallic magnetic substances for automobile application and the LCXN series and LCXH series of ferrite power inductors. To these, we add the new LCQPB series to give our customers more choice by substance and structure and a high degree of freedom in design.　　The LCQPB series inductors have been manufactured by our overseas subsidiary, TAIYO YUDEN (PHILIPPINES), (Lapulapu City, Cebu) since March 2025. Samples are available for 50 yen per unit.　　Technology Background　　The advancements that we have seen in recent years in electronic controls in vehicles, as typified by ADAS units, have led to a greater number of power supply circuits on vehicles, which in turn has led to growth in the demand for power inductors that are used in these circuits. In order to miniaturize power supply circuits, engineers demand inductors with specific properties that allow high-density mounting with a high degree of freedom in design and noise suppression by frequency.　　Therefore, TAIYO YUDEN has newly commercialized the LCQPB series, which complies with AEC-Q200. The LCQPB series inductors have a frameless structure that results in a small footprint. The new LCQPB series, together with our other series of inductors designed for automotive application, give our customers more choice by substance and structure and a high degree of freedom in design.　　TAIYO YUDEN focuses on the development of products that meet market needs, and will continue to expand its power inductor product lineup.　　■ Application　　The LCQPB series power inductors are applicable as choke coils and noise filters in DC-DC converters in power circuits for automotive body and information systems.
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Release time：2025-04-10 13:18 reading：259 Continue reading>>
ROHM Develops Class-Leading* Low ON-Resistance, High-Power MOSFETs for High-Performance Enterprise and AI Servers
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ROHM Develops Class-Leading* Low ON-Resistance, High-Power MOSFETs for High-Performance Enterprise and AI Servers

　　ROHM has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise and AI servers.　　The advancement of high-level data processing technologies and the acceleration of digital transformation have increased the demand for data center servers. At the same time, the number of servers equipped with advanced computing capabilities for AI processing is on the rise and is expected to continue to grow. These servers operate 24 hours a day, 7 days a week – ensuring continuous operation. As a result, conduction losses caused by the ON-resistance of multiple MOSFETs in the power block have a significant impact on system performance and energy efficiency. This becomes particularly evident in AC-DC conversion circuits, where conduction losses make up a substantial portion of total power loss – driving the need for low ON-resistance MOSFETs.　　Additionally, servers equipped with a standard hot-swap function, which allow for the replacement and maintenance of internal boards and storage devices while powered ON, experience a high inrush current during component exchanges. Therefore, to protect server components and MOSFETs from damage, a wide Safe Operating Area (SOA) tolerance is essential.　　To address these challenges, ROHM has developed its new DFN5060-8S package that supports the packaging of a larger die compared to conventional designs, resulting in a lineup of power MOSFETs that achieve industry-leading* low ON-resistance along with wide SOA capability. These new products significantly contribute to improving efficiency and enhancing reliability in server power circuits.　　The new lineup includes three products. The RS7E200BG (30V) is optimized for both secondary-side AC-DC conversion circuits and hot-swap controller (HSC) circuits in 12V power supplies used in high-performance enterprise servers. The RS7N200BH (80V) and RS7N160BH (80V) are ideal for secondary AC-DC conversion circuits in 48V AI server power supplies.　　All three models feature the newly developed DFN5060-8S package (5.0mm × 6.0mm). The package increases the internal die size area by approximately 65% compared to the conventional HSOP8 package (5.0mm × 6.0mm). As a result, the RS7E200BG (30V) and RS7N200BH (80V) achieve ON-resistances of 0.53mΩ and 1.7mΩ (at VGS = 10V), respectively – both of which rank among the best in the industry in the 5.0mm × 6.0mm class, significantly contributing to higher efficiency in server power circuits.　　Moreover, ROHM has optimized the internal clip design to enhance heat dissipation, further improving SOA tolerance, which contributes to ensuring application reliability. Notably, the RS7E200BG (30V) achieves an SOA tolerance of over 70A at a pulse width of 1ms and VDS = 12V, which is twice that of the conventional HSOP8 package MOSFETs under the same conditions, ensuring industry-leading SOA performance in a 5.0mm × 6.0mm footprint.　　Going forward, ROHM plans to gradually begin mass production of power MOSFETs compatible with hot-swap controller circuits for AI servers in 2025, continuing to expand its lineup that contributes to greater efficiency and reliability across a wide range of applications.　　Product Lineup　　EcoMOS™ Brand　　EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Application Examples　　・AC-DC conversion and HSC circuits for 12V high-performance enterprise server power supplies　　・AC-DC conversion circuits for 48V AI server power supplies　　・48V industrial equipment power supplies (i.e. fan motors)　　Terminology　　Low ON-Resistance (RDS(on))　　The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) results in lower power loss during operation.　　SOA (Safe Operating Area) Tolerance　　The range of voltage and current within which a device can operate safely without damage. Exceeding this range can lead to thermal runaway or device failure, making SOA tolerance a critical factor, especially in applications prone to inrush current or overcurrent.　　Power MOSFET　　A type of MOSFET used for power conversion and switching applications. N-channel MOSFETs are the mainstream choice, as they become conductive when a positive voltage is applied to the gate relative to the source, offering lower ON-resistance and higher efficiency than P-channel variants. Due to their low loss and high-speed switching capabilities, power MOSFETs are widely used in power circuits, motor drive circuits, and inverters.　　Hot-Swap Controller (HSC)　　A specialized integrated circuit (IC) that enables hot-swap functionality, allowing components to be inserted or removed while the power supply system remains active. It plays a crucial role in managing inrush current that occurs during component insertion, protecting both the system and connected components from damage.　　Inrush Current　　A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered ON. Proper control of this current reduces stress on power circuit components, helping to prevent device failure and stabilize the system.
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Release time：2025-04-10 13:10 reading：273 Continue reading>>
Murata Commercializes Broadband-Compatible 1210 inch size, in-vehicle PoC Inductors, Reducing Component Size and Weight
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Murata Commercializes Broadband-Compatible 1210 inch size, in-vehicle PoC Inductors, Reducing Component Size and Weight

　　Murata Manufacturing Co., Ltd. (hereinafter “Murata”) has commercialized the 1210 size in-vehicle PoC inductor LQW32FT_2H series (hereinafter “this product”). 　　With Advanced Driver Assistance Systems (ADAS) becoming more commonplace in recent years, the numbers of high-definition cameras on vehicles are also increasing. High-speed interface PoC*2 that combine both signal and power transmissions on a single coaxial cable are being used on vehicle camera systems with LVDS*1 transmission. In a PoC circuit, a circuit processor handles broadband signals, and usually multiple inductors are used for a wider bandwidth to maintain the high impedance required to separate the signal and the power.　　In response, we applied our proprietary ceramic materials and product structures in order to achieve a high impedance, reducing the number of PoC inductors. This contributes to component size and weight reduction through implementation space reduction.　　Going forward, Murata will strive to develop products to meet market needs and contribute to the shift to high-performance and high-functionality automobiles.　　Specifications　　*1LVDS (Low Voltage Differential Signal): The most general technical standard for the transmission of differential data.　　*2PoC (Power Over Coax): A method that combines the signal line and power line to a single coaxial cable.　　*3AEC-Q200: One of the standards defined by the AEC (Automotive Electronics Council).
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Release time：2025-04-08 14:17 reading：283 Continue reading>>
Renesas Introduces Low-Power Bluetooth Low Energy SoC for Automotive Applications
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Renesas Introduces Low-Power Bluetooth Low Energy SoC for Automotive Applications

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced a new industry-leading Bluetooth chip that combines a radio transceiver, an Arm® M0+ microcontroller, memory, peripherals and security features in a compact SoC design. The DA14533, the first automotive-qualified device in the company’s Bluetooth® Low Energy system-on-chip (SoC) family, includes advanced power management features to simplify system integration and reduce power consumption. With its software stack qualified against Bluetooth Core 5.3 and support for extended temperatures, developers can jump-start projects in applications from tire pressure monitoring and keyless entry to wireless sensors and battery management systems.　　Optimized Design to Deliver Unparalleled Power Efficiency　　Building on Renesas’ leadership in Bluetooth LE SoCs (SmartBond Tiny Family) with industry-leading low power consumption, the new DA14533 includes some of the most advanced power management features in the industry. The device includes an integrated DC-DC buck converter, which accurately adjusts the output voltage according to system requirements. Active system power consumption is lower than comparable devices in the market, requiring only 3.1mA during transmission and 2.5mA during reception. In hibernation mode, the current drops to 500nA. These power management and power-saving features help extend the operational life of small-capacity battery-powered systems and meet the stringent power requirements of tire pressure monitoring systems’ mission profile.　　Auto-Grade AEC-Q100 Qualified and Up-to-Date Security Features　　The DA14533 is an AEC-Q100 Grade 2 qualified device, which means the device has passed strict testing to sustain quality and reliability in harsh automotive environments. Moreover, the device’s extended temperature range (-40 to +105°C) ensures reliable performance in demanding conditions, making it ideal for automotive and industrial systems where stability and durability are essential. Qualified against Bluetooth Core 5.3 specifications, the device contains the latest security features to safeguard connected devices from various threats.　　“Our SmartBond Tiny SoC family has seen remarkable success in the industrial market, with over 100 million units shipped to date,” said Chandana Pairla, VP of Connectivity Solutions Division at Renesas. “This new automotive-grade device will enable a new class of Bluetooth LE applications that demand high power efficiency, a small footprint and broader temperature tolerance for next-generation battery-powered automotive and industrial systems.”　　Lower Bill-of-Materials Reduces Costs and Simplifies Development　　Similar to other Bluetooth LE SoC devices in the SmartBond Tiny family, the DA14533 only requires 6 external components, offering a best-in-class engineering bill of materials (eBOM).　　A single external crystal oscillator (XTAL) is used for both active and sleep modes, eliminating the need for a separate oscillator for sleep mode. Its ultra-compact design – available in a WFFCQFN 22-pin 3.5 x 3.5 mm package – makes the device the smallest automotive Bluetooth LE SoC on the market. With its compact design and low eBOM, the device integrates seamlessly into space-constrained systems, reducing overall system costs and accelerating time-to-market for customers.　　Key Features of the DA14533　　Arm® Cortex®-M0+ microcontroller – Standalone application processor or data pump in hosted systems　　64KB RAM and 12KB One-Time Programmable (OTP) memory　　2.4 GHz radio transceiver　　Integrated low IQ buck DC-DC converter　　External SPI flash　　Single XTAL operation (single crystal oscillator)　　Software stack qualified against Bluetooth Core 5.3　　AEC-Q100 Grade 2-qualified with wide operating temperature range support (-40 to +105°C)　　WFFCQFN 22-pin 3.5 x 3.5 mm package
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Release time：2025-04-08 14:06 reading：327 Continue reading>>

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