GigaDevice Partners With Melchioni Electronics to Expand Business in France, Italy and the Iberian Peninsula
  GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, has entered into a distribution agreement with Milan-based Melchioni Electronics.  The partnership extends GigaDevice's reach into several major European markets, with Melchioni Electronics supplying not only GigaDevice's leading Flash and MCU lines but also delivering dedicated field application engineering support. The deal covers distribution in France, Italy, Spain and Portugal, with on-the-ground presence in each of these countries.  GigaDevice delivers world-class SPI NOR Flash, SLC NAND Flash, 32-bit microcontrollers, analog, and sensor products. These technologies play a pivotal role across applications including industrial automation, automotive, consumer electronics, IoT, network communications, mobile, and PCs.  "The establishment of this partnership and the accelerated entry into the European markets are significant steps in our strategy," said Dr. Reiner Jumpertz, GigaDevice VP and General Manager in the EMEA region. "Melchioni has an exceptional reputation and is well-known for its deep engineering expertise. Their regional FAE and marketing teams perfectly support our successful growth plans in Europe.”  “This strategic agreement with GigaDevice delivers substantial value to our customer base,” stated Elisabetta Dell’Olio, Head of Technology & Suppliers Platform at Melchioni Electronics. “Our core mission is to empower enterprises with the most effective and cutting-edge technologies. By adding GigaDevice’s world-class Flash memory solutions and GD32 microcontrollers (MCUs) to our services, we are significantly elevating our offering across the automotive, industrial automation, and consumer electronics sectors.”  About Melchioni Electronics  Melchioni Electronics is a prominent company specializing in the distribution and integration of high-quality electronic solutions. With a strong reputation in the industry, Melchioni Electronics serves a diverse range of industrial sectors. The company is known for its expertise in providing electronic components and its ability to tailor customized solutions to meet the unique needs of its clients. Melchioni Electronics is committed to innovation and excellence, continually pushing the boundaries of technology to deliver cutting-edge electronic solutions to its customers. With a focus on quality, reliability, and customer satisfaction, Melchioni Electronics is a trusted partner for businesses seeking advanced electronic solutions and integration services.  About GigaDevice  GigaDevice Semiconductor Inc. is a global leading fabless supplier. Founded in April 2005, the company has continuously expanded its international footprint and established its global headquarters in Singapore in 2025. Today, GigaDevice operates branch offices across numerous countries and regions, providing localized support at customers' fingertips. Committed to building a complete ecosystem with major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety product certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management.
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Release time:2026-01-20 15:00 reading:1234 Continue reading>>
Murata:SCH16T-K20 High-Precision 6-Axis IMU for Robotics and Camera Systems
  Murata Manufacturing Co., Ltd. has announced the expansion of its SCH16T series of high-performance inertial measurement units (IMUs) with the introduction of the SCH16T-K20, targeting industrial, prosumer, and consumer markets worldwide. Designed for OEMs in robotics, drones, and camera systems, as well as IMU module manufacturers and system integrators requiring safety-critical IMUs, the SCH16T-K20 delivers market-leading precision, mechanical robustness, and reliability.  In demanding inertial measurement applications such as dead-reckoning navigation as well as drone and camera stabilization, small measurement errors can accumulate over time leading to unpredictable measurement results. In these applications, key IMU parameters such as noise density, offset bias drift, and vibration rectification ultimately limit the end-application performance and achievable response speed. Murata improves all the key areas with the new SCH16T-K20, which features a brand-new MEMS accelerometer and improved gyroscope temperature calibration.  The SCH16T-K20 is a 6 axis IMU with a typical gyroscope noise density of 0.0004 (°/s)/√Hz, gyroscope bias instability of 0.3 °/h, and accelerometer noise density as low as 33 µg/√Hz. Like all other SCH16T products, the SCH16T-K20 has a wide operating temperature range from -40 °C to +110 °C, a supply voltage of 3.0–3.6 V, and I/O voltage of 1.7–3.6 V, and a compact size of 0.46 × 0.53 × 0.11 inch (11.8 × 13.4 × 2.9 mm).  The driver behind the SCH16T-K20 accelerometer performance improvement is the brand-new accelerometer MEMS based on Murata’s proven 3D MEMS technology. The new MEMS uses a double-differential measurement principle, familiar from current SCA3400 and legacy SCA103T series sensors. The double differential measurement enables SCH16T-K20’s market leading low noise density, as well as thermal and lifetime stability.  The SCH16T-K20 also includes an enhanced version of the market-leading low-noise SCH16T gyroscope, now tuned specifically for the -40 °C to +85 °C temperature range to enable low offset bias shift across that range. All SCH16T series products are carefully validated with a test set based on AEC-Q100 operating temperature Grade 1 (-40 °C to +125 °C) standards*, ensuring reliable operation over a wide temperature window. The series sensors include market-leading self-diagnostic features, making them suitable for safety-critical applications. Murata’s unique MEMS stands out in the competitive IMU market for its exceptional mechanical resilience to shocks and vibration rectification. The series’ robust design and reliability contribute to longer device lifespans and reduced waste.  The SCH16T-K20 becomes the highest-performing variant in the SCH16T lineup while maintaining pin-to-pin and software compatibility. This compatibility makes integration of different SCH16T variants easy for OEMs and module designers. Mass production of the SCH16T-K20 is scheduled to begin in the first half of 2026. Murata will continue developing sensor solutions aligned with evolving market demands, contributing to safer, more sustainable, and higher-performing technologies across industrial and consumer markets.
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Release time:2025-12-26 16:09 reading:911 Continue reading>>
ROHM’s Flexible Brushed DC Motor Driver <span style='color:red'>ICs</span> for a Wide Range Applications
  ROHM has developed two new motor driver ICs for brushed DC motors, BD60210FV (20V, 2ch) and BD64950EFJ (40V, 1ch). They are intended for use in home and office appliances such as refrigerators, air conditioners, printers, and robotic vacuum cleaners.  In recent years, the electrification of consumer and industrial equipment - especially white goods - has accelerated, increasing the demand for energy-efficient brushed DC motors. At the same time, motor drivers are expected to support multiple applications and use cases while reducing external component count and size.  To address these needs, these new products adopt highly versatile packages, making them ideal not only for new platform designs but also for redesigns and derivative products. Additionally, they achieve ultra-low standby current (Typ: 0.0μA, Max: 1.0μA), significantly contributing to power savings during standby operation.  The BD60210FV can function as a dual H-bridge (2ch) motor driver with direct PWM control, capable of driving two DC brush motors, a bipolar stepper motor driver, or solenoid driver. Its H-bridge circuit configuration eliminates the need for a boost circuit, minimizing external components and contributing to space-saving and simplified design. It supports input voltage from 8V to 18V and 1A/phase continuous current and 4A/phase peak current.  The BD64950EFJ features a single H-bridge (1ch) that supports both direct PWM control and constant current PWM control. Its low on-resistance design reduces heat generation, enabling efficient motor drive. With a 40V withstand voltage and 3.5A continuous current (6A peak), it is suitable for high-powered, high-voltage (24V) DC brush motor applications.  Both products are now in mass production (sample price: $1.5/unit, tax excluded). Online sales have also started, and they (BD60210FV, BD64950EFJ) can be purchased from online distributors such as AMEYA360. Evaluation boards (BD60210FV-EVK-001, BD64950EFJ-EVK-001) are also available to support application development and design.  ROHM will continue to expand its motor drive solutions for consumer and industrial equipment, contributing to greater comfort and energy savings in society.  Application Examples  •Consumer Equipment: Refrigerators (ice maker rotation, fan valve control), Air conditioners (louver control), Printers (carriage movement), Robotic vacuum cleaners (brush rotation), Water heaters and rice cookers (valve control), Humidifiers (fan control) etc.  •Industrial Equipment: Automatic doors and shutters (operation control), Small conveyors (transport control), Power tools (rotation control), Other small motor control applications, etc.  Terminology  H-Bridge  An electronic circuit used to control the rotation direction of a motor. It is called an H-bridge because it comprises four electronic switches (MOSFETs) whose arrangement resembles the letter “H”.  Direct PWM Control  A method where a PWM (Pulse Width Modulation) signal is directly applied to the H-bridge to control motor speed. The voltage supplied to the motor is adjusted by the PWM duty cycle. This method offers a simple circuit configuration and high responsiveness.  Constant Current PWM Control  A control method that uses PWM to maintain a constant current to the motor. It allows the motor to maintain torque even at low speeds and is used in applications requiring precise control.
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Release time:2025-12-18 15:39 reading:974 Continue reading>>
Driving Innovation Together: NOVOSENSE, UAES and Innoscience Join Forces to Reshape Power Electronics for New Energy Vehicles
  September 29, 2025 – NOVOSENSE Microelectronics, United Automotive Electronic Systems (UAES) and Innoscience have signed a strategic cooperation agreement to jointly advance power electronics for new energy vehicles (NEVs). The three parties will collaborate on the development of next-generation intelligent integrated Gallium Nitride (GaN) products. Building on their combined expertise, the new devices will deliver more reliable GaN driving and protection features, enabling higher power density and paving the way for commercial adoption across the automotive industry.Signing Ceremony  GaN as a Key Driver for NEV Innovation  With its superior material properties, GaN is emerging as a transformative technology in automotive power electronics. Compared to traditional silicon devices, GaN significantly improves system efficiency and power density, allowing for more compact and lighter designs—addressing the core requirements of vehicle electrification and lightweighting.  Complementary Strengths, Shared Goals  Through joint R&D and application validation, NOVOSENSE, UAES and Innoscience aim to tackle critical challenges such as efficiency, reliability and cost. Together, the three parties will deliver solutions that combine high performance with competitive economics. NOVOSENSE brings extensive expertise in high-performance analog and mixed-signal IC design. UAES contributes deep knowledge in system integration and automotive applications. Innoscience adds world-leading competence in GaN device technology. This cross-disciplinary collaboration establishes a platform for innovation across the entire value chain, accelerating GaN adoption in next-generation automotive systems.  Dr. Xiaolu Guo, Deputy General Manager of UAES, said:“UAES has been at the forefront of automotive electronics for decades, consistently responding to industry needs through innovation. GaN technology is a vital enabler for vehicle electrification. Partnering with NOVOSENSE and Innoscience allows us to integrate capabilities from device to system level, driving GaN industrialization and delivering efficient, reliable and cost-effective solutions for our customers.”  Mr. Shengyang Wang, Founder, Chairman and CEO of NOVOSENSE, commented:“Upgrading the NEV industry requires deep collaboration across the value chain. By combining UAES’s system integration expertise with Innoscience’s GaN leadership and NOVOSENSE’s IC design capabilities, we are creating a powerful synergy. This strategic partnership sets a benchmark for industry collaboration, ensuring both technological breakthroughs and market value creation.”  Dr. Jingang Wu, CEO of Innoscience, added:“The potential of GaN in automotive power electronics is only beginning to be realized. True impact will come from aligning device innovation with system requirements. We look forward to working closely with NOVOSENSE and UAES to extend the boundaries of GaN applications in automotive electrification and to translate technological advantages into tangible industry benefits.”  A Step Forward for the Industry  This strategic cooperation marks a pivotal milestone for all three companies. NOVOSENSE, a leading Chinese automotive semiconductor supplier with nearly one billion automotive ICs shipped, complements UAES’s strong system know-how and Innoscience’s GaN device leadership. Together, the three parties will strengthen the value chain, overcome application bottlenecks, and accelerate the transition of the NEV industry toward higher efficiency and sustainability.
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Release time:2025-10-09 13:53 reading:1491 Continue reading>>
ROHM and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers
  ROHM and Infineon Technologies AG have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems, and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both ROHM and Infineon. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.  "We are excited about working with ROHM to further accelerate the establishment of SiC power devices," said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. "Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization."  "ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon constitutes a significant step towards the realization of this goal, since it broadens the portfolio of solutions," said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, in charge of Power Devices Business at ROHM. "By working together, we can drive innovation, reduce complexity, and increase customer satisfaction, ultimately shaping the future of the power electronics industry."Dr. Peter Wawer, Division President Green Industrial Power at Infineon (left)and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM  As part of the agreement, ROHM will adopt Infineon’s innovative top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon's top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.  At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM's advanced DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247.  ROHM and Infineon plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This will further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.  Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using ROHM’s and Infineon’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.  About ROHM  ROHM, a leading semiconductor and electronic component manufacturer, was established in 1958. From the automotive and industrial equipment markets to the consumer and communication sectors, ROHM supplies ICs, discretes, and electronic components featuring superior quality and reliability through a global sales and development network. Our strengths in the analog and power markets allow us to propose optimized solutions for entire systems that combine peripheral components (i.e., transistors, diodes, resistors) with the latest SiC power devices as well as drive ICs that maximize their performance.  Further information is available at https://www.rohm.com  About Infineon  Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company has around 58,060 employees worldwide and generated revenue of about €15 billion in the 2024 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).
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Release time:2025-09-29 14:53 reading:758 Continue reading>>
ROHM’s PM<span style='color:red'>ICs</span> for SoCs have been Adopted in Reference Designs for Telechips’ Next-Generation Cockpits
  ROHM has announced the adoption of its PMICs in power reference designs focused on the next-generation cockpit SoCs ‘Dolphin3’ (REF67003) and ‘Dolphin5’ (REF67005) by Telechips, a major fabless semiconductor manufacturer for automotive applications headquartered in Pangyo, South Korea. Intended for use inside the cockpits of European automakers, these designs are scheduled for mass production in 2025.  ROHM and Telechips have been engaged in technical exchanges since 2021, fostering a close collaborative relationship from the early stages of SoC chip design. As a first step in achieving this goal, ROHM’s power supply solutions have been integrated into Telechips’ power supply reference designs. These solutions support diverse model development by combining sub-PMICs and DrMOS with the main PMIC for SoCs.  For infotainment applications, the Dolphin3 application processor (AP) power reference design includes the BD96801Qxx-C main PMIC for SoCs. Similarly, the Dolphin5 AP power reference design developed for next-generation digital cockpits combines the BD96805Qxx-C and BD96811Fxx-C main PMICs for SoC with the BD96806Qxx-C sub-PMIC for SoC, improving overall system efficiency and reliability.  Modern cockpits are equipped with multiple displays, such as instrument clusters and infotainment systems, with each automotive application becoming increasingly multifunctional. As the processing power required for automotive SoCs increases, power ICs like PMICs must be able to support high currents while maintaining high efficiency. At the same time, manufacturers require flexible solutions that can accommodate different vehicle types and model variations with minimal circuit modifications. ROHM SoC PMICs address these challenges with high efficiency operation and internal memory (One Time Programmable ROM) that allows for custom output voltage settings and sequence control, enabling compatibility with large currents when paired with a sub-PMIC or DrMOS.  Moonsoo Kim,  Senior Vice President and Head of System Semiconductor R&D Center, Telechips Inc.“Telechips offers reference designs and core technologies centered around automotive SoCs for next-generation ADAS and cockpit applications. We are pleased to have developed a power reference design that supports the advanced features and larger displays found in next-generation cockpits by utilizing power solutions from ROHM, a global semiconductor manufacturer. Leveraging ROHM’s power supply solutions allows these reference designs to achieve advanced functionality while maintaining low power consumption. ROHM power solutions are highly scalable, so we look forward to future model expansions and continued collaboration.”  Sumihiro Takashima,  Corporate Officer and Director of the LSI Business Unit, ROHM Co., Ltd.“We are pleased that our power reference designs have been adopted by Telechips, a company with a strong track record in automotive SoCs. As ADAS continues to evolve and cockpits become more multifunctional, power supply ICs must handle larger currents while minimizing current consumption. ROHM SoC PMICs meet the high current demands of next-generation cockpits by adding a DrMOS or sub-PMIC in the stage after the main PMIC. This setup achieves high efficiency operation that contributes to lower power consumption. Going forward, ROHM will continue our partnership with Telechips to deepen our understanding of next-generation cockpits and ADAS, driving further evolution in the automotive sector through rapid product development.”  ・ Telechips SoC [Dolphin Series]  The Dolphin series consists of automotive SoCs tailored to In-Vehicle Infotainment (IVI), Advanced Driver Assistance Systems (ADAS), and Autonomous Driving (AD) applications. Dolphin3 supports up to four displays and eight in-vehicle cameras, while Dolphin5 enables up to five displays and eight cameras, making highly suited as SoCs for increasingly multifunctional next-generation cockpits. Telechips is focused on expanding the Dolphin series of APs (Application Processors) for car infotainment, with models like Dolphin+, Dolphin3, and Dolphin5, by leveraging its globally recognized technical expertise cultivated over many years.  ・ ROHM 's Reference Design Page  Details of ROHM’s reference designs and information on equipped products are available on ROHM’s website, along with reference boards. Please contact a sales representative or visit ROHM’s website for more information.  https://www.rohm.com/contactus  ■ Power Supply Reference Design [REF67003] (equipped with Dolphin3)  Reference Board No. REF67003-EVK-001  https://www.rohm.com/reference-designs/ref67003  ■ Power Supply Reference Design [REF67005] (equipped with Dolphin5)  Reference Board No. REF67005-EVK-001  https://www.rohm.com/reference-designs/ref67005  About Telechips Inc.Telechips is a fabless company specialized in designing system semiconductors that serve as the “brains” of automotive electronic components. The South Korean firm offers reliable, high-performance automotive SoCs. In response to the industry’s transition toward SDVs (Software Defined Vehicles), Telechips is broadening its core portfolio beyond car infotainment application processors (APs) to include MCUs, ADAS, network solutions, and AI accelerators.  As a global, comprehensive automotive semiconductor manufacturer, Telechips adheres to international standards such as ISO 26262, TISAX, and ASPICE, leveraging both hardware and software expertise for future mobility ecosystems, including not only automotive smart cockpits, but also E/E architectures. What’s more, Telechips provides optimal solutions for In-Vehicle Infotainment systems (IVI), digital clusters, and ADAS, all compliant with key automotive standards (AEC-Q100, ISO 26262). Telechips has established business relationships with major automakers both domestically and internationally, supported by a strong track record of shipments.  One flagship product is the Dolphin5 automotive SoC that integrates an Arm®-based CPU, GPU, and NPU to meet high-performance requirements. As a fabless company, Telechips outsources the manufacturing of its SoCs to Samsung Electronics’ foundry, delivering high-quality semiconductor products to domestic and overseas manufacturers. For more information, please visit Telechips’ website:  https://www.telechips.com/  *Arm® is a trademark or registered trademark of Arm Limited.  TerminologyPMIC (Power Management IC)  An IC that contains multiple power supply systems and functions for power management and sequence control on a single chip. It is becoming more commonplace in applications with multiple power supply systems in both the automotive and consumer sectors by significantly reducing space and development load vs conventional circuit configurations using individual components (i.e. DC-DC converter ICs, LDOs, discretes).  SoC (System-on-a-Chip)  A type of integrated circuit that incorporates a CPU (Central Processing Unit), memory, interface, and other elements on a single substrate. Widely used in automotive, consumer, and industrial applications due to its high processing capacity, power efficiency, and space savings.  AP (Application Processor)  Responsible for processing applications and software in devices such as smartphones, tablets, and automotive infotainment systems. It includes components such as a CPU, GPU, and memory controller to efficiently run the Operating System (OS), process multimedia, and render graphics.  DrMOS (Doctor MOS)  A module that integrates a MOSFET and gate driver IC. The simple configuration is expected to reduce design person-hours along with mounting area and to achieve efficient power conversion. At the same time, the built-in gate driver ensures high reliability by stabilizing MOSFET drive.
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Release time:2024-12-20 13:56 reading:1090 Continue reading>>
Valeo & ROHM Semiconductor co-develop the next generation of power electronics
  Valeo, a leading automotive technology company, and ROHM Semiconductor, a major semiconductor and electronic component manufacturer, collaborate to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE pack™ to Valeo for future powertrain solutions.  Valeo is broadening access to efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the biggest one (eTrucks). By combining Valeo’s expertise in mechatronics, thermal management and software development with ROHM’s power modules, Valeo drives the power electronics solution forward, contributing to the performance, efficiency, and decarbonization of automotive systems worldwide.  Valeo and ROHM have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter – a key component in the propulsion systems of electric vehicles (EVs) and plug-in hybrids (PHEVs). By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging.  “This partnership marks, for Valeo Power Division, a significant step forward in delivering advanced and high-efficient power electronics,” says Xavier DUPONT, Valeo Power Division CEO. “Together, we aim to set new industry standards for high voltage inverters and accelerate the transition towards more efficient and affordable electric mobility.”  “We are pleased to support Valeo, a renowned automotive supplier, with our power semiconductors. ROHM’s TRCDRIVE pack™ provides high power density, leading to an improved power efficiency. Together, we contribute to the development of highly efficient powertrains by fostering the collaboration with Valeo,” says Wolfram HARNACK, President ROHM Semiconductor GmbH.  These evolutions are all essential to supporting the growing demand for longer range, faster charging capabilities, and, overall a high-performance and an affordable inverter for BEVs and PHEVs.  Valeo will start supplying a first series project in early 2026. Valeo and ROHM will contribute to the improvement of efficiency and downsizing of Valeo’s next generation of xEV inverters.  Background on the TRCDRIVE pack™  TRCDRIVE pack™ is a trademark for the SiC molded module developed for traction inverter drives. This product features high power density and a unique terminal configuration – solving the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours. Because SiC enables low-loss power conversion under high voltage conditions, combining Valeo's component technology, casing design and thermal management expertise with ROHM's power module creates a synergistic effect. Through both companies’ collaboration in automotive power electronics, they contribute to achieving a decarbonized society by enhancing the performance and efficiency of the motor inverter.  More information is available via:  https://www.rohm.com/news-detail?news-title=2024-06-11_news_trcdrive-pack&defaultGroupId=false  TRCDRIVE pack™ are trademarks or registered trademarks of ROHM Co., Ltd.  About Valeo  Valeo is a technology company and partner to all automakers and new mobility players worldwide. Valeo innovates to make mobility safer, smarter and more sustainable. Valeo enjoys technological and industrial leadership in electrification, driving assistance systems, reinvention of the interior experience and lighting everywhere. These four areas, vital to the transformation of mobility, are the Group's growth drivers.  Valeo in figures: 22 billion euros in sales in 2023 | 109 600 employees, 28 countries, 159 plants, 64 research and development centers and 19 distribution platforms at June 30, 2024.  https://www.valeo.com/  Valeo is listed on the Paris stock Exchange.
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Release time:2024-11-29 10:49 reading:632 Continue reading>>
ROHM’s New PWM Controller <span style='color:red'>ICs</span> with SOP Package for Power Supply in a Wide Variety of Industrial Applications
  ROHM has developed external FET-type controller ICs utilizing PWM current control mode optimized for AC-DC power supply in various industrial applications. Mass production has begun for four variants designed to drive a wide range of power semiconductors: the BD28C55FJ-LB for low-voltage MOSFETs, BD28C54FJ-LB for medium- to high-voltage MOSFETs, BD28C57LFJ-LB for IGBTs, and BD28C57HFJ-LB for SiC MOSFETs.  Although the global semiconductor shortage is beginning to ease, the supply of semiconductor components for power supplies in industrial applications continues to lag behind demand. This is particularly true for PWM controller ICs, where the limited number of manufacturers has resulted in chronic shortages, leading to numerous requests for product development.  In response, ROHM has developed PWM controller ICs that address the ongoing supply issue by meeting the industrial market’s stringent package and performance requirements. Depending upon the input AC voltage range of the application, a wide variety of semiconductors are used for power supply circuit. Each of these semiconductors demand different undervoltage lock out levels to prevent thermal runaway in case of supply/gate voltage drop. To solve this issue, ROHM has developed 4 variants with different undervoltage lock out levels.  The new products feature an input voltage range of 6.9V to 28.0V, circuit current up to 2.0mA, maximum startup current of 75µA, and a maximum duty cycle of 50%, offered in the standard SOP-J8 package (equivalent to the JEDEC SOIC8). The products are pin to pin compatible to standard products commonly used in power supply circuits, thus reducing re-design and modification efforts. All variants are equipped with a self-recovery-type undervoltage lockout function (UVLO) with voltage hysteresis. This significantly improves application reliability by reducing the threshold voltage error to ±5%, compared to the typical ±10% of standard products.  At the same time, these ICs are designated for long-term supply, thus ensuring continuous operation of long-life industrial equipment. Going forward, the lineup will be further expanded to include products suitable to drive high-voltage MOSFETs and GaN devices. More variants to support a maximum duty cycle of 100% are also being planned.  Application ExamplesIndustrial equipment: AC-DC power supplies, motor drive inverters, and other AC-powered devices  Product Information  Applicable Part Nos: BD28C54FJ-LB, BD28C55FJ-LB, BD28C57HFJ-LB, BD28C57LFJ-LB  TerminologyPWM Control Type  Short for Pulse Width Modulation, a method for controlling power using semiconductors. The output power is controlled by varying the ratio of ON and OFF times within a fixed cycle.  Duty Cycle  The proportion of ON and OFF times as percentage of the switching period is known as ON- and OFF-duty cycle, respectively. It is common to refer to the ON-time ratio as the duty cycle. Duty Cycle (%) = Pulse Width (t) / Period (T).  Self-Recovery Undervoltage Lockout Function (UVLO) with Voltage Hysteresis  This function safety stops IC operation before the circuit inside the IC becomes abnormal when the input voltage drops below a threshold. For self-recovery types, the IC can become unstable by repeatedly stopping and starting near the threshold voltage, so a protection circuit with hysteresis is used to create a voltage difference between the stop and restart points.
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Release time:2024-10-08 14:42 reading:933 Continue reading>>
What are TVS diodes in safeguarding electronics
  In today’s interconnected world, electronic devices and systems are ubiquitous, powering our homes, workplaces, and communication networks. However, these devices are vulnerable to voltage transients—brief surges in voltage that can occur due to lightning strikes, electrostatic discharge (ESD), or switching transients in the electrical system.  To protect sensitive electronic components from such transients, Transient Voltage Suppressor TVS diodes play a crucial role. This article explores the functionality, applications, and importance of TVS diodes in safeguarding electronics.  What is a Transient Voltage Suppressor (TVS) Diode?A Transient Voltage Suppressor (TVS) diode is a semiconductor device used to protect sensitive electronic components from voltage spikes or transient voltages that could potentially damage them. These spikes can be caused by events such as lightning strikes, electrostatic discharge (ESD), or switching transients in the electrical system.  The TVS diode operates by providing a low-impedance path to divert excess voltage away from the protected components, thus limiting the voltage across them. When a transient voltage exceeds the breakdown voltage (also known as the clamping voltage or avalanche voltage) of the TVS diode, it starts to conduct, effectively shunting the excess current away from the protected circuit.  What are the features of TVS diodes?Fast Response Time: TVS diodes respond quickly to transient events, providing protection within nanoseconds to microseconds.  Low Clamping Voltage: The clamping voltage is the maximum voltage that the TVS diode allows to pass through to the protected circuit. It is typically lower than the voltage tolerance of the protected components, ensuring they remain safe.  High Surge Current Capability: TVS diodes are designed to handle high surge currents associated with transient events, protecting the circuit from damage.  Low Leakage Current: When not conducting, TVS diodes have low leakage current, minimizing power consumption and ensuring minimal impact on the protected circuit during normal operation.  Robustness: TVS diodes are robust devices, able to withstand multiple transient events without degradation in performance.  What are the applications of TVS diode?TVS diodes are commonly used in various applications, including:  Protection of integrated circuits (ICs), microcontrollers, and other semiconductor devices from ESD and voltage transients.  Protection of communication ports (such as USB, Ethernet, HDMI) and data lines in electronic equipment.  Surge protection for power supply lines, signal lines, and sensor inputs in industrial and automotive electronics.  Protection of sensitive electronic equipment against lightning-induced surges in telecommunications, power distribution, and other infrastructure.  What’s the difference between TVS Diodes and Zener Diodes?TVS (Transient Voltage Suppressor) diodes and Zener diodes are both semiconductor devices used for voltage regulation, but they serve different purposes and operate in different ways. Here are the key differences between TVS diodes and Zener diodes:  Purpose:  • TVS Diodes: TVS diodes are primarily used for transient voltage suppression, meaning they protect electronic circuits from voltage spikes or transients caused by events like lightning strikes, electrostatic discharge (ESD), or inductive switching. Their main function is to provide surge protection and prevent damage to sensitive components.  • Zener Diodes: Zener diodes are used for voltage regulation and voltage reference. They operate in the breakdown region and maintain a constant voltage across their terminals when reverse biased. Zener diodes are commonly used in voltage regulation circuits, voltage clamping circuits, and voltage reference circuits.  Operating Principle:  • TVS Diodes: TVS diodes operate by avalanche breakdown or Zener breakdown. When the voltage across a TVS diode exceeds its breakdown voltage, it starts to conduct heavily, providing a low-impedance path for excess current and diverting it away from the protected circuit.  • Zener Diodes: Zener diodes operate in the reverse-biased breakdown region, where they maintain a constant voltage (known as the Zener voltage) across their terminals. They regulate voltage by allowing current to flow in the reverse direction when the applied voltage exceeds the Zener voltage.  Voltage Characteristics:  • TVS Diodes: TVS diodes typically have a very low clamping voltage (Vc) and are designed to handle high surge currents associated with transient events. They are optimized for fast response times and high-energy absorption capabilities.  • Zener Diodes: Zener diodes have a well-defined breakdown voltage (Vz) at which they operate. The voltage across a Zener diode remains relatively constant over a wide range of currents when reverse biased, making them suitable for voltage regulation applications.  Applications:  • TVS Diodes: TVS diodes are used in applications requiring protection against voltage transients, such as in power supplies, communication ports (USB, Ethernet), data lines, and electronic equipment exposed to harsh environments or prone to ESD.  • Zener Diodes: Zener diodes find applications in voltage regulation circuits, voltage references, voltage clamping circuits, reverse voltage protection, and precision voltage measurement circuits.  How do TVS diodes work?  TVS diodes work by providing a low-impedance path for excess voltage, diverting it away from sensitive electronic components and limiting the voltage across them to safe levels. They operate based on two main mechanisms: avalanche breakdown and Zener breakdown. Here’s how TVS diodes work:  Avalanche BreakdownTVS diodes are typically fabricated with a highly doped semiconductor material that has a narrow depletion region. When the diode is reverse-biased (i.e., the voltage applied across it is in the opposite direction of its normal operation), the electric field across the depletion region increases.  If the applied reverse voltage exceeds a certain threshold known as the breakdown voltage (also called clamping voltage or avalanche voltage), the strong electric field can accelerate charge carriers (electrons and holes) to high energies.  These high-energy charge carriers collide with other atoms in the semiconductor lattice, generating additional charge carriers through impact ionization. This process cascades, resulting in a sudden increase in current flow through the diode.  As a result, the TVS diode effectively clamps the voltage across its terminals at the breakdown voltage, providing a low-impedance path for excess current and limiting the voltage seen by the protected circuit.  Zener BreakdownIn addition to avalanche breakdown, some TVS diodes may also utilize Zener breakdown to provide transient voltage suppression. Zener breakdown occurs when the reverse-biased diode operates in its Zener breakdown region.  In this region, the diode behaves as a voltage regulator, maintaining a relatively constant voltage (known as the Zener voltage) across its terminals. When the applied reverse voltage exceeds the Zener voltage, the diode starts conducting heavily, effectively clamping the voltage across it.  What causes a TVS diode to fail?TVS diodes are designed to withstand high levels of transient voltage and provide protection to sensitive electronic components. However, like any electronic component, TVS diodes can fail under certain conditions. Here are some common causes of TVS diode failure:  Overvoltage Conditions: If the transient voltage exceeds the maximum rated clamping voltage (avalanche or Zener breakdown voltage) of the TVS diode, it may fail to suppress the transient effectively. This can happen if the transient event is exceptionally severe or if the TVS diode is underspecified for the application.  Overcurrent Conditions: Excessive current flowing through the TVS diode, either due to a high-energy transient event or a sustained fault condition, can cause the diode to fail. Overcurrent can lead to thermal overstress, causing the diode to overheat and potentially short or open circuit.  Reverse Polarity: Applying a reverse voltage beyond the maximum reverse voltage rating of the TVS diode can cause it to fail. This can occur due to improper installation or incorrect wiring in the circuit.  End-of-Life Wear-Out: Like all semiconductor devices, TVS diodes have a limited lifespan, and their performance may degrade over time due to factors such as aging, temperature cycling, and electrical stress. As the diode approaches the end of its life, its ability to suppress transients effectively may diminish, leading to failure.  Excessive Power Dissipation: TVS diodes are specified with maximum power dissipation ratings. Exceeding these ratings, either due to sustained overvoltage conditions or prolonged exposure to transient events, can cause the diode to overheat and fail.  Manufacturing Defects: Rarely, TVS diodes may fail due to manufacturing defects such as material impurities, processing errors, or incomplete encapsulation. These defects can compromise the electrical and thermal performance of the diode, leading to premature failure.  Improper Handling or Installation: Mishandling or improper installation of TVS diodes, such as mechanical stress during assembly, soldering defects, or exposure to corrosive environments, can lead to physical damage or degradation of the diode, resulting in failure.  ConclusionTVS diodes are essential components in protecting electronic devices and systems from voltage transients. Their ability to clamp voltages and divert excess current away from sensitive components plays a vital role in ensuring the reliability and durability of modern electronics. As the demand for high-performance and reliable electronic products continues to grow, the importance of TVS diodes in safeguarding electronics will only increase, making them indispensable in today’s interconnected world.
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Release time:2024-07-16 13:08 reading:1012 Continue reading>>
Fibocom Drives the Rapid Growth in the Economics of IoT Scale with Ultra-compact size Cat 1 bis Module MC610-GL at MWC Shanghai 2024
  Fibocom (Stock code: 300638), a global leading provider of IoT (Internet of Things) wireless solutions and wireless communication modules, announces the new member of its LTE Cat 1 bis module portfolio featuring high reliability, ultra-compact size and cost-effectiveness at MWC Shanghai 2024. The MC610-GL is positioned to foster the economics of IoT scale in vertical markets across asset tracking, E-mobility, AMI (Advanced Metering Infrastructure), etc.  The Global Cellular IoT Module market shows a 7% year-over-year (YoY) growth in Q1 2024, according to the latest reports by IoT Analytics. Despite ongoing inventory and demand issues in several other regions globally, technologies like 5G and LTE Cat-1 bis have seen a combined market growth of 67% year-over-year, signifying their substantial contribution to the cellular IoT module market's overall growth. “The statistics have verified Cat 1 bis’ driving forces in bringing affordable and reliable wireless connectivity service to a diversified IoT landscape, even though 5G remains strong performance in the data-intensive scenarios, and Cat 1 bis takes the lead in the mainstream low and medium speed market thanks to the worldwide 4G infrastructure,” said Kevin Guan, Director of MTC Product Marketing at Fibocom. “Without a doubt, we are optimistic in expanding the utilization of Cat 1 bis technology in segment areas and providing the value-added reference design service to industry customers. Looking forward, the MC610-GL is expected to address its top performance in the global market and accelerate the large-scale IoT deployment worldwide.”  Developed from the UNISOC 8910DM platform, the MC610-GL supports major carrier frequency bands worldwide and complies with rich network standards, thus ensuring uninterrupted wireless connection anywhere, anytime, especially catering to asset tracking scenarios. It adopts an ultra-compact LCC+LGA form factor design measured at 24.2 x 26.2 x 2.1mm with dual-mode (4G+2G) supported, providing great convenience for customers to switch from LTE Cat M to Cat 1 bis at the minimum investment. Equipped with rich standard interfaces, the module empowers a wide range of low-to-medium speed IoT industries with up to 10Mbps downlink data transmission rate while conserving significant cost. Leveraging the industry capabilities within Fibocom, customers are catered to the reference design service and support, reducing the lead time to market. In addition, regional versions for EMEA (MC610-EU) and Latin America (MC610-LA) are flexibly adjustable in request to customers’ cost concerns.
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Release time:2024-07-03 13:57 reading:1426 Continue reading>>

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