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ROHM Develops the Industry's Smallest* <span style='color:red'>CMOS</span> Op Amp Optimized

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ROHM Develops the Industry's Smallest* CMOS Op Amp Optimized

　　ROHM has developed an ultra-compact 1.8V - 5V, rail-to-rail CMOS operational amplifier (op amp) - the TLR377GYZ. It is optimized for amplifying signals from sensors such as temperature, pressure, flow rate, used in smartphones, small IoT devices, and similar applications.　　The size of smartphones and IoT devices continues to decrease - requiring smaller components. To accurately amplify small signals as needed in high precision sensing, op amps must improve low input offset voltage and noise performance while continuing to shrink the form factor.　　The TLR377GYZ succeeds in balancing miniaturization with high accuracy (which has been difficult to achieve with conventional op amps) by further evolving proprietary circuit design, process, and packaging technologies cultivated over many years.　　Op amps’ input offset voltage and noise generation degrade amplification accuracy and can be suppressed by increasing the size of the built-in transistors - but at the expense of miniaturization. In response, ROHM developed proprietary circuits which achieve a maximum offset voltage as low as 1mV without increasing the size of the transistors. In addition, proprietary process technology greatly reduce flicker noise, while ultra-low noise is achieved with an input equivalent noise voltage density of 12nV/√Hz by optimizing the resistive components at the element level. Furthermore, the new product adopts a WLCSP (Wafer Level Chip Scale Package) with a ball pitch of just 0.3mm utilizing original packaging technology. This reduces size by approximately 69% compared to conventional products and 46% over existing compact products.　　The IC-mounted conversion board that can replace SSOP6 packages is also offered to support replacement considerations and initial evaluation. Both the new product and conversion board are available for purchase through online distributors. In addition, the high accuracy SPICE model - called ROHM Real Model - is available on ROHM’s website for verification simulations.　　Going forward, in addition to greater miniaturization and accuracy, ROHM will continue to improve op amp performance by reducing power consumption further utilizing proprietary ultra-low current consumption technology.　　Key Product FeatureA shut down function required by mobile devices is built in, reducing power consumption during standby mode.　　Application Examples• Smartphones, compact IoT devices equipped with measurement sensor amps, etc.　　High Accuracy Simulation Models: ROHM Real ModelsROHM Real Models are new high accuracy SPICE models that utilizes original model-based technology to faithfully reproduce the electrical and temperature characteristics of the actual IC, resulting in a perfect match between the IC and simulation values. This ensures reliable verification, contributing to more efficient application development - for example by preventing rework after prototyping. ROHM Real Models are now available on ROHM’s website.　　TerminologyInput Offset Voltage　　The error voltage that occurs between the input terminals of an op amp.　　Flicker Noise　　Noise inherent to electronic components such as semiconductors. Power is inversely proportional to frequency, so the lower the frequency the greater the power. Also called 1/f noise or pink noise. Other types of noise include thermal (i.e. Johnson-Nyquist, white) noise.　　Equivalent Input Noise Voltage Density　　The value obtained by short-circuiting the input terminals and referring the noise voltage density appearing at the output to the input terminals, i.e., since amplifiers have gain (amplification factor), dividing the output noise voltage density by the gain allows for a fair evaluation of the amplifier’s intrinsic noise characteristics.　　ROHM Real Model　　A high-accuracy simulation model that succeeds in achieving a perfect match between the actual IC and simulation values utilizing ROHM’s proprietary model-based technology.

Key word：

ROHM

Release time：2024-08-13 14:03 reading：613 Continue reading>>

Top 10 <span style='color:red'>CMOS</span> image sensor manufacturers in the world

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Top 10 CMOS image sensor manufacturers in the world

Key word：

CMOS

Release time：2023-09-04 15:43 reading：2501 Continue reading>>

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Panasonic Develops Organic Photoconductive Film (OPF) CMOS Image Sensor Technology

　　Panasonic Holdings Corporation announced that it has developed excellent color reproduction technology that suppresses color crosstalk by thinning the photoelectric conversion layer using the high light absorption rate of the Organic Photoconductive File (OPF) and by using electrical pixel separation technology. In this technology, the OPF part that performs photoelectric conversion and the circuit part that stores and readouts the electric charge are completely independent. This unique layered structure dramatically reduces the sensitivity of each pixel in green, red, and blue in wavelength regions outside the target range. As a result, color crosstalk is reduced, excellent spectral characteristics are obtained, and accurate color reproduction is made possible regardless of the type of light source.　　Abstract　　Conventional Bayer array-type silicon image sensors do not have sufficient color separation performance for green, red, and blue. Therefore, for example, under light sources that have peaks at specific wavelengths, such as cyan light and magenta light, it has been difficult to accurately reproduce, recognize, and judge colors.　　Our OPF CMOS image sensor has a unique structure in which the photoelectric conversion part that converts light into an electric signal is an organic thin film, and the function of storing and reading out the signal charge is performed in the circuit part, which are completely independent from each other (Figure 1). As a result, unlike with conventional silicon image sensors, it is possible to provide photoelectric conversion characteristics that do not depend on the physical properties of silicon. The OPF with its high light absorption rate enables the thinning of the photoelectric conversion part ((1) Photoelectric conversion film thinning technology). By providing a discharge electrode at the pixel boundaries, the signal charge due to the incident light at the pixel boundaries is discharged, and the signal charge from adjacent pixels is suppressed ((2) Electrical pixel isolation technology). In addition, since the under part of the OPF is covered with the pixel electrode for collecting the signal charge generated in the OPF and the electrode for discharging the charge, incident light that cannot be absorbed by the OPF does not reach the circuit side. This suppresses the transmission ((3) Light transmission suppression structure). With the above three technologies, it is possible to suppress light and signal charges that enter from adjacent pixels. As a result, color crosstalk can be reduced to an almost ideal shape, as shown in the spectral characteristics shown in Figure 2, and accurate color reproduction is achieved regardless of the color of the light source (Figure 3).　　This technology enables accurate color reproduction and inspection even in environments where it is difficult for conventional image sensors to reproduce the original colors, such as plant factories that use magenta light. It is also possible to accurately reproduce the colors of substances with subtle color changes, such as living organisms. It can also be applied to managing skin conditions, monitoring health conditions, and inspecting fruits and vegetables. Furthermore, in combination with the high saturation characteristics and global shutter function of our OPF CMOS image sensor*, it can contribute to highly robust imaging systems that are highly tolerant of changes in light source type, illuminance, and speed.

Key word：

Panasonic

Release time：2023-04-21 14:40 reading：3606 Continue reading>>

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AMEYA360:Panasonic Develops Organic Photoconductive Film (OPF) CMOS Image Sensor Technology

　　Panasonic Holdings Corporation announced that it has developed excellent color reproduction technology that suppresses color crosstalk by thinning the photoelectric conversion layer using the high light absorption rate of the Organic Photoconductive File (OPF) and by using electrical pixel separation technology. In this technology, the OPF part that performs photoelectric conversion and the circuit part that stores and readouts the electric charge are completely independent. This unique layered structure dramatically reduces the sensitivity of each pixel in green, red, and blue in wavelength regions outside the target range. As a result, color crosstalk is reduced, excellent spectral characteristics are obtained, and accurate color reproduction is made possible regardless of the type of light source.　　Conventional Bayer array-type silicon image sensors do not have sufficient color separation performance for green, red, and blue. Therefore, for example, under light sources that have peaks at specific wavelengths, such as cyan light and magenta light, it has been difficult to accurately reproduce, recognize, and judge colors.　　Our OPF CMOS image sensor has a unique structure in which the photoelectric conversion part that converts light into an electric signal is an organic thin film, and the function of storing and reading out the signal charge is performed in the circuit part, which are completely independent from each other (Figure 1). As a result, unlike with conventional silicon image sensors, it is possible to provide photoelectric conversion characteristics that do not depend on the physical properties of silicon. The OPF with its high light absorption rate enables the thinning of the photoelectric conversion part ((1) Photoelectric conversion film thinning technology). By providing a discharge electrode at the pixel boundaries, the signal charge due to the incident light at the pixel boundaries is discharged, and the signal charge from adjacent pixels is suppressed ((2) Electrical pixel isolation technology). In addition, since the under part of the OPF is covered with the pixel electrode for collecting the signal charge generated in the OPF and the electrode for discharging the charge, incident light that cannot be absorbed by the OPF does not reach the circuit side. This suppresses the transmission ((3) Light transmission suppression structure). With the above three technologies, it is possible to suppress light and signal charges that enter from adjacent pixels. As a result, color crosstalk can be reduced to an almost ideal shape, as shown in the spectral characteristics shown in Figure 2, and accurate color reproduction is achieved regardless of the color of the light source (Figure 3).　　This technology enables accurate color reproduction and inspection even in environments where it is difficult for conventional image sensors to reproduce the original colors, such as plant factories that use magenta light. It is also possible to accurately reproduce the colors of substances with subtle color changes, such as living organisms. It can also be applied to managing skin conditions, monitoring health conditions, and inspecting fruits and vegetables. Furthermore, in combination with the high saturation characteristics and global shutter function of our OPF CMOS image sensor*, it can contribute to highly robust imaging systems that are highly tolerant of changes in light source type, illuminance, and speed.

Key word：

Panasonic,AMEYA360

Release time：2023-04-03 10:52 reading：2321 Continue reading>>

<span style='color:red'>CMOS</span> Image Sensor Sales Stay on Record-Breaking Pace

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CMOS Image Sensor Sales Stay on Record-Breaking Pace

Embedded imaging applications in cars, security, machine vision, medical, virtual reality, and other new uses will offset slow growth in camera phones, says new report.The spread of digital camera applications in vehicles, machine vision, human recognition and security systems, as well as for more powerful camera phones will drive CMOS image sensor sales to an eighth straight record-high level this year with worldwide revenues growing 10% to $13.7 billion, following a 19% surge in 2017, according to IC Insights’ 2018 O-S-D Report—A Market Analysis and Forecast for Optoelectronics, Sensors/Actuators, and Discretes. The new 375-page report shows nothing stopping CMOS image sensors from continuing to set record-high annual sales and unit shipments through 2022 (Figure 1).Figure 1CMOS image sensors continue to take marketshare from charge-coupled devices (CCDs) as embedded digital-imaging capabilities expand into a wider range of systems and new end-use applications, says the 2018 O-S-D Report. With the smartphone market maturing, sales growth in CMOS image sensors slowed to 6% in 2016, but strong demand in other imaging applications played a major factor in boosting revenues by 19% to $12.5 billion last year. Sales of CCD and other image sensor technologies fell 2% in 2017 to about $1.6 billion after rising 5% in 2016, according to the new IC Insights report.Overall, CMOS image sensors grabbed 89% of total image sensor sales in 2017 compared to 74% in 2012 and 54% in 2007. Unit shipments of CMOS imaging devices represented 81% of total image sensors sold in 2017 compared to 64% in 2012 and 63% in 2007. New CMOS designs keep improving for a variety of light levels (including near darkness at night), high-speed imaging, and greater resolution as well as integrating more functions for specific applications, such as security video cameras, machine vision in robots and cars, human recognition, hand-gesture interfaces, virtual/augmented reality, and medical systems.In new smartphones, CMOS image sensors are also seeing a new wave of growth with the increase of dual-lens camera systems (using two sensors) for enhanced photography. Cellular camera phones accounted for 62% of CMOS image sensor sales in 2017, but that marketshare is forecast to slip to 45% in 2022. Automotive CMOS image sensors are projected to grow the fastest among major end-use applications through the five-year forecast shown in the new O-S-D Report, rising by a compound annual growth rate (CAGR) of 38.4% to about 15% of total CMOS image sensor sales in 2022 ($2.8 billion) while camera phone-generated revenues are expected to rise by a CAGR of just 2.2% to $8.6 billion that year.

Key word：

CMOS

Release time：2018-05-09 00:00 reading：1059 Continue reading>>

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Room-temp Laser-on-CMOS Achieved

　　The Nanophotonics Lab at Arizona State University (Tempe), working with Tsinghua University (Beijing), has demonstrated an on-chip CMOS communications laser that the researchers say is the first to lase at room temperature. The team built the proof-of-concept device without III-V compounds by placing a monolayer of molybdenum ditelluride over a nanobeam silicon cavity. Others have achieved monolayer lasing with similar techniques, but only at cryogenic temperatures.　　Molybdenum ditelluride (MoTe2) — a compound of molybdenum and tellurium called a transition-metal dichalcogenide — is a semiconductor that can fluoresce with a bandgap in a region enabling infrared lasing at industry-standard communications wavelengths. When crystallized into atomically thin monolayers, it is flexible, crack-resistant, nearly transparent, and CMOS-compatible.　　“Our nanobeam cavity is fabricated from a standard CMOS silicon-on-insulator wafer,” Cun-Zheng Ning, the Arizona State electrical-engineering professor who led the team, told EE Times. “We did not use any high-temperature processing, which is often a concern for CMOS. The transfer of the MoTe2 layer is a simple, mechanical process.　　“In other words, we use nothing else but standard processing steps common in CMOS industry.”　　As shown in an artist’s rendering of the nanolaser architecture (see figure), the MoTe2monolayer is placed over a thin silicon beam with holes etched in it. The configuration succeeds in efficiently amplifying light enough to enable lasing in the infrared communications bands.　　Ning and Tsinghua researchers Yongzhuo Li, Jianxing Zhang, and Dandan Huang describe the work in detail in “Room-temperature Continuous-wave Lasing from Monolayer Molybdenum Ditelluride Integrated with a Silicon Nanobeam Cavity, published in Nature Nanotechnology. They note that the gain medium amplifies photons, while the cavity confines them. The combination produces excitons in the molybdenum telluride that are 100 times stronger than in conventional semiconductors, enabling room-temperature lasing in the common infrared communications wavelengths. The researchers add that the techniques can be modified to sense the light produced, thus potentially enabling both photonic emitters and photonic receivers to reside on the same CMOS chip.　　As is the usual practice, the proof-of-concept chip used a very low-power conventional laser to pump the molybdenum ditelluride CMOS laser. “Today it is pumped by a continuous-wave helium–neon laser emitting at a 633-nanometer wavelength,” Ning told EE Times, adding that the required threshold for pumping was “much less than that from a red laser pointer.”　　The researchers’ next target is to initiate and modulate lasing electrically for on-chip photonics. “Designing an efficient current injection scheme is the key for a successful demonstration of a laser under electrical injection,” Ning told EE Times. “We are currently working on both the design and test fabrication.

Key word：

Room-temp Laser-on-CMOS

Release time：2017-08-08 00:00 reading：1069 Continue reading>>

IBM Optics Go <span style='color:red'>CMOS</span>

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IBM Optics Go CMOS

　　Researchers from IBM this week are describing a breakthrough in 60-gigabit-per-second (Gb/s) optical interconnect that the company claims will lead to broad replacement of costlier 56 Gb/s copper interconnects.　　At the 2017 Symposia on VLSI Technology and Circuits, in Kyoto, Japan, scientists from IBM Research in Zurich will describe an inexpensive 60 Gb/s optical receiver that is expected to be followed next year by a matching optical transmitter. Together, the two devices will form a complete optical-transceiver built in CMOS at costs that the company expects to be lower than the costs of a copper interconnect.　　"We are developing a single lane 60-Gigabit per second optical receiver with non-return to zero (NRZ) signaling targeting low cost multi-mode vertical-cavity surface-emitting laser (VCSEL) based links," Alessandro Cevrero, an engineer at IBM, told EE Times in advance of the symposium.　　"The power is way lower than our competitors, ~120mW for the receiver and eventually below 300mW for the full transceiver," Cevrero said. "Also, its compact CMOS footprint and low power consumption means it can be moved closer to the processor or switch chip and eventually even be put in the same package or even on processor chip die, providing high bandwidth connectivity directly from the processor or switch chip spanning up to 100-meters. This covers links from processor-to-processor, processor-to-memory, from drawer-to-drawer inside a rack and from a rack to a tier-1 Internet switch."　　Cevrero said that implementing the devices in CMOS enabled IBM to essential double transmission speed, essentially cutting the costs per Gigabit per second by two. "Some people believed that a SiGe solution was required to achieve good optical sensitivity at data rates above 32Gb/s," Cevero said. "Our work demonstrates that CMOS can achieve the same sensitivity, but at much lower power consumption.”　　The 60 Gb/s optical link IBM demonstrated still depends on discrete III-V photodetectors (for the receiver) and discrete III-V lasers (for the transmitter) together forming a transceiver that is otherwise all-CMOS. Others, such as Intel (which offers a 25-Gigabit per second optical transceiver), use silicon photonics to modulate the light from a III-V lasers. Intel combines four such channels to achieve 100-Gbits per second today, but at much higher cost and power consumption, according to IBM. Intel, however, is shooting for the same goal as IBM by 2020.　　IBM's current prototype runs at a wavelength of 850 nanometers, which is the standard wavelength for VCSEL-based multi-mode optical links, making it suitable for processor-to-memory, processor-to-processor and server-to-server communications. Once the complete transceiver is demonstrated later this year or early 2018, the price crossover point will have been reached, according to Thomas Toifl, manager of the high-speed Interconnects group at IBM Research in Zurich.　　"So far, optical links were always pushed out due to their higher costs, but now we have reached the point where optics are at the same price as electrical links," Toifl told EE Times in advance of the VLSI Symposium. "Electrical links, however, need complex equalization when we go to higher data rates, and hence require more power. Also, their distance is limited to about two meters of cable compared to 100 meters for our optical solution."　　Toifl also claimed IBM's "breakthrough" CMOS photonics technology provides superior sensitivity ( -9dBm) and is ideal for the high throughput requirements of cloud computing. The team also claims to have pushed its existing CMOS circuitry to 70+ Gigabits per second already, but is waiting for the III-V photodiodes and vertical-cavity surface-emitting lasers to catch up before publicizing it.　　IBM has already demonstrated graphene photodetectors on silicon-on-insulator substrates and silicon-germanium lasers, but Toifl claims their next-generation all-CMOS transceivers will not require germanium, making them exceptionally cool running.

Key word：

IBM,CMOS

Release time：2017-06-09 00:00 reading：1280 Continue reading>>

model	brand	Quote
TL431ACLPR	Texas Instruments
CDZVT2R20B	ROHM Semiconductor
MC33074DR2G	onsemi
RB751G-40T2R	ROHM Semiconductor
BD71847AMWV-E2	ROHM Semiconductor

model	brand	To snap up
BP3621	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
BU33JA2MNVX-CTL	ROHM Semiconductor
ESR03EZPJ151	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
TPS63050YFFR	Texas Instruments

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