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ROHM Launches an Ultra-Compact Wireless Power Chipset for Wearables

　　ROHM has developed a wireless power supply IC chipset consisting of the receiver - ML7670 - and transmitter - ML7671 - compatible with Near Field Communication (NFC) technology for compact wearables such as smart rings and smart bands as well as peripheral devices like smart pens.　　The smart ring market has seen rapid growth in recent years, primarily in healthcare and fitness applications. However, for extremely small ring-shaped devices worn on the finger, wired charging is impractical, while conventional Qi wireless charging standard is difficult to implement due to constraints such as coil size. This has driven increased demand for a proximity-based power transfer method capable of reliably charging ultra-compact devices.　　In response, NFC-based charging, which operates at the high-frequency 13.56MHz band that enables antenna miniaturization, is attracting increased attention, with adoption accelerating in next-generation wearables. Following the successful commercialization of the 1W ML7660/ML7661, ROHM has developed the ML7670/ML7671 chipset optimized for even smaller devices.　　This new chipset builds on the proven receiver - ML7660 - and transmitter - ML7661. The maximum power transfer is specified at 250mW, while peripheral components such as the switching MOSFETs required to supply power to the charging IC are built in. The result is a solution optimized for both mounting area and power transfer efficiency in the power class demanded by compact wearable devices, especially smart rings.　　The ML7670 power receiver IC achieves a maximum power transfer efficiency of 45% in the 250mW low output range – all in an industry-leading form factor of just 2.28 × 2.56 × 0.48mm. A key feature of the new chipset is superior performance that surpasses the efficiency of comparable products in the same class by optimizing elements such as coil matching, rectifier circuitry, and reduced losses in switching devices.　　What's more, all firmware required for wireless power delivery is embedded directly within the IC, eliminating the need for a host MCU. This significantly reduces board space along with development workload in device design.　　Compliance with NFC Forum (WLC 2.0) enables power transfer while maintaining compatibility with existing devices, positioning the chipset as a core element in the expanding NFC wireless power ecosystem.　　The new chipset is already in mass production. Furthermore, it has been adopted in SOXAI RING 2, the latest model launched on December 10th, 2025, by SOXAI, Inc. (“SOXAI” is pronounced “SOK-sai”.), the Japanese developer and distributor of the original sleep monitoring ring SOXAI RING. Evaluation boards and reference designs are also offered to facilitate integration. For more information, please contact a sales representative or submit an inquiry via the contact page on ROHM’s website.　　Going forward, ROHM will continue to promote device development that leverages miniaturization and low-power consumption technologies essential for wearable devices, contributing to improved user convenience and the continued growth of the wearable market.　　Specifications　　Case Study: SOXAI RING 2 Adoption Example SOXAI RING is the only smart ring for sleep management developed in Japan capable of accurately capturing and analyzing sleep data. It incorporates cutting-edge technologies such as an optical vital sensor, temperature sensor, accelerometer, Bluetooth® Low Energy communication, and NFC wireless charging functionality.　　The latest model, SOXAI RING 2, is equipped with Deep Sensing™, a proprietary photoplethysmography (PPG) sensor that significantly improves measurement accuracy, enabling the visualization of physical health changes with far greater depth and precision.　　Bluetooth® is a registered trademark of Bluetooth SIG, Inc. in the US.　　Deep Sensing™ is a trademark or registered trademark of SOXAI, Inc.

Key word：

ROHM

Release time：2026-04-29 10:03 reading：253 Continue reading>>

Trade news

MicroLED Gains Focus as Seoul Semiconductor Plans $180M AR Investment, Aledia Reports Breakthrough

　　Amid mounting margin pressure and slowing growth in the LED industry, players are moving beyond traditional segments in search of new momentum, with MicroLED emerging as a key focus. According to MicroLED-info, Seoul Semiconductor plans to invest KRW 250 billion (around $180 million) over the next five years, primarily in the R&D and production of microLED microdisplay modules for AR applications.　　The report suggests that the company has embarked on a government-approved restructuring plan as its core LED package business faces mounting pressure from falling prices and weakening profitability. Under the initiative, the new displays will be built on Seoul Semiconductor’s proprietary WICOP (Wafer Integrated Chip on PCB) technology, the report adds.　　As noted by Maeil Ilbo, founded in 1992, Seoul Semiconductor supplies LED packages across lighting, automotive, and IT, and holds about a 4.8% global share in the optoelectronics market. Despite its proprietary wire-free WICOP technology, the company has come under pressure from persistent price declines and softer demand, weighing on margins, the report explains.　　French MicroLED Startup Achieves Key Milestone　　On the other hand, French startup Aledia, according to MicroLED-info, has successfully demonstrated a fully functional monolithic RGB epitaxial wafer, marking a key milestone for the technology. The achievement validates the company’s end-to-end monolithic RGB process, enabling red, green, and blue emission from a single epi wafer fabricated in a single run, the report notes.　　According to the company, its proprietary nanowire-based architecture can grow nanowires in a single processing step, with diameters ranging from 100 nm to 400 nm depending on the target wavelength, enabling full RGB capability within one unified structure.　　On device performance, the company demonstrated a 2.5 μm sub-pixel pitch—equivalent to a 5.0 μm × 5.0 μm pixel size—and outlined a roadmap to further shrink this to 2.0 μm for both monochrome and monolithic RGB displays, MicroLED-info suggests.　　In parallel, Aledia has validated its 9V microLED devices on 200 mm silicon wafers, including 15×30 μm blue emitters on the same platform. The company also confirmed the commercial availability of its 3D-Nano microLED technology built on 200 mm silicon in February, the report adds.

Key word：

Optical Semiconductors

Release time：2026-04-27 10:39 reading：274 Continue reading>>

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NOVOSENSE Launches Next-Generation Isolated CAN Transceiver NSI1150, Supporting ±70V Bus Fault Protection and Higher Data Rates

　　NOVOSENSE today announced the launch of its new industrial-grade isolated CAN transceiver, the NSI1150 series. Built on NOVOSENSE's third-generation isolation technology, the device delivers ±70V bus fault protection and up to ±150kV/μs (typical) common-mode transient immunity (CMTI). Compared to the previous generation (NSI1050), the NSI1150 achieves a comprehensive improvement in reliability and noise immunity. It also integrates NOVOSENSE's proprietary CAN FD transceiver, supporting communication speeds of up to 5 Mbps.　　The NSI1150 is available in multiple package options, including SOW16, SOW8, SOP8, SOWW8, and DUB8, addressing diverse design requirements. It is well suited for high-voltage, high-noise, multi-node applications such as industrial automation and control, energy and power systems, as well as communications and servers.　　Reliability Upgrade for Harsh Environments　　The NSI1150 delivers industry-leading reliability and robustness, featuring a high CMTI of ±150kV/μs (typical) and ±70V bus fault protection, enabling it to effectively handle strong electromagnetic interference and ground potential differences in demanding environments.　　In addition, all pins support ±6kV HBM ESD protection and 10kV surge capability across the isolation barrier, ensuring stable communication even under extreme conditions. The device offers multiple isolation ratings—3 kVRMS, 5 kVRMS, and 7.5 kVRMS—to meet stringent safety requirements across various applications, reinforcing system protection in critical sectors such as industrial automation and energy infrastructure.　　Multiple Package Options for Flexible Design　　The NSI1150 is offered in five mainstream package options—SOW16, SOW8, SOP8, SOWW8, and DUB8—accommodating different space constraints and safety requirements. Among them, the newly introduced SOWW8 wide-body package provides up to 15 mm creepage distance, making it ideal for applications with strict creepage requirements, such as photovoltaic systems, EV charging stations, and industrial power supplies.　　This extended creepage distance simplifies safety certification processes and enables more flexible layout design for high power density systems. The diversified package portfolio further enhances design flexibility and accelerates time-to-market.　　"Isolation+" Portfolio Setting Industry Benchmark　　Leveraging its deep expertise and technological leadership in isolation, NOVOSENSE offers a comprehensive "Isolation+" portfolio, including digital isolators, isolated sensing, isolated interfaces, isolated power, and isolated drivers.　　NOVOSENSE is building a robust safety foundation for high-voltage systems with its full "Isolation+" ecosystem:　　"+" stands for enhanced safety: NOVOSENSE products deliver safety levels exceeding basic isolation standards, and build a more reliable system isolation safety boundary for customers' systems.　　"+" stands for full product ecosystem: With mature capacitive isolation technology IP as the cornerstone, expand into a complete product portfolio to provide one-stop isolation solutions.　　"+" stands for in-depth application empowerment: Meet the emerging needs of scenarios including electric vehicle high-voltage platforms, high-power photovoltaic-storage-charging systems, and high-integration, high-efficiency AI server power supplies, enabling system-level safety, reliability and efficiency.　　With its comprehensive "Isolation+" product strategy—anchored by core technology IP and a full ecosystem—NOVOSENSE continues to set the benchmark in isolation semiconductors, delivering one-stop isolation solutions to customers worldwide.　　Previous:

Key word：

NOVOSENSE

Release time：2026-04-24 10:58 reading：297 Continue reading>>

Trade news

ROHM has Introduced Reference Designs for Three-Phase Inverters Featuring New SiC Power Modules

　　ROHM has released reference designs "REF68005", "REF68006", and "REF68004" for three-phase inverter circuits featuring EcoSiC™ brand SiC molded modules "HSDIP20", "DOT-247", and "TRCDRIVE pack™" on ROHM’s website. Designers can use the data provided in these reference designs to create the drive circuit boards. When combined with ROHM's SiC modules, these designs help reduce the person-hours required for device evaluation.　　In high power conversion circuits, while SiC power devices contribute to higher efficiency and reliability, they can increase the workload associated with peripheral circuit and thermal design. The reference designs released by ROHM support output power levels up to the 300kW class, facilitating the adoption of SiC modules across a wide range of automotive and industrial applications.　　Three types of SiC modules compatible with these reference designs are already available for purchase through online distributors such as DigiKey and Farnell.　　About Reference Designs　　These reference designs are intended for users to utilize the publicly released design data. If you would like to obtain a reference design board or evaluation kit, please contact a sales representative or visit the contact page on ROHM’s website. (Quantities are limited.)　　Regarding Online Sales of SiC ModulesDetails of SiC modules currently available through online distributors can be found below.　　New SiC Molded Modules Now Available for Online Purchase!　　Simulation SupportWe also provide various support resources to facilitate quick evaluation and implementation of our products. ROHM’s comprehensive solutions, including simulation and thermal design support, can provide valuable assistance in component selection.　　Various design data related to the evaluation boards can be downloaded from their respective reference design page, while the product information for SiC modules compatible with the reference designs can be accessed from each product page as well.　　Additionally, the ROHM Solution Simulator, a simulation tool enabling system-level verification from the component selection stage, is available on ROHM’s website.　　HSDIP20: Reference Design / ROHM Solution Simulator / LTspice® Circuit ModelDOT-247: Reference Design / ROHM Solution Simulator / LTspice® Circuit ModelTRCDRIVE pack™: Reference Design　　Other Reference DesignsIn addition to those introduced in this release, we offer numerous reference designs that contribute to reduced design effort for users. More details are available through the link below.　　Reference Design / Application Evaluation Kit　　Related InformationNews Release (HSDIP20)　　ROHM Develops New High Power Density SiC Power ModulesNews Release (DOT-247)　　ROHM Launches 2-in-1 SiC Molded Module “DOT-247”News Release (TRCDRIVE pack™)　　ROHM’s New TRCDRIVE pack™ with 2-in-1 SiC Molded Module: Significantly Reduces the Size of xEV Inverters　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.・TRCDRIVE pack™ and EcoSiC™ are trademarks or registered trademarks of ROHM Co., Ltd.・LTspice® is a registered trademark of Analog Devices, Inc.When using third-party trademarks, please adhere to the usage guidelines specified by the rights holder.

Key word：

ROHM

Release time：2026-03-18 11:35 reading：515 Continue reading>>

Trade news

Renesas Develops SoC Technologies for Automotive Multi-Domain ECUs Essential for the SDV Era

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, has developed three System-on-Chip (SoC) technologies for automotive multi-domain electronic control units (ECUs). They feature advanced AI processing capabilities and chiplet functions, serving as the core technology platform for next-generation automotive electrical/electronic (E/E) architectures. Renesas presented the results at the International Solid-State Circuits Conference 2026 (ISSCC 2026), held February 15–19 in San Francisco, USA.　　In the age of software-defined vehicles (SDVs), automotive SoCs require advanced performance to run multiple applications simultaneously and must offer scalability through chiplets. They must also meet the functional safety requirements of automotive SoCs. As multi-domain SoCs powering central computing are growing larger and more complex, maintaining automotive-grade quality is becoming more difficult. With increased performance in advanced SoCs, power consumption also rises, making improvements in power efficiency and safety vital. To meet these needs, Renesas has developed the following new technologies.　　1. Chiplet architecture that supports functional safety　　To meet the functional safety requirements of automotive SoCs, Renesas has developed a new, proprietary architecture that supports ASIL D even in a chiplet configuration. By combining the standard die-to-die UCIe interface with a proprietary RegionID mechanism, the architecture prevents interference with hardware resources, even when numerous applications run simultaneously, thereby achieving Freedom from Interference (FFI).　　Conventional UCIe interfaces lack functionality to transmit RegionIDs between dies. Renesas developed a method for mapping RegionIDs into physical address space, encoding them into the UCIe region, and transmitting them. This enables safe access control through the memory management unit (MMU) and real-time cores, and meets functional safety requirements across chiplets. Additionally, by maintaining bandwidth from processors to the memory bus, the UCIe interface was confirmed through testing to achieve a high transmission speed of 51.2 GB/s, approaching the upper limit of intra-SoC transfer speeds. This technology provides both scalability and safety for high-performance automotive SoCs.　　2. Advanced AI processing capabilities and automotive-grade quality　　Automotive-grade quality is vital for SDV systems. Renesas has created a 3 nm SoC design that improves the performance of neural processing units (NPUs) for AI processing, while maintaining automotive-grade quality. In recent years, NPUs have been growing larger, with their area expanding 1.5-fold compared to previous generations. This has led to increased clock latency between shared clock sources and individual circuits. To address this problem, Renesas has redesigned the clock architecture by splitting up clock pulse generators (CPGs), which in past designs were module-level units, and placing mini-CPGs (mCPGs) at the sub-module level. This greatly reduces clock latency and meets timing requirements.　　However, multi-layer mCPGs complicate test clock synchronization, which is critical for achieving zero defects in automotive applications. Renesas has integrated test circuits into the hierarchical CPG architecture and unified the signal path for user clocks and test clocks. The new design also synchronizes upper- and lower-level mCPGs under a single clock source in test mode. This makes unified phase adjustment possible. As a result, Renesas has been able to achieve quality aligned with zero-defect expectations, even for large-scale SoCs, providing the high reliability required for next-generation SDV automotive SoCs.　　3. Advanced power control and monitoring for improved power efficiency and safety　　To achieve the high level of performance required for automotive SoCs with improved power efficiency and safety, Renesas has developed advanced power gating technology that uses over 90 power domains. It enables precise power control, from several milliwatts to several tens of watts, depending on operating conditions. Furthermore, Renesas has split power switches (PSWs) into ring PSWs and row PSWs to reduce IR drops (voltage drops) associated with increasing current density from smaller process geometries. When power is turned on, the ring PSW suppresses rush currents. Then the row PSW equalizes impedance within the domain. Together, these reduce IR drops by roughly 13% compared with conventional designs.　　To meet ASIL D functional safety standards, the dual core lock step (DCLS) configuration controls the master and checker cores with independent power switches and controllers. With this design, even if one side fails, the failure can be detected through lockstep operation. Furthermore, loopback monitoring is performed for each PSW's gate signal, so OFF states are detected when a failure occurs. A digital voltage meter (DVMON), which is highly resistant to temperature drift, is used for voltage monitoring. This improves aging tolerance by 1.4 mV. These technologies enable high-performance automotive SoCs that offer both power efficiency and safety.　　These new technologies are being used in Renesas' R-Car X5H SoC for automotive multi-domain ECUs. With R-Car X5H, users can accelerate the evolution of SDVs while ensuring safety and enabling autonomous driving, digital cockpit and more.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube, and Instagram.　　(Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.

Key word：

Renesas

Release time：2026-02-28 15:45 reading：751 Continue reading>>

Trade news

Fullhan launches FH8626V300: 2M/3M IP Camera SoC

　　FH8626V300 is a cost-effective and easy to develop 2M/3M IP camera solution. The chip integrates a high-performance ISP module and H.264/JPEG encoder, delivering excellent image processing capability, high encoding quality, and low bitrates.It also incorporates 64MB DDR2 memory and provides a complete set of peripheral interfaces required for IP camera applications, including USB, SDIO, and Ethernet, making it suitable for a wide range of network camera products.FH8626V300 features a high-performance 0.5T NPU, enabling intelligent functions such as smart detection.

Key word：

Fullhan

Release time：2026-02-10 16:49 reading：3381 Continue reading>>

Trade news

MQ771-GL: Fibocom’s Compact Cat.M Module Enters Sampling, Driving Asset Tracking Innovation

　　Fibocom (300638.SZ | 0638.HK), a global leader in wireless communicationmodules and AI solutions, announced that its Cat.Mmodule MQ771-GL has entered the engineering sample stage. Withits ultra-compact size, low power consumption,global frequency coverage, and stable network compatibility,the MQ771-GL offers a cost-effective IoT solution for asset tracking, enablinglong battery life, high reliability, and precise positioning for large-scaleLPWA deployments.　　Dual-Mode Support for FlexibleDeployment　　The MQ771-GL supports 3GPP Release 14Cat.M1 and NB-IoT standards and is compatible with mainstream frequencybands worldwide, making it ideal for LPWA network deployments across NorthAmerica, Europe, Asia, and beyond. This global compatibility ensuresreliable connectivity for asset tracking devices and enables flexible operationeven in complex or challenging environments.　　Compact Size with Ultra-Low Power Consumption　　Leveraging advanced power managementtechnologies, the MQ771-GL supports PSM (Power Saving Mode) and eDRX (extendedDiscontinuous Reception), dramatically extending device battery life. InPSM mode, standby current drops to the microampere (μA) level, cutting powerconsumption by 75% compared with the previous generation — ideal for smartwater meters. In eDRX mode, power usage is reduced by 90%, making itsuitable for gas meters, asset trackers, and other long-term outdoor devices,enabling multi-year operation.　　The module’s 17.7mm × 15.8mm LGA package is compatible with the pin layout of Fibocom’s Cat.1 modules, supportingflexible product iteration. Its compact form factor is well-suited forspace-constrained tracking devices, simplifying integration and deployment.　　Enhanced Performance with Rich InterfaceOptions　　The MQ771-GLsupports MQTT, CoAP, LwM2M and standard interfaces like UART, I2C,and I2S, making it adaptable for diverse asset tracking terminals. Itintegrates Soft GPS for precise real-time positioning and features a hardware-levelsecurity engine for encrypted, secure communications, protecting againstunauthorized access.　　Liu Sunzhi,General Manager of Fibocom’s MTC Business Unit, commented:　　"With the MQ771-GL now entering the engineering sample stage, itsultra-compact, ultra-low-power design is set to lower development barriers forasset tracking terminals and accelerate large-scale IoT connectivity. Movingforward, we will continue to strengthen collaborative innovation with verticalindustries, driving the rapid commercialization of low-power, wide-connectivitysolutions for asset tracking and other IoT applications."

Key word：

Fibocom

Release time：2026-02-06 17:41 reading：797 Continue reading>>

Trade news

Fibocom Launches Global LTE Cat.1 bis Module LE271-GL

　　January 14, 2026 – Fibocom (300638.SZ | 0638.HK), a global leader in wireless communication modules and edge AI solutions, today announced the launch of its global LTE Cat.1 bis module, LE271-GL, providing IoT devices with single-SKU global connectivity. With compact size, global frequency coverage, low power consumption, and high compatibility, the LE271-GL offers a cost-effective 4G solution for worldwide IoT applications such as asset tracking, IP cameras, new energy systems, and consumer electronics.　　Compact Design and Global Coverage　　Measuring 17.7mm × 15.8mm, the LE271-GL is pin-to-pin compatible with Fibocom’s MC661, LE270, and LE37X series, as well as other modules of similar packaging. Customers can migrate without changing PCB designs. Supporting both FDD-LTE and TDD-LTE bands, the module covers all major global frequencies under a single SKU, simplifying inventory management and reducing logistics costs for international deployment.　　High Performance and Fast Network Access　　The LE271-GL ensures quick and stable connections, achieving network registration in under 3.5 seconds. Optimized AT command response and USB enumeration improve device startup and connectivity efficiency. Its OpenCPU architecture provides flexibility for secondary development, lowering overall device costs.　　Ultra-Low Power and Extended Battery Life　　Optimized for battery-powered applications, the LE271-GL achieves microamp-level sleep current and supports DRX and other low-power modes. Interfaces including VDD_EXT and multiple GPIOs remain powered in standby, ensuring long battery life while maintaining critical functionality.　　Rich Functionality and Strong Compatibility　　LE271-GL supports LBS + Wi-Fi scan positioning (for indoor and international use), eSIM, and single/dual-SIM configurations. It integrates USB, UART, SPI, I2C, ADC, LCD, Camera, and GPIO interfaces, and supports TTS, MQTT, HTTP, and SSL protocols for versatile IoT applications.　　Now in the engineering sample stage, Fibocom’s LE271-GL sets a new benchmark for global Cat.1 bis connectivity, enabling customers and partners worldwide to explore new opportunities in the IoT market.

Key word：

Fibocom

Release time：2026-01-30 15:28 reading：796 Continue reading>>

Trade news

ROHM’s New LDO Regulators with 500mA Output Current Achieving Stable Operation Even with Ultra-small Capacitors to Expand Design Flexibility for High-current Applications

　　ROHM has developed the “BD9xxN5 Series” of LDO regulator ICs with 500mA output current, featuring its proprietary ultra-stable control technology “Nano Cap™”. This series comprises 18 products designed for 12V/24V primary power supply applications used in automotive equipment, industrial equipment, and communication infrastructure.　　In recent years, electronic devices have demanded higher density in smaller form factors at the same time. To meet this demand and achieve space savings and design flexibility, power supply ICs must be capable of stable operation even with small-capacity capacitors. However, achieving such performance with output capacitors of 1µF or less has been technically difficult.　　To address this challenge, ROHM developed the “BD9xxN1 Series” LDO regulator (150mA output current) in 2022, incorporating its proprietary ultra-stable control technology, “Nano Cap™”. This innovation enables stable operation with output capacitors as small as 100nF, earning widespread adoption across numerous applications.　　The newly developed BD9xxN5 Series builds on the success of the BD9xxN1 Series by increasing the output current to 500mA – more than three times higher than before – significantly broadening its suitability for applications requiring higher power. In addition, very low output voltage ripple of approximately 250mV (with load current variation of 1mA to 500mA within 1µs) is achieved with a small output capacitance of just 470nF (typical). Beyond standard small MLCCs (multi-layer ceramic capacitors) in the range of several µF and large-capacity electrolytic capacitors, it also supports ultra-small MLCCs, such as the 0603M size (0.6mm × 0.3mm), with capacities below 1µF – where stability was previously difficult to achieve. This contributes to space saving as well as greater flexibility in component selection.　　Furthermore, high-precision SPICE models, “ROHM Real Model” are provided for accurate simulation and can be downloaded from the ROHM official website.　　SPICE Models: BD900N5xxx-C BD933N5xxxx-C BD950N5xxxx-C　　ROHM will continue to contribute to the high performance, miniaturization, and high reliability of electronic devices by further expanding its Nano Cap™ technology-equipped LDO series.　　Application Examples　　Automotive Equipment　　● Powertrain system power supplies for fuel injection systems (FI) and tire pressure monitoring systems (TPMS)● Body system power supplies for body control modules (BCM)● Infotainment system power supplies for clusters ad head-up displays (HUD), etc.Industrial Equipment　　● Power supplies for controllers like Programmable Logic Controllers (PLC), Remote Terminal Units (RTU), and industrial gateways● High-precision LDOs for analog loads and sensors measuring temperature, pressure, flow rate, etc.● Power supplies for monitoring and control panels in disaster prevention systems, access control systems and building automation.● Standby power supplies for Human-Machine Interfaces (HMI) and panel equipment, etc.Consumer Electronics　　● Power supplies for control boards in refrigerators, dishwashers, air conditioners, etc.● Power supplies for home appliances like thermostats and doorbells● Power supplies for constant power applications in home security and network equipment, etc.　　What is Nano Cap™ Technology?　　Nano Cap™ refers to ultra-stable control technology achieved by combining advanced analog expertise covering circuit design, processes, and layout utilizing ROHM’s vertically integrated production system. Stable control eliminates the problem of unstable operation related to capacitors in analog circuits, contributing to a reduction in design resources for a wide range of applications in automotive, industrial equipment, consumer, and other fields.　　Terminology　　Primary　　In a power supply circuit, the side in charge of 1st stage conversion from a power source such as a battery is called the primary and the side responsible for 2nd stage conversion is referred to as the secondary.　　LDO Regulator (Low Drop Out Regulator / Low Saturation Regulator)　　A type of power supply IC that converts between two different DC voltage levels. Falls under the category of linear regulator (where the input/output voltages operate linearly) characterized by a small input-output voltage difference. Compared to DC-DC converter ICs (switching regulators), LDOs feature a simpler circuit configuration and lower noise.　　ROHM Real Model　　A high-accuracy simulation model that make it possible to also achieve a perfect match between the actual IC and simulation values utilizing ROHM’s proprietary model-based technology.

Key word：

ROHM

Release time：2026-01-27 13:47 reading：601 Continue reading>>

Trade news

GigaDevice Successfully Lists in Hong Kong, Marking a New Phase of Global Expansion

　　GigaDevice Semiconductor Inc. (stock codes: 3986.HK; 603986.SH) was officially listed on the Main Board of the Hong Kong Stock Exchange on January 13, 2026, marking a major milestone with its dual listing in Shanghai and Hong Kong. This achievement represents a significant step forward in strengthening the company's capital base and supporting its long-term global growth strategy.　　The Hong Kong listing comes at a pivotal stage of GigaDevice’s development, as the company continues to expand its business scale and accelerate its presence in global markets. Leveraging Hong Kong’s role as an international financial hub, GigaDevice will further enhance its global capital support capabilities, strengthen connections with international customers and partners, and elevate its global brand profile.　　Founded in 2005, GigaDevice is a global leading fabless supplier dedicated to integrated circuit design. The company has built a diversified product portfolio spanning Flash memory, specialty DRAM, MCUs, analog ICs, and sensor chips. Its products are widely applied across consumer electronics, automotive electronics, industrial control, energy storage, the Internet of Things (IoT), PCs and servers, and communications markets. GigaDevice is among the few Chinese semiconductor companies to achieve global competitiveness across multiple core storage and control chip segments.The successful listing in Hong Kong underscores GigaDevice’s commitment to making international development a strategic priority. Beyond being a major corporate milestone, this listing establishes a new platform to support the company’s global operations and growth. Looking ahead, GigaDevice will continue to expand its diversified semiconductor portfolio globally, focus on long-term growth opportunities in areas such as artificial intelligence, IoT, and intelligent vehicles, and strengthen its long-term competitiveness through technology innovation, ecosystem partnerships, and brand building.

Key word：

GigaDevice

Release time：2026-01-22 11:22 reading：3764 Continue reading>>

model	brand	Quote
MC33074DR2G	onsemi
TL431ACLPR	Texas Instruments
BD71847AMWV-E2	ROHM Semiconductor
RB751G-40T2R	ROHM Semiconductor
CDZVT2R20B	ROHM Semiconductor

model	brand	To snap up
IPZ40N04S5L4R8ATMA1	Infineon Technologies
TPS63050YFFR	Texas Instruments
STM32F429IGT6	STMicroelectronics
BU33JA2MNVX-CTL	ROHM Semiconductor
BP3621	ROHM Semiconductor
ESR03EZPJ151	ROHM Semiconductor

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