Valeo & ROHM <span style='color:red'>Semiconductor</span> co-develop the next generation of power electronics
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Valeo & ROHM Semiconductor co-develop the next generation of power electronics

　　Valeo, a leading automotive technology company, and ROHM Semiconductor, a major semiconductor and electronic component manufacturer, collaborate to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE pack™ to Valeo for future powertrain solutions.　　Valeo is broadening access to efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the biggest one (eTrucks). By combining Valeo’s expertise in mechatronics, thermal management and software development with ROHM’s power modules, Valeo drives the power electronics solution forward, contributing to the performance, efficiency, and decarbonization of automotive systems worldwide.　　Valeo and ROHM have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter – a key component in the propulsion systems of electric vehicles (EVs) and plug-in hybrids (PHEVs). By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging.　　“This partnership marks, for Valeo Power Division, a significant step forward in delivering advanced and high-efficient power electronics,” says Xavier DUPONT, Valeo Power Division CEO. “Together, we aim to set new industry standards for high voltage inverters and accelerate the transition towards more efficient and affordable electric mobility.”　　“We are pleased to support Valeo, a renowned automotive supplier, with our power semiconductors. ROHM’s TRCDRIVE pack™ provides high power density, leading to an improved power efficiency. Together, we contribute to the development of highly efficient powertrains by fostering the collaboration with Valeo,” says Wolfram HARNACK, President ROHM Semiconductor GmbH.　　These evolutions are all essential to supporting the growing demand for longer range, faster charging capabilities, and, overall a high-performance and an affordable inverter for BEVs and PHEVs.　　Valeo will start supplying a first series project in early 2026. Valeo and ROHM will contribute to the improvement of efficiency and downsizing of Valeo’s next generation of xEV inverters.　　Background on the TRCDRIVE pack™　　TRCDRIVE pack™ is a trademark for the SiC molded module developed for traction inverter drives. This product features high power density and a unique terminal configuration – solving the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours. Because SiC enables low-loss power conversion under high voltage conditions, combining Valeo's component technology, casing design and thermal management expertise with ROHM's power module creates a synergistic effect. Through both companies’ collaboration in automotive power electronics, they contribute to achieving a decarbonized society by enhancing the performance and efficiency of the motor inverter.　　More information is available via:　　https://www.rohm.com/news-detail?news-title=2024-06-11_news_trcdrive-pack&defaultGroupId=false　　TRCDRIVE pack™ are trademarks or registered trademarks of ROHM Co., Ltd.　　About Valeo　　Valeo is a technology company and partner to all automakers and new mobility players worldwide. Valeo innovates to make mobility safer, smarter and more sustainable. Valeo enjoys technological and industrial leadership in electrification, driving assistance systems, reinvention of the interior experience and lighting everywhere. These four areas, vital to the transformation of mobility, are the Group's growth drivers.　　Valeo in figures: 22 billion euros in sales in 2023 | 109 600 employees, 28 countries, 159 plants, 64 research and development centers and 19 distribution platforms at June 30, 2024.　　https://www.valeo.com/　　Valeo is listed on the Paris stock Exchange.
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Release time：2024-11-29 10:49 reading：201 Continue reading>>
Renesas and Indian Institute of Technology Hyderabad Sign Agreement to Accelerate India’s <span style='color:red'>Semiconductor</span> Independence
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Renesas and Indian Institute of Technology Hyderabad Sign Agreement to Accelerate India’s Semiconductor Independence

　　TOKYO, Japan and HYDERABAD, India, June 05, 2024 ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, and the Indian Institute of Technology Hyderabad (IITH) have signed a three-year memorandum of understanding (MOU) for research and collaboration in the field of VLSI and embedded semiconductor systems. The engagement with IITH professors and staff will focus on R&D and academic interactions with a goal to drive innovation in India’s semiconductor industry and advance the nation’s “Make in India” strategy.　　The signing ceremony of the agreement was held on June 3, 2024 at the IITH in Telangana state between Malini Narayanamoorthi, Country Head of India and Senior Director of Engineering, Analog & Connectivity Product Group, Renesas, and Prof. B.S. Murty, Director, IITH.　　The MOU will help the IITH foster talent development in support of India’s ambition to build a self-reliant semiconductor industry while enabling Renesas to add talented employees in India through closer collaboration with the country’s educational institutions to capture huge market opportunities.　　Under the MOU, Renesas this year will begin supporting university course curriculum development, hands-on learning using Renesas development boards and various outreach programs designed to advance lab work and proof-of-concept projects. IITH engineering students will be eligible to apply for six-month Renesas internships and pursue full-time employment with the company.　　“India holds significant importance within our business operations, and we appreciate its dynamic innovation environment and strong potential for growth,” said Julie Pope, Senior Vice President and Chief Human Resources Officer, Renesas. “We are delighted to partner with IITH in its goal to be the cradle for semiconductor innovation in India. We aim to strengthen India's semiconductor product ecosystem, and support the “Make in India” objective of providing increasing semiconductor content for India and the world.”　　“Recognizing the importance of India at the forefront of the semiconductor industry in influencing the future, our collaboration with Renesas will provide a chance for our students to gain exposure and learn directly from Renesas experts about constructing products with cutting-edge technologies. IITH is pioneering several initiatives to foster talent development in Electronic System Design and Manufacturing (ESDM) sector across India. This synergistic collaboration is a booster to that effort. This is also a pathway for R&D collaboration as IITH boasts several expert faculty spanning across several departments who can co develop next generation electronic products with Renesas,” said Prof. B.S. Murty, Director, IITH. “The opportunity for employment at a leading global company is a tremendous additional benefit.”　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live.　　About IIT Hyderabad　　Indian Institute of Technology Hyderabad (IITH) is one of the eight IITs established by the Government of India in 2008. In a short span of 15 years, the institute has become one of the top-ranked institutions in the country and has received global recognition. It has 300+ full-time faculty, 4,700+ students (60% of them being PG+PhD students), 18 Departments + 1 Centre for Interdisciplinary Programs, nearly 500+ state-of-the-art Research Facilities, and five research and entrepreneurship centres. The institute has a strong research focus with approx. Rs. 1,100+ Cr of sanctioned research funding (Rs. 250+ Cr in 2023-24). IITH has more than 10,500+ research publications with 1,60,000+ Citations, 275+ Published Patents, 3,700+ sponsored/consultancy projects with 500+ running projects, and about 190+ startups that have generated 1,100+ jobs and a revenue of Rs. 1,500+ Cr.
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Release time：2024-06-12 13:37 reading：988 Continue reading>>
CG Power and Industrial Solutions Limited, Renesas and Stars Microelectronics, to Jointly Build Outsourced <span style='color:red'>Semiconductor</span> Assembly and Test Facility in India
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CG Power and Industrial Solutions Limited, Renesas and Stars Microelectronics, to Jointly Build Outsourced Semiconductor Assembly and Test Facility in India

　　CG Power and Industrial Solutions Limited (“CG”), a part of Tube Investments of India Limited and the Murugappa Group; Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions; and Stars Microelectronics (Thailand) Public Co. Ltd (“Stars Microelectronics”), a Thailand-based Outsourced Semiconductor Assembly and Test (OSAT) provider; had recently signed a Joint Venture Agreement (JVA) to establish a Joint Venture (JV) to build and operate an OSAT facility in India. The Union Cabinet, chaired by Prime Minister Shri Narendra Modi, approved the project of the JV under India’s Semiconductor scheme on February 29, 2024.　　The JV brings together unique capabilities of the partners with a vision to “Make in India for the World.” CG, with around 86 years of manufacturing expertise, is keen to build semiconductor capabilities and ecosystem in India. Renesas, a leading semiconductor company headquartered in Japan, will provide advanced semiconductor technology and expertise. Stars Microelectronics, a Thai based OSAT, will provide both technology for legacy packages and training and enablement.　　The JV will be 92.3% owned by CG, with Renesas and Stars Microelectronics each holding equity capital of approximately 6.8% and 0.9%, respectively. The JV plans to invest INR 7,600 crores over a five-year period, which will be financed through a mix of subsidies, equity, and potential bank borrowings as required.　　The JV will set up a state-of-the-art manufacturing facility in Sanand, Gujarat, with a capacity that will ramp up to 15 million units per day. The JV will manufacture a wide range of products – ranging from legacy packages such as QFN and QFP to advanced packages such as FC BGA, and FC CSP. The JV will cater to industries such as automotive, consumer, industrial, 5G, to name a few.　　Commenting on this new venture, Mr. S. Vellayan, Chairman, CG Power and Industrial Solutions Limited, said, “CG’s entry into the semiconductor manufacturing marks a strategic diversification for us. Our partners, Renesas and Stars Microelectronics, will make our learning curves steeper and help us focus on innovation and excellence.　　This is a very exciting phase for the entire nation, and we are very keen to build out India’s semiconductor capability and ecosystem.”　　Mr. Natarajan Srinivasan, Managing Director, CG Power and Industrial Solutions Limited, added, “It is a matter of great pride for CG to implement this project of National importance.”　　Commenting on the partnership, Mr. Hidetoshi Shibata, CEO of Renesas said, “India is a critical part of Renesas’ business. We value its innovative landscape and robust potential growth and are committed to accelerating our investment in India. By partnering with the Murugappa Group and Stars Microelectronics, we will bolster India’s semiconductor ecosystem and address the growing semiconductor demand for the customers worldwide.”　　Mr. Prompong Chaikul, Chairman of Executive Committee of Stars Microelectronics (Thailand) Public Co., Ltd added, "We are deeply honored to join forces in this thrilling venture. Leveraging our expertise and experience in OSAT, we are committed to providing robust support to ensure the success of this project in India."　　About CG Power and Industrial Solutions Limited　　CG Power and Industrial Solutions Limited is an engineering conglomerate headquartered in Mumbai, India. The Company is a leader in the Electrical Engineering Industry and has two business lines—Industrial Systems and Power Systems. It manufactures Traction Motors, Propulsion systems, Signaling Relays etc., for the Indian Railways, and wide range of Induction Motors, Drives, Transformers, Switchgears, and other allied products for the Industrial and Power sectors. Recently, the Company also made a foray into the business of Consumer Appliances such as Fans, Pumps and Water Heaters.　　The Company has world-class manufacturing plants across 9 locations in India and one in Sweden, and a Pan India network of 4 Regional and 15 Branch offices, with around 3000 employees. The Company’s consolidated revenue for FY23 was Rs 6,973 crores (USD 838 million).　　The Company continues to excel and maintain its leadership position across its businesses, backed by its outstanding expertise, customer-centric approach, and enhanced focus on innovation and sustainability.　　Since November 2020, the Company has become a part of the renowned Murugappa Group.　　About Murugappa Group　　A 123-year-old conglomerate with presence across India and the world, the INR 742 billion Murugappa Group has diverse businesses in agriculture, engineering, financial services and more.　　The Group has 9 listed companies under its umbrella — Carborundum Universal Limited, CG Power & Industrial Solutions Limited, Cholamandalam Financial Holdings Limited, Cholamandalam Investment & Finance Company Limited, Cholamandalam MS General Insurance Company Limited, Coromandel International Limited, EID Parry (India) Limited, Shanthi Gears Limited, Tube Investments of India Limited and Wendt India Limited. Brands such as Ajax, Hercules, BSA, Montra, Montra Electric, Mach City, Gromor, Paramfos, Parry’s are part of the Group’s illustrious stable.　　Abrasives, technical ceramics, electro minerals, electric vehicles, auto components, fans, transformers, signaling equipment for railways, bicycles, fertilizers, sugar, tea and several other products make up the Group’s business interests.　　Guided by the five lights — integrity, passion, quality, respect and responsibility — and a culture of professionalism, the Group has a workforce of over 73,000 employees.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation  empowers a safer, smarter and more sustainable future where technology helps make our lives easier. The leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live.
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Release time：2024-03-05 13:10 reading：2387 Continue reading>>
Earthquake Temporarily Halts Silicon Wafer, MLCC, and <span style='color:red'>Semiconductor</span> Facilitie sin Japan, Impact Expected to be Controllable, Says TrendForce
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Earthquake Temporarily Halts Silicon Wafer, MLCC, and Semiconductor Facilitie sin Japan, Impact Expected to be Controllable, Says TrendForce

　　TrendForce’s investigation into the impact of the recent strong earthquake in the Noto region of Ishikawa Prefecture, Japan, reveals that several key semiconductor-related facilities are located within the affected area. This includes MLCC manufacturer TAIYO YUDEN, silicon wafer (raw wafer) producers Shin-Etsu and GlobalWafers, and fabs such as Toshiba and TPSCo (a joint venture between Tower and Nuvoton).　　Given the current downturn in the semiconductor industry and the off-peak season, along with existing component inventories and the fact that most factories are located in areas with seismic intensities of level 4 to 5—within the structural tolerance of these plants—preliminary inspections indicate no significant damage to the machinery, suggesting the impact is manageable.　　In terms of silicon wafer production, Shin-Etsu and GlobalWafers' facilities in Niigata are currently shut down for inspection. The crystal growth process in raw wafer manufacturing is particularly sensitive to seismic activity. However, most of Shin-Etsu's crystal growth operations are primarily in the Fukushima area, thus experiencing limited impact from this earthquake. SUMCO reported no effects.　　On the semiconductor front, Toshiba's Kaga facility in the southwestern part of Ishikawa Prefecture is currently undergoing inspections. This site includes a six-inch and an eight-inch factory, along with a twelve-inch facility slated for completion in the 1H24. Additionally, the three TPSCo factories in Uozu, Tonami, and Arai—co-owned by Tower and Nuvoton (formerly Panasonic)—are all undergoing shutdowns for inspections. In contrast, USJC (UMC's acquisition of the Mie Fujitsu plant area in 2019) was not affected.　　MLCC manufacturer TAIYO YUDEN’s new Niigata plant, designed to withstand seismic activity up to level 7, reported no equipment damage. Murata (MLCC fabs only) and TDK’s MLCC plants experienced seismic intensities below level 4 and were not notably affected. However, Murata’s other factories (Non-Production MLCC) in Komatsu, Kanazawa, and Toyoma, which are in the areas with seismic intensity above 5, were closed for the New Year holiday, and staff are currently assessing any damage.
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Release time：2024-01-03 16:49 reading：1585 Continue reading>>
Murata：What Are the Conditions for Increasing the Efficiency of Power Conversion and Motor Drives and for Expanding the Use of SiC and GaN Power <span style='color:red'>Semiconductor</span>s?
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Murata：What Are the Conditions for Increasing the Efficiency of Power Conversion and Motor Drives and for Expanding the Use of SiC and GaN Power Semiconductors?

　　Governments around the world and companies in all industries and businesses are coming together to engage in efforts to achieve carbon neutrality (Fig. 1). Every conceivable multifaceted decarbonization measure is being taken. This includes, for instance, the utilization of renewable energies such as solar power, the electrification of equipment that was previously used by burning fossil fuels, and the reduction in power consumption of existing devices like home appliances, IT equipment, and industrial motors.　　Various countries and regions have introduced carbon pricing mechanisms as systems to shift greenhouse gas emissions from business activities to costs. As a result, in addition to being meaningful as social contribution, carbonization initiatives now have a clear numerical impact on the financial statements that serve as a report card for corporate management.　　Full Model Change in Semiconductor Materials for the First Time in 50 Years　　There has been an increase in activity for decarbonization efforts. Against this background, there is a field in semiconductors where the pace of the movement in technological innovation is rapidly accelerating. This is the power semiconductor field.　　Power semiconductors are semiconductor devices that play the role of managing, controlling, and converting the power necessary to operate electrical and electronic equipment. These devices are built into so-called power electronics circuits. These circuits include power circuits that stably supply drive power to home appliances and IT equipment, power conversion circuits to transmit and distribute power without waste, and circuits that drive motors with high efficiency at a torque and rotational speed that can be controlled freely. These power semiconductors, which are key devices to realize a sustainable society, have now started to undergo a once-in-50-years full model change.　　Power semiconductors have various device structures including MOSFET*1, IGBT*2, and diodes. They are used differently according to the purpose. Nevertheless, although the structure differs, silicon (Si) has consistently been used for more than 50 years as the device material. That is because Si has good electrical characteristics and has the property of being easy to process into various device structures at the same time.　　*1: A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a type of Field Effect Transistor. It functions as an electrical switch. These transistors consist of three layers: a metal, oxide, and semiconductor. The current is turned on and off by applying a voltage to the electrode called a gate.　　*2: An Insulated Gate Bipolar Transistor (IGBT) is a transistor with a structure that combines a MOSFET and bipolar transistor. It is characterized by combining the high-speed operation of the MOSFET with the high withstand voltage and low resistance of the bipolar transistor.　　However, Si-based power semiconductors are no longer able to clear the high level of technical requirements to further reduce the power consumption of various electrical and electronic equipment. To overcome this situation, progress is underway on the utilization of new materials such as silicon carbide (SiC) and gallium nitride (GaN), which are more suitable than Si as materials for power semiconductors. SiC and GaN have multiple physical properties and characteristics suitable for power semiconductors. These include their dielectric breakdown field strength (affects the withstand voltage), mobility (affects the operating speed), and thermal conductivity (affects reliability). If we can develop a device that brings out those excellent characteristics, we can realize power semiconductors with even higher performance.　　SiC-based MOSFETs and diodes have already been commercialized. They are being used in electric vehicle (EV) motor drive inverters, DC/AC converters in solar power generation power conditioners, and other equipment. GaN-based HEMT*3 have also already been commercialized. They are now being used in AC converters for ultra-small PCs, chargers for smartphones, and other equipment.　　*3: A High Electron Mobility Transistor (HEMT) is a Field Effect Transistor that enables high-speed switching by joining semiconductors with differing properties to induce electrons with high mobility.　　Evolution of Capacitors, Inductors, and Other Equipment Is Essential to Draw out the Potential of SiC and GaN　　It is not possible to draw out the full outstanding potential of power semiconductors made based on new materials simply by replacing the Si-based devices in existing power electronics circuits. This is because the other semiconductor ICs, passive components, and even the control software that comprise power electronics circuits have been developed and selected on the assumption they would be used in Si-based power semiconductors. It is necessary to newly re-develop and re-select these peripheral components as well to effectively utilize new material-based power semiconductors.　　Fig. 2: Example of an AC/DC converter circuit utilizing a GaN-based power semiconductor used in data center servers and other technologies　　For example, numerous GaN HEMTs are being used in AC/DC converter circuits that have adopted GaN HEMTs recently introduced to lower power consumption in the power supplies of data center servers (Fig. 2). It is possible to improve the switching frequency (operating frequency) of power electronics circuits by utilizing the features of GaN HEMTs in that they enable high-speed switching at high voltages. The reactance value of capacitors embedded into circuits and inductors in reactor signal processing circuits can be lower in circuits with a high operating frequency. In general, low reactance components have a small size. Therefore, it is possible to downsize the circuit board and to improve the power density. Similarly, introducing SiC MOSFETs even in inverter circuits which drive EV motors and other components enables the downsizing of peripheral components and also allows the overall inverter circuits to be made smaller and more lightweight.　　On the other hand, a high level of noise may arise from high-voltage and high-speed switching power supplies. There is a possibility that noise may then adversely affect the operation of the peripheral equipment. Power supplies comprising power semiconductors made with SiC and GaN switch at an even higher frequency. Therefore, the risk of noise occurring further increases. Accordingly, stricter noise suppression is required than when using existing power electronics circuits. At that time, there is a need to use noise suppression components designed to be applied to high-voltage, large-current, and high-frequency circuits rather than those for conventional circuits.　　In addition, there is also a need for small transformers that operate at even higher frequencies for transformers that are particularly heavy components even among passive components. Low profile planar transformers and other components have already been developed and launched onto the market under the assumption that they will be used in SiC- and GaN-based power semiconductors.　　Attention Focusing on the Evolution of Peripheral Components in Addition to Power Semiconductors　　Various types of semiconductors, not limited to power semiconductors, have been made based on Si up to now. Therefore, many existing electronic components have been developed under the implicit assumption that they will be used by being combined with Si-based semiconductors. It may become necessary to develop new products to suit the new technical requirements instead of simply searching for even better products among existing components to maximize the effect of introducing power semiconductors made with new materials.　　In general, Si-based power semiconductors tend to operate at lower speeds the greater the voltage and current they can handle (Fig. 3). That is the reason why there are not enough small capacitors and reactors that can handle high voltages and large currents. Moreover, there is a trend to simplify the heat dissipation system and to reduce the size, weight, and cost for SiC-based power semiconductors that can operate stably under high temperatures. In these cases, the passive components also need to have a guaranteed high reliability under a high-temperature environment.　　The introduction of new materials in the power semiconductor field is a major move to update the electrical and electronic ecosystem that has been optimized to Si materials for more than 50 years. Therefore, we also want to pay a great deal of attention to the evolution of peripheral electronic components optimized for new materials.
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Release time：2023-11-22 14:42 reading：1635 Continue reading>>
TSMC’s Capacity and Orders Surge, Is the <span style='color:red'>Semiconductor</span> Industry Bouncing Back?
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TSMC’s Capacity and Orders Surge, Is the Semiconductor Industry Bouncing Back?

　　As reported by China Taiwanese media, there’s a gradual uptick in TSMC’s capacity utilization lately, accompanied by a noticeable surge in orders from TSMC’s clients. Some segments of the market are showing signs of rekindled demand, hinting at a possible upswing in the semiconductor industry. Nevertheless, certain semiconductor manufacturing firms remain cautious in their industry outlook.　　TSMC’s Capacity Utilization Rate on the Rise　　Media’s report indicates that TSMC’s capacity utilization rate has gradually recovered. The 7/6nm utilization, which had dropped to 40% at one point, is now around 60% and could potentially reach 70% by the end of the year. Similarly, the 5/4nm utilization is at 75-80%, and the 3nm capacity, which increases seasonally, is approximately 80%.　　Concurrently, TSMC is experiencing a significant uptick in orders from their clients, including tech giants like Apple, MediaTek, NVIDIA, AMD, Intel, Broadcom, Marvell, and STMicroelectronics. Furthermore, AI chip clients such as AMD’s subsidiary Xilinx, Amazon, Cisco, Google, Microsoft, and Tesla have all accepted TSMC’s plan for a price increase in 2024.　　Taking Tesla as an example, they are building a supercomputer facility in Austin to accelerate the development of their autonomous driving system, expanding the computing power of Dojo. The core D1 of Dojo is produced using TSMC’s 7nm process and advanced packaging technology. Based on this, Tesla is deepening its collaboration with TSMC, and it’s expected that their order volume will increase from around 5,000 pieces this year to 10,000 pieces next year.　　Amid the ongoing AI surge, NVIDIA is actively seeking additional production capacity. On October 19th, NVIDIA’s CEO, Jensen Huang, revealed in an interview that the global demand for AI chips remains robust. He has met with TSMC’s CEO, C.C. Wei, to discuss providing more capacity to serve customers. NVIDIA is in the planning stages for the next generation of chips designed for AI-based infrastructure and has also engaged in discussions with partners such as Quanta and ASUS to strategize collaboration.　　Is the Semiconductor Industry on the Rebound?　　During TSMC’s Q3 earnings call, C.C. Wei pointed out that, in addition to strong AI demand, there’s a rebound in demand for smartphones and personal computers. As for automotive electronics, benefiting from the continued growth of electric vehicles, the demand for next year is expected to be quite robust. Regarding when the semiconductor industry might hit bottom, Wei remarked that there are some early signs appearing in the PC and mobile phone sectors. However, it remains challenging to predict a strong resurgence as customers are still cautiously managing their inventories.　　In response to industry concerns about smartphone growth, TSMC’s CFO, Wendell Huang, noted that smartphone growth is anticipated to remain lower than the company’s future growth rate. High-Performance Computing (HPC) is expected to be the most robust growth segment, making substantial contributions to growth in the coming years.　　On the other hand, other semiconductor foundry companies, such as PSMC, have also shared their perspectives on the fourth quarter and future industry developments. Recently, PSMC’s President, Brian Shieh, pointed out that the supply chain’s inventory seems to have reached a reasonable level, with growing demand for mobile panel driver ICs, surveillance system CIS chips, and visibility extending beyond one quarter. Prices for special memory products have started to show an upward trend. Demand for Power Management ICs (PMIC) also displays signs of recovery, even though the trend isn’t as pronounced as that of driver ICs and CIS chips.　　Regarding UMC, the company is scheduled to hold an earning call on 25th October. In their previous earnings call for the last quarter, UMC mentioned that due to ongoing adjustments in the supply chain’s inventory, the outlook for wafer demand remains uncertain. Although the industry glimpsed a modest recovery in the second quarter, the overall sentiment in the end-market remains subdued, and customers continue to maintain stringent inventory management practices.
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Release time：2023-10-25 11:18 reading：1416 Continue reading>>
Infineon Inks Multi-Year Power <span style='color:red'>Semiconductor</span> Supply Agreements with Hyundai and Kia
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Infineon Inks Multi-Year Power Semiconductor Supply Agreements with Hyundai and Kia

　　Infineon, Hyundai, and Kia announced on October 18 that they have signed a multi-year agreement for the supply of SiC (Silicon Carbide) and Si (Silicon) power semiconductor modules and chips.　　Under this agreement, Infineon will supply SiC and Si power components to Hyundai and Kia until 2030, and in return, Hyundai and Kia will support Infineon’s production capacity and reserves.　　The demand for SiC power devices has surged with the growing popularity of new energy vehicles, and as a prominent industry leader, Infineon has embarked on numerous collaborations this year.　　Infineon and Resonac　　In January, Infineon declared a new multi-year supply and cooperation agreement with Resonac Co., Ltd. (formerly Showa Denko K.K.). According to this agreement, Resonac will provide Infineon with SiC materials for producing SiC semiconductor components, including 6-inch and 8-inch wafers. Initially focused on 6-inch wafers, Resonac will later supply 8-inch SiC wafers to support Infineon’s transition to 8-inch wafers. As part of the agreement, Infineon will also provide Resonac with SiC material technology-related intellectual property.　　Infineon and TanKeBlue, SICC　　In May, Infineon signed long-term agreements with TanKeBlue and SICC to ensure a more competitive and substantial supply of silicon carbide materials. These two suppliers will primarily provide Infineon with 6-inch silicon carbide substrates and offer 8-inch silicon carbide materials, aiding Infineon in transitioning to 8-inch SiC wafers. The agreements also encompass silicon carbide ingots, as Infineon had previously invested nearly 1 billion RMB in acquiring a laser-based wafer technology enterprise, aiming to enhance the utilization of silicon carbide substrates and device cost competitiveness.　　Notably, both TanKeBlue and SICC will account for a double-digit percentage of Infineon’s long-term demand volume.　　Infineon and Foxconn　　In the same month, according to the Foxconn’s official website, Infineon and Foxconn have signed a memorandum of cooperation to establish a long-term partnership in the field of electric vehicles. Under this agreement, the two companies will focus on the adoption of silicon carbide technology in high-power applications for electric vehicles, such as traction inverters, on-board chargers, and DC converters. They also plan to jointly establish a system application center in Taiwan to expand their collaboration further.　　Infineon and Schweizer Electronic　　Additionally, Infineon is collaborating with Schweizer Electronic to develop an innovative solution aimed at directly embedding Infineon’s 1200V CoolSiC™ chips into PCB boards. This move seeks to significantly enhance the driving range of electric vehicles while reducing the overall system cost.　　Infineon and Infypower　　In September, Infineon announced a partnership with Shenzhen Infypower (INFY) to provide the industry-leading 1200V CoolSiC™ MOSFET power semiconductor devices, boosting the efficiency of electric vehicle charging stations.　　In line with their goal of capturing a 30% share of the global SiC market by 2030, Infineon revealed plans to invest up to 5 billion euros over the next five years to construct the world’s largest 8-inch SiC power semiconductor facility in Malaysia.
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Release time：2023-10-20 13:27 reading：1614 Continue reading>>
NXP <span style='color:red'>Semiconductor</span>s LPCXpresso55S36 Development Board
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NXP Semiconductors LPCXpresso55S36 Development Board

　　NXP Semiconductors LPCXpresso55S36 Development Board provides a powerful, extendable platform for evaluating the LPC5536 Microcontroller (MCU). This development board features a high-speed USB debug probe based on easy firmware update options. The board is compatible with the Arduino UNO R3 and Mikroe click boards. This LPCXpresso55S36 board is lead-free and RoHS-compliant. The board is used with a wide range of development tools, including NXP MCUXpresso IDE, Keil µVision, and IAR embedded workbench.　　FEATURES　　High-speed USB, MCU-link debug probe with CMSIS-DAP and SEGGER J-Link protocol options　　Hardware support for external debug probe or external debug target　　MikroEletronika click expansion option　　LPCXpresso-V3 expansion connectors, compatible with Arduino UNO R3　　PMod-compatible expansion/host connector　　BLOCK DIAGRAM　　LPCXPRESSO55S36 CONNECTORS, PUSH BUTTONS, AND LEDS
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Release time：2023-09-26 15:10 reading：2566 Continue reading>>
What are the uses of gallium and germanium as semiconductor materials
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What are the uses of gallium and germanium as semiconductor materials

　　On July 3, according to the latest news from the Ministry of Commerce, for the purpose of safeguarding national security and interests, with the approval of the State Council, China decided to implement export controls on two key metals, gallium and germanium, starting from August 1.　　As we all know, gallium and germanium are very important materials in semiconductor applications. But actually, what are the uses of gallium and germanium as semiconductor materials? In this article, we will focus on gallium and germanium.　　What is Gallium?　　Gallium is one of the members of the strategic mineral family. It is a gray-blue or silver-white metal with atomic number 31, element symbol Ga, and atomic weight of 69.723. Gallium has a low melting point but a high boiling point. Pure liquid gallium has a significant supercooling tendency, and is easily oxidized in air to form an oxide film.　　The atomic structure of gallium includes 31 protons and electrons, and a corresponding number of neutrons. In chemical reactions, gallium atoms usually exist in a trivalent state, that is, they lose three electrons to form Ga3+ ions.　　Industrial uses of galliumManufacturing semiconductor gallium nitride, gallium arsenide, gallium phosphide, germanium semiconductor doping element;　　Pure gallium and low melting alloy can be used as heat exchange medium for nuclear reaction;　　Filling material for high temperature thermometer;　　Catalyst for diesterization in organic reaction.　　Gallium’s industrial applications are primitive, although its unique properties may have many applications. Liquid gallium’s wide temperature range and its low vapor pressure make it useful in pyrometers and pyrometers. Gallium compounds, especially gallium arsenide, have attracted more and more attention in the electronics industry. Precise world gallium production data are not available, but production in neighboring regions is only 20 tons/year.　　Applications of gallium　　1.Semiconductor industry　　Gallium plays an important role in the semiconductor industry. It is used in the manufacture of high-speed electronic devices, optoelectronic devices and solar cells. Gallium-based semiconductor materials, such as gallium arsenide (GaAs) and gallium nitride (GaN), have excellent electrical properties and high-temperature characteristics, which are suitable for the manufacture of high-frequency electronic devices and high-power electronic devices.　　2. LED lighting　　Gallium compounds are widely used in the manufacture of LEDs (Light Emitting Diodes). Gallium-based LEDs have the advantages of high efficiency, long life, and energy saving, and are widely used in indoor and outdoor lighting, electronic displays, and automotive lighting.　　3.Alloy preparation　　Gallium can form alloys with other metals to improve its characteristics and performance. For example, gallium alloys are used to make low-melting alloys such as gallium-indium alloy (often used in thermometers) and gallium-bismuth alloy (often used in fire alarm devices).　　What is Germanium?　　Germanium, tin and lead belong to the same group in the periodic table of elements.　　Germanium is a chemical element with symbol Ge, atomic number 32, and atomic weight 72.64. It is located in the fourth period and group IVA of the periodic table of chemical elements.　　Germanium element is a gray-white metalloid, shiny, hard, belonging to the carbon group, chemical properties similar to tin and silicon of the same group, insoluble in water, hydrochloric acid, dilute caustic solution, soluble in aqua regia, concentrated nitric acid or sulfuric acid, so it is soluble in molten alkali, alkali peroxide, alkali metal nitrate or carbonate, and is relatively stable in the air.　　The atomic structure of germanium includes 32 protons and electrons, and a corresponding number of neutrons. In chemical reactions, germanium atoms usually exist in a tetravalent state, that is, they share or lose four electrons to form Ge4+ ions.　　Industrial Uses of GermaniumGermanium has special properties in many aspects, and has extensive and important applications in semiconductors, aerospace measurement and control, nuclear physics detection, optical fiber communication, infrared optics, solar cells, chemical catalysts, biomedicine and other fields. It is an important strategic resource as well. In the electronics industry, in alloy pretreatment, in the optical industry, it can also be used as a catalyst.　　High-purity germanium is a semiconductor material. It can be obtained by reducing high-purity germanium oxide and then extracting it by smelting. Single crystal germanium doped with a small amount of specific impurities can be used to make various transistors, rectifiers and other devices. Germanium compounds are used in the manufacture of fluorescent panels and various high refractive index glasses.　　Germanium single crystal can be used as transistor, which is the first generation of transistor material. Germanium is used in radiation detectors and thermoelectric materials. High-purity germanium single crystal has a high refractive index. It is transparent to infrared rays, and does not pass through visible light and ultraviolet rays. Besides, it can be used as a germanium window, prism or lens for infrared light.　　At the beginning of the 20th century, germanium was used to treat anemia, and then became the earliest semiconductor element used. The refractive index of elemental germanium is very high, and it is only transparent to infrared light, but opaque to visible light and ultraviolet light.　　Therefore, military observers such as infrared night vision devices use pure germanium to make lenses. Compounds of germanium and niobium are superconducting materials. Germanium dioxide is a catalyst for the polymerization reaction. The glass containing germanium dioxide has high refractive index and dispersion performance, and can be used as a wide-angle camera and microscope lens. Germanium trichloride is also a new type of optical fiber material additive.　　According to the data, since 2013, the development of the optical fiber communication industry, the continuous expansion of the application of infrared optics in the military and civilian fields, the use of solar cells in space, and the promotion of ground-based high-efficiency solar power plants have made the global demand for germanium continues to grow steadily.　　In the early 21st century, the recovery of the global optical fiber network market, especially the optical fiber market in North America and Japan, drove the rapid growth of the optical fiber market. The annual growth rate of global optical fiber demand has exceeded 20%.　　Applications of germanium1.Semiconductor industry　　Germanium is an important material in the semiconductor industry. It is used in the manufacture of high-speed electronic devices and optoelectronic devices, such as high-purity germanium wafers for the manufacture of solar cells and infrared detectors.　　Also read: The ultimate guide to high-speed PCB and housing materials　　2. Optical fiber communication　　Germanium optical fiber is an important material for optical fiber communication. It has a high refractive index and transparency, and can be used to manufacture optical fibers and optical fiber amplifiers in high-speed communications.　　3. Optical applications　　Due to the permeability of germanium to infrared radiation, it is widely used in infrared optical systems and infrared imaging technology. Germanium lenses and germanium windows are used in areas such as infrared sensors, thermal imagers and infrared laser systems.　　Also read: Optical module – A comprehensive exploration　　4. Chemical catalysts　　Germanium compounds are often used as catalysts and have important applications in the chemical industry. Germanium catalysts can promote chemical reactions and are used to produce polymers, prepare organic compounds, and more.　　ConclusionGallium and germanium, as rare metal elements, play an important role in high-tech fields, electronics industry, energy industry, etc. As technology continues to advance, so too does the demand for these two elements.
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Release time：2023-09-26 14:49 reading：1642 Continue reading>>
ROHM <span style='color:red'>Semiconductor</span> R6049YN N-Channel Power MOSFETs
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ROHM Semiconductor R6049YN N-Channel Power MOSFETs

　　ROHM Semiconductor R6049YN N-Channel Power MOSFETs offer high-speed switching and low-on resistances for switching applications. Operating in a -55°C to +150°C temperature range, these single-channel enhancement mode devices feature a 600V drain-source breakdown voltage, a ±22A or ±49A continuous drain current, and a 65nC total gate charge. The ROHM R6049YN N-Channel Power MOSFETs are available in TO-220AB-3, TO-220FM-3, and TO-247G-3 package options.     FEATURES　　》Low on-resistance　　》Fast switching　　》Drive circuits can be simple　　》Si technology　　》Enhancement channel mode　　》Through-hole mount　　》Halogen-free mold compound　　》Lead-free plating and RoHS-compliant　　SPECIFICATIONS　　》600V drain-source breakdown voltage　　》±22A or ±49A continuous drain current　　》±147A pulsed drain current　　》82mΩ on-drain-source resistance　　》±30V gate-source voltage　　》4V to 6V gate-source threshold voltage range　　》100μA maximum zero gate voltage drain current　　》±100nA maximum gate-source leakage current　　》49A maximum source current　　》1.5V maximum source-drain voltage　　》1.0Ω typical gate resistance　　》6.5μC typical reverse recovery charge　　》34A typical peak reverse recovery current　　》Typical gate charge　　。65nC total　　。21nC source　　。30nC drain　　》7V typical gate plateau voltage　　》90W or 448W power dissipation　　》Typical capacitance　　。2940pF input　　。100pF output　　。Effective output　　.100pF energy related　　.650pF time related　　》Single pulse avalanche　　。2.8A current　　。208mJ energy　　》Typical time　　。38ns turn-on delay　　。33ns rise　　。91ns turn-off delay　　。19ns fall　　。380ns reverse recovery　　》-55°C to +150°C operating temperature range　　》TO-220AB-3, TO-220FM-3, and TO-247G-3 package options　　INNER CIRCUIT
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Release time：2023-09-25 15:58 reading：1981 Continue reading>>

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